• Journal of Radiation Protection and Research
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• v.38 no.3
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• pp.132-137
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• 2013

Cryogenic particle detectors have recently been adopted in radiation detection and measurement because of their high energy resolution. Many of these detectors have demonstrated energy resolutions better than the theoretical limit of semiconductor detectors. We report the development of alpha spectrometer using a micro-fabricated magnetic calorimeter coupled to a large-area particle absorber. A piece of gold foil of $2{\times}2{\times}0.05mm^3$ was glued to the paramagnetic temperature sensor made of sputtered Au:Er film to serve as an absorber for incident alpha particles. We performed experiments with 241Am source at cryogen free adiabatic demagnetization refrigerator (CF-ADR). A high energy resolution of 6.8 keV in FWHM was obtained for 5.5 MeV alpha particles.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.359-367
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• 1999

CsI(Li) single crystals doped with 0.02, 0.1, 0.2 and 0.3 mole% lithium as an activator were grown by Czochralski method. The lattice structure of grown CsI(Li) single crystal was bcc, its lattice constant was $4.568\;{\AA}$. The absorption edge of CsI(Li) single crystal was 245 nm, and the spectral range of luminescence was $300{\sim}600\;nm$, its maximum luminescence intensity appeared at 425 nm. The energy resolutions of CsI(Li) single crystal doped with 0.2 mole% lithium were 14.5% for $^{137}Cs$(662 keV), 11.4% for $^{54}Mn$(835 keV) and 17.7% and 7.9% for $^{22}Na$(511 keV and 1275 keV), respectively. The relation formula of $\gamma$-ray energy versus energy resolution was ln (FWHM%) = -0.893lnE + 8.456 and energy calibration formula was ${\log}E_r=1.455\;{\log}(ch.)-1.277$. The phosphorescence decay time of CsI(Li) crystal doped with 0.2 mole% lithium was 0.51 s at room temperature, and its time resolution measured by CFT(constant-fraction timing method) was 9.0 ns.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.18-24
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• 2019

This study was carried out to investigate the effect of milling of boron (B), which is one of raw materials of $MgB_2$, on the critical current density ($J_c$) of $MgB_2$. B powder used in this study is semi-amorphous B (Pavezyum, Turkey, 97% purity, 1 micron). The size of B powder was reduced by planetary milling using $ZrO_2$ balls (a diameter of 2 mm). The B powder and balls with a ratio of 1:20 were charged in a ceramic jar and then the jar was filled with toluene. The milling time was varied from 0 to 8 h. The milled B powders were mixed with Mg powder in the composition of (Mg+2B), and the powder mixtures were uniaxially pressed at 3 tons. The powder compacts were heat-treated at $700^{\circ}C$ for 1 h in flowing argon gas. Powder X-ray diffraction and FWHM (Full width at half maximum) were used to analyze the phase formation and crystallinity of $MgB_2$. The superconducting transition temperature ($T_c$) and $J_c$ of $MgB_2$ were measured using a magnetic property measurement system (MPMS). It was found that $B_2O_3$ was formed by B milling and the subsequent drying process, and the volume fraction of $B_2O_3$ increased as milling time increased. The $T_c$ of $MgB_2$ decreased with increasing milling time, which was explained in terms of the decreased volume fraction of $MgB_2$, the line broadening of $MgB_2$ peaks and the formation of $B_2O_3$. The $J_c$ at 5 K increased with increasing milling time. The $J_c$ increase is more remarkable at the magnetic field higher than 3 T. The $J_c$ at 5 K and 4 T was the highest as $4.37{\times}10^4A/cm^2$ when milling time was 2 h. The $J_c$ at 20 K also increased with increasing milling time. However, The $J_c$ of the samples with the prolonged milling for 6 and 8 h were lower than that of the non-milled sample.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2461-2465
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• 2013

This paper investigates the influence of hydrogen loading process on the radiation sensitivity of fiber Bragg gratings (FBG). We made the FBG inscribed in the same commercial Ge-doped fiber with different hydrogen loading periods. We measured the Bragg wavelength shift (BWS) of the FBG exposed to gamma-radiation up to a dose of 18 kGy, and evaluated the change of full width at half maximum (FWHM) and the FBG temperature sensitivity coefficient after irradiation. Varying hydrogen loading parameter led to BWS differences up to nearly a factor of two.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.56-60
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• 2018

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.443-448
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• 2010

In this work, the scintillation properties of CsI:Na crystal were investigated as radiation detection sensor. This scintillation material was grown by a 2-zone vertical Bridgman method. Under X-ray excitation the crystal shows a broad emission band between 280 nm and 690 nm wavelength range, peaking at 413 nm. Energy resolution for $^{137}Cs$ 662 keV $\gamma$-rays of the crystal was measured to be 6.9 %(FWHM). At room temperature, the crystal exhibits three exponential decay time components. The fast and major component of scintillation time profile of the crystal emission decays with a 457 ns time constant. Absolute light yield of the crystal was estimated to be 53,000 ph/MeV using LAAPD. The sample crystal shows proportionality of 30 % in the measured energy range from 31 to 1,333 keV. And the $\alpha/\beta$ ratio of the crystal was 0.14.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.12
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• pp.1804-1809
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• 2017

A data acquisition (DAQ) system based on oscilloscope was developed and evaluated for radiation detector. The dedicated LabVIEW program that perform the oscilloscope control and the data process was developed. Triggered events for each analog channel were acquired and the output signals were subsequently digitized and recorded for offline processing. Radiation pulse generation circuit was developed to evaluate the intrinsic characteristics of DAQ system. Energy linearity and energy resolution performances were assessed by voltage-peak channels and FWHM obtained from Gaussian fit, respectively. Radiation detector consists of LYSO and GAPD array. The 16 output signals were multiplexed by the RCD networks, and they were fed into the custom-made preamplifiers. Voltage-peak channels was linearly changed as a function of input voltage and the estimated coefficient of determination ($R^2$) was 0.999. No considerable changes in voltage resolution were observed. All 16 crystals were clearly identifiable on the resulting flood image and the mean energy resolution was ~15.1%. This study demonstrated that it is feasible to develop the DAQ system based on oscilloscope and LabVIEW program for radiation detector and the proposed approach offers opportunities to build simple DAQ system in various radiation measurement field.

• Journal of the Korea Society of Computer and Information
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• v.6 no.2
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• pp.8-13
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• 2001

We demonstrate a pulsed CO$_2$laser with long pulse duration of millisecond order in the low pressure less than 30 Torr. A new power supply for our laser system switches the voltage of AC power line(60㎐) directly. The power supply doesn't need elements such as a rectified bridge, energy-storage capacitors. and a current-limiting resistor in the discharge circuit. In order to control the laser output power, the pulse repetition rate is adjusted up to 60㎐ and the firing angle of SCR gate is varied from 30˚ to 150˚. A ZCS(Zero Crossing Switch) circuit and a PIC one-chip microprocessor are used to control the gate signal of SCR precisely. The maximum laser output is 23W at the total pressure of 18 Torr, the pulse repetition rate of 60㎐, and SCR gate firing angle of 90˚. In addition, the obtained laser pulse width is approximately 3㎳(FWHM)

• Journal of radiological science and technology
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• v.41 no.4
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• pp.321-327
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• 2018

The purpose of this study is to compare PET imaging performance with Fluorine-18 ($^{18}F$) and Gallium-68 ($^{68}Ga$) for influence of physical properties of PET tracer. Measurement were performed on a Siemens Biograph mCT64 PET/CT scanner using NEMA IEC body phantom and Flangeless Esser PET phantom containing filled with $^{18}F$ and $^{68}Ga$. Emission scan duration(ESD) was set to 1, 2, 3, 4 and 5min/bed for $^{68}Ga$ and 1min/bed for $^{18}F$. The PET image were evaluated in terms of contrast, spatial resolution. Under same condition, The percentage of contrast recovery measured in the phantom ranged from 16.88% to 72.56% for $^{68}Ga$ and from 27.51% to 74.43% for $^{18}F$ and The FWHM value to evaluate spatial resolution was 10.96 mm for $^{68}Ga$ and 9.19 mm for $^{18}F$. For this study, $^{18}F$ produces better image contrast and spatial resolution than $^{68}Ga$ due to higher positron yield and lower positron energy ($^{18}F$: 96.86%, 633.5 keV, $^{68}Ga$: 88.9%, 1899 keV), The physical properties of PET tracer effect on the PET image. $^{68}Ga$ image applying ESD of 3, 4, 5min/bed were showed similar to $^{18}F$ image with ESD of 1min/bed. This study suggests that increasing ESD for acquiring $^{68}Ga$ PET image seem to be similar to $^{18}F$ image.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.126.2-126.2
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• 2011

ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the substrate temperature. On the other hand, as seen in the FWHM decreased with increasing the substrate temperature. Since the FWHM of the (111) diffraction peak is inversely properties to the grain size of the film, then grain size of ZnS thin film increases with increasing the substrate temperature. The electrical resistivity and optical transmittance of the ZnS film as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at $400^{\circ}C$, the resistivity decreases to a minimum value of $2.1{\times}10^{-3}\;{\Omega}cm$ and the transmittance increases to a maximum value of 80% of the ZnS film.