A Study on Properites of PV Solar cell n-type ZnS Using RF Sputtering Method

RF스퍼터링을 이용한 태양전지용 n-type ZnS 특성연구

ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the substrate temperature. On the other hand, as seen in the FWHM decreased with increasing the substrate temperature. Since the FWHM of the (111) diffraction peak is inversely properties to the grain size of the film, then grain size of ZnS thin film increases with increasing the substrate temperature. The electrical resistivity and optical transmittance of the ZnS film as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at $400^{\circ}C$, the resistivity decreases to a minimum value of $2.1{\times}10^{-3}\;{\Omega}cm$ and the transmittance increases to a maximum value of 80% of the ZnS film.