• 대한금속재료학회지
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• 제49권10호
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• pp.797-804
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• 2011

In this study, the mechanisms of the three steps (the polymer deposition step, the polymer etching step and the Si etching step) that constitute the Bosch process were investigated. The effects of radicals and ions on each step were quantitatively analyzed by comparing the simulated aspect ratio dependency of the deposition or etch rate with the experimental results. In the polymer deposition step, fluorocarbon polymer is deposited by chemical reactions of $CF_x$ radicals, of which the reaction probability is 0.13. Although the polymer etching step and the Si etching step were conducted under the same conditions, the etching mechanisms of polymer and Si were found to be quite different. In the polymer etching step, both chemical etching and physical sputter-etching contribute to the polymer etching. Whereas, in the Si etching step, Si is chemically etched by F radicals, of which the reactivity is greatly increased by the bombardment of energetic ions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2011

Atmospheric-pressure plasmas are used in a variety of materials processes. The lifetime of most atmospheric-pressure plasma sources is limits by electrode erosion due to energetic ion bombardment. These drawbacks were solved recently by several microplasma sources based on microstrip structure, which are more efficient and less prone to perturbations than other microplasma sources. In this work, we propose microplasma sources based on strip line and microstrip line, developed for the generation of microplasmas even in atmospheric air and analyzes these systems with microwave field simulation via comparative study with two previous microwave sources (Microstrip Spit Ring Resonator (MSRR), Microstrip Structure Source (MSS)).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1504-1507
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• 2009

In this paper, the etching behavior of ZnO in $CF_4$ plasma mixed Ar was investigated. Previously, the etch rate in $CF_4$/Ar plasma was reported that it is slower than that in Cl containing plasma. But, plasma included Cl atom can produce the by-product such as $ZnCl_2$. In order to solve this film contamination, no Cl containing etching gas is required. We controlled the etching parameter such as source power, substrate bias power, and $CF_4$/Ar gas ratio to acquire the fast etch rate using a ICP etcher. We accomplished the etching rate of 144.85 nm/min with the substrate bias power of 200W. As the energetic fluorine atoms were bonded with Zinc atoms, the fluoride zinc crystal ($ZnF_2$) was observed by X-ray photoelectron spectroscopy (XPS).

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2012년도 제38회 춘계학술대회논문집
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• pp.342-349
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• 2012

고 에너지 물질 초음속 화염의 전파에 대한 gap의 효과를 이해하기 위하여 characteristic acoustic impedance theory와 수치해석이 적용되었다. 여러 개의 gap이 위치하고 있는 화약의 한 끝에 초음속 화염이 발생되도록 하여, 여러 gap에 전파되나가는 연속적인 화염에 대한 이해를 시도 하였다. 현재의 높은 차원의 다물질 해석은 SNU-Hydropack code에 포함되어 있는 복잡한 경계면 추적 알고리즘의 타당성에 대한 의미 있는 결과를 제시했다.

• 한국분말재료학회지
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• 제26권3호
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• pp.220-224
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• 2019

The aluminum (Al)/copper oxide (CuO) complex is known as the most promising material for thermite reactions, releasing a high heat and pressure through ignition or thermal heating. To improve the reaction rate and wettability for handling safety, nanosized primary particles are applied on Al/CuO composite for energetic materials in explosives or propellants. Herein, graphene oxide (GO) is adopted for the Al/CuO composites as the functional supporting materials, preventing a phase-separation between solvent and composites, leading to a significantly enhanced reactivity. The characterizations of Al/CuO decorated on GO(Al/CuO/GO) are performed through scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping analysis. Moreover, the functional bridging between Al/CuO and GO is suggested by identifying the chemical bonding with GO in X-ray photoelectron spectroscopy analysis. The reactivity of Al/CuO/GO composites is evaluated by comparing the maximum pressure and rate of the pressure increase of Al/CuO and Al/CuO/GO. The composites with a specific concentration of GO (10 wt%) demonstrate a well-dispersed mixture in hexane solution without phase separation.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.31.1-31.1
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• 2010

Various ZnO nanostructures were synthesized and ZnO nanostructure-based self-assembled transistors were fabricated. Compared to spindle and flower like nanostructure, the ZnO nanorod (NR) structure showed much stronger gate controllability, and greatly enhanced device performance, demonstrating that this structural variation leads to significant differences of the nanostructure network-based device performance. Also, patterned dry transfer-printing technique that can generate monolayer-like percolating networks of ZnO NRs has been developed. The method exploits the contact area difference between NR-NR and NR-substrate, rather than elaborate tailoring of surface chemistry or energetic. The devices prepared by the transferring method exhibited on/off current ratio, and mobility of ${\sim}2.7{\times}10^4$ and ${\sim}1.03\;cm^2/V{\cdot}s$, respectively. Also, they exhibited showing lower off-current and stronger gate controllability due to defined-channel between electrodes and monolayer-like network channel configuration. With multilayer stacks of nanostructures on stamp, the monolayer-like printing can be repeated many times, possibly on large area substrate, due to self-regulating printing characteristics. The method may enable high-performance macroelectronics with materials that have high aspect ratio.

• Macromolecular Research
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• 제15권7호
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• pp.640-645
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• 2007

The phase behavior of branched polycarbonate (BPC) blends with poly(ethylene terephthalate-co-1,4-dimethyl cyclohexane terephthalate) copolyesters (PECT), as well as their rheological properties, were assessed. Even though BPC blends with PECT prepared by solvent casting proved to be immiscible, BPC and PECT copolyesters containing 1,4-dimethyl cyclohexane (CHDM) from 32 to 80 mole% formed homogeneous mixtures upon heating. The homogenization temperatures of the blends decreased with increasing CHDM content in PECT. The interaction energies of the BPC-PECT pairs calculated from the phase boundary in accordance with the lattice-fluid theory were positive and also decreased with increasing CHDM content in PECT. It was shown that the phase homogenization of these blends occurs upon heating when the combinatorial entropy term, which is favorable for miscibility, overcomes unfavorable energetic terms at elevated temperatures. A novel product, which is not limited by the drawbacks of linear polycarbonate (PC) and evidences processability superior to that of the PC/PECT blends, can be developed via the blending of BPC and PECT.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• 디지털산업정보학회논문지
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• 제18권1호
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• pp.139-149
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• 2022

The study aims to understand the impact the consumption value changed by COVID-19 has on the purchasing behavior of industry foodservices dietitians and to provide baseline data in setting the marketing strategies for the food materials distribution companies in the future. The main survey was conducted for eight days from May 13th to 20th 2021 and 260 copies were collected and analyzed. Through the results of the study, the following conclusion elicited. First, consumption values that impact purchasing behaviors of industry foodservices dietitians are functional value and situational value. Second, for dietitians working at directly managed foodservice establishments, the higher the functional value of the food materials is, the higher the purchasing behavior. But such correlation was not found in the case of dietitians at consignment establishments. Third, compared to before and after COVID-19, the importance of functional value of food materials decreased, while the importance of situational value increased. Therefore, it is assumed that establishing marketing strategies differentiated by direct and consignment management will contribute to the energetic sales of the food material companies in the era of post COVID-19.

• Nuclear Engineering and Technology
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• 제55권4호
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• pp.1287-1299
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• 2023

A new Monte-Carlo-based computer program (RDS-BASIC) is developed to simulate the transport of energetic ions in pure matter. This computer program is utilizing an algorithm that uses detailed numerical solutions for the classical scattering integral for evaluating the outcomes of the binary collision processes. This approach is adopted by several prominent similar simulation programs and is known to provide results with higher accuracy compared to other approaches that use approximations to shorten the simulation time. Furthermore, RDS-BASIC simulation program contains special methods to reduce the displacement energy threshold of surface atoms. This implementation is found essential for accurate simulation results for sputtering yield in the case of very low energy ions irradiation (near sputtering energy threshold) and also successfully solve the problem of simultaneously obtaining an acceptable number of atomic displacements per incident ions. Results of our simulation for several irradiation systems are presented and compared with their respective TRIM (SRIM-2013) and the state-of-the-art SDTrimSP simulation results. Our sputtering simulation results were also compared with available experimental data. The simulation execution time for these different simulation programs has also been compared.