• Proceedings of the KSME Conference
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• 2007.05a
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• pp.441-445
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• 2007

In this paper we demonstrated the applications of OTFTs (organic thin film transistors) to flexible displays such as AM-EPD (active matrix electrophoretic display) and AM-OLED (active matrix organic light emitting diode), and also to integrated circuits. The OTFTs using pentacene semiconductor layer and PVP gate dielectric and Au S/D electrodes exhibited good performance for AM-EPD with the mobility of $0.59\;cm^{2}/V.sec,$ and with also good uniformity over 2.5" diagonal area. However, it is nor enough for AM-OLED requiring the mobility larger than $1\;cm^{2}/V.sec$ for large area displays. The integrated circuits also worked, producing the operating frequency of 1MHz. We need to develop a fabrication process to reduce parasitic capacitance for high frequency operation.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1112-1115
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• 2007

Optical thickness method using double interferometer showed dynamic variations of both mechanical and optical thicknesses. Packing density measured a thickness ratio of before and after pressed single film. Lower swelled thickness of emitting layer in a device and densely packed film had shown better lifetime.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1440-1442
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• 2007

In this work, we have modeled and fabricated microcavity-enhanced OLED using the 1-dimensional distributed Bragg reflector model (DBR). Results show that simulated spectrum intensity of microcavity OLED increased more than 30% compared to the conventional OLED, by use of DBR with $TiO_2$ and $SiO_2$. Spectral change of green and blue emission was expected to give the deeper color. The experimental design and characterization as well as the matching with simulated properties were performed for microcavity OLED for actual application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.961-963
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• 2002

Organic electroluminesencent device have been studied because of its easy fabrication and high brightness for plate panel display instead of cathode ray tube. There are some device structure for full color filter system can be applicable to the full color application if the blue light organic electroluminesencent device(OELD) is developed. In this study, we fabricated OELD of ITO/CuPc/PBD/LiF/Al using mixed of 500, 600, $700[{\AA}]$ by vacuum method as a emitting layer. We studied the voltage-current, voltage-luminance characteristics and blue light emission of OELD,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1026-1029
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• 2002

We report the electric properties of organic light emitting diodes (OLEDs) by controlling the carrier density according to the crystalline of copper(II) phthalocyanine(CuPc) and the irradiation light intensity. OLEDs were constructed with indium tin oxaide (ITO)/CuPc/triphenyl-diamin (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq3)/Al. The transport properties of OLEDs were changedby the heat-treatments of CuPc. The irradiation of red and blue light exciting CuPc, TPD and Alq3. And then we observed the carrier density of OLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.526-529
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• 2008

By combining tetraphenylethylene and anthracene, we synthesized 9,10-bis(4-(1,2,2-triphenylvinyl)phenyl) anthracene [BTPPA] and 1,2-di(4'-tert-butylphenyl)-1,2-bis(4'-(anthracene-9-yl)phenyl)ethene [BPBAPE]; both BTPPA and BPBAPE have similar band-gaps, however their PL spectra were shifted by about 30 nm with respect to each other. The fabricated multilayered non-doped OLED devices based on pure BTPPA or BPBAPE exhibited luminance efficiencies of 3.93 cd/A at 6.8 V and 10.33 cd/A at 8.1 V, respectively, at $10\;mA/cm^2$. As the BPBAPE content of the emitting layer increased, the luminance efficiency of the device increased; in addition, the CIE coordinates of the fabricated devices shifted gradually from deep-blue for pure BTPPA to sky-blue for pure BPBAPE.

• Journal of Information Display
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• v.9 no.2
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• pp.5-8
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• 2008

Bottom gate thin film transistors (TFTs) with microcrystalline and amorphous Si (a-Si) double active layers (DAL) were fabricated. Since the process of DAL TFTs can use that of conventional a-Si TFTs, these DAL TFT process has advantages, such as low cost, large substrate, and mass production capacity. In order to analyze the degradation characteristics in saturation region for driving TFTs of active matrix organic light emitting diode, three different dynamic stresses were applied to DAL TFTs and a-Si TFTs. The threshold voltage shift of DAL TFTs and a-Si TFTs during 10,000 second stress is 0.3V and 2V, respectively. DAL TFTs were more reliable than a-Si TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.970-972
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• 2006

The surface of ITO in OLEDs was treated with $HfO_x$ deposition process using an atomic layer chemical vapor deposition system. The treatment at room temperature for 5 cycles exhibited significantly improved electroluminescent characteristics compared to the OLEDs without any treatment, which is believed to be caused by the increased holes injection efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1059-1062
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• 2006

We report synthesis and properties of new phenothiazyl polymer derivatives, Poly(10-octyl-10Hphenothiazine-3,7-diyl)(POP), Poly(2',3',6',7'-tertrakis-octyloxy-9-spirobifluorene-2,7-diyl) (PTOSF), and their random copolymers, Poly(10-octylphenothiazine-co-2',3',6',7'-tertrakis-octyloxy-9-spirobifluorene) (POTOSF). PL emission of POP, PTOSF and POTOSF copolymer were found to be 480, 434 and 484nm, respectively. EL emission peak of double-layer EL device of POTOSF was at 494nm (bluish green).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.984-986
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• 2006

We report efficient inverted transparent blue OLEDs (ITOED) with an hole injection layer prepared by co-evaporation of $WO_3$ with NPB, which achieved a total current efficiency of 10.7 cd/A at $20mA/cm^2$ with light emits from both ITO bottom cathode and Au top anode in about 3:1 ratio.