• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.157-164
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• 2014

The accuracy of instantaneous passive emitter localization varies with sensing platforms and measurable parameters. Appropriate combination of instantaneous measurable parameters have more accurate localization performance than a single parameter based localization in general. Emitter localization is preferred to use a small number of receivers as possible for the efficiency of strategic management in the field of modern electronic warfare support. For this reason, we compare CRLB (Cramer-Rao lower bound) of two moving platform with various measurable parameters to search a appropriate choice of parameters for the better localization performance through the x-y axis CEP (circular error probable) derived form CLRB. In addition, we present the relation of the localization performance and accuracy of measurable parameters.

• Carbon letters
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• v.12 no.4
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• pp.207-217
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• 2011

We discuss the influence of few-walled carbon nanotubes (FWCNTs) treated with nitric acid and/or sulfuric acid on field emission characteristics. FWCNTs/tetraethyl orthosilicate (TEOS) thin film field emitters were fabricated by a spray method using FWCNTs/TEOS sol one-component solution onto indium tin oxide (ITO) glass. After thermal curing, they were found tightly adhered to the ITO glass, and after an activation process by a taping method, numerous FWCNTs were aligned preferentially in the vertical direction. Pristine FWCNT/TEOS-based field emitters revealed higher current density, lower turn-on field, and a higher field enhancement factor than the oxidized FWCNTs-based field emitters. However, the unstable dispersion of pristine FWCNT in TEOS/N,N-dimethylformamide solution was not applicable to the field emitter fabrication using a spray method. Although the field emitter of nitric acid-treated FWCNT showed slightly lower field emission characteristics, this could be improved by the introduction of metal nanoparticles or resistive layer coating. Thus, we can conclude that our spray method using nitric acid-treated FWCNT could be useful for fabricating a field emitter and offers several advantages compared to previously reported techniques such as chemical vapor deposition and screen printing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.823-829
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• 2004

In this paper, non-self-aligned SiGe HBTs with ${f}_\tau$ and${f}_max $above 50 GHz have been fabricated using an RPCVD(Reduced Pressure Chemical Vapor Deposition) system for wireless applications. In the proposed structure, in-situ boron doped selective epitaxial growth(BDSEG) and TiSi$_2$ were used for the base electrode to reduce base resistance and in-situ phosphorus doped polysilicon was used for the emitter electrode to reduce emitter resistance. SiGe base profiles and collector design methodology to increase ${f}_\tau$ and${f}_max $ are discussed in detail. Two SiGe HBTs with the collector-emitter breakdown voltages ${BV}_CEO$ of 3 V and 6 V were fabricated using SIC(selective ion-implanted collector) implantation. Fabricated SiGe HBTs have a current gain of 265 ∼ 285 and Early voltage of 102 ∼ 120 V, respectively. For the $1\times{8}_\mu{m}^2$ emitter, a SiGe HBT with ${BV}_CEO$= 6 V shows a cut-off frequency, ${f}_\tau$of 24.3 GHz and a maximum oscillation frequency, ${f}_max $of 47.6 GHz at $I_c$of 3.7 mA and$V_CE$ of 4 V. A SiGe HBT with ${BV}_CEO$ = 3 V shows ${f}_\tau$of 50.8 GHz and ${f}_max $ of 52.2 GHz at $I_c$ of 14.7 mA and $V_CE$ of 2 V.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.3
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• pp.31-36
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• 2017

In this paper, designed infrared (IR) emitter device for infrared scene projector (IRSP) which is used for evaluating the performance of IR sensor systems was simulated by using finite element analysis (FEA) tool and fabricated by using MEMS (Micro Electro-Mechanical System) technology. The performance of the fabricated IR emitter unit device was characterized in the vacuum chamber by using IR image microscope for MWIR($3{\sim}5{\mu}m$), which showed 423K apparent temperature (Tapp) and 22msec time constant (${\tau}$).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Korean Journal of Materials Research
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• v.24 no.7
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• pp.375-380
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• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

• Journal of Information Display
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• v.2 no.3
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• pp.78-85
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• 2001

The growth of carbon nanotubes(CNTs) in anodic aluminum oxide(AAO) template and their application to a field emitter are described. AAO templates were fabricated by anodizing bulk aluminum and sputtered thin Al film on Nb-coated Si wafers. After Co catalyst had been electrochemically deposited into the bottom of the pores in AAO template, CNTs were grown by pyrolyzing $C_2H_2$. Depending on the reaction conditions, CNTs grew up to or over the top of the pores in AAO template with different structures. The morphology and structure of CNTs were observed with a scanning electron microscope and a transmission electron microscope. The diameter of CNTs strongly depended on the size of the pores in AAO template and the growing conditions. The electron field emission measurement of the samples resulted in the turn-on field of 1.9-2.2 $V/{\mu}m$ and the field enhancement factor of 2450-5200. The observation of high field enhancement factors is explained in terms of low field screening effect.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.130-133
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• 2019

The Ag crystallite formed during the formation of the front electrode forms a contact between the metal of the electrode and the emitter of the cell. Contact between the electrode and emitter plays an important role in collecting electrons generated by the solar cell. Therefore, Ag crystallite formation is an important factor. In order for solar cells to have good characteristics, it is important to understand the factors influencing the Ag crystallite formation. Factors affecting the formation of Ag crystallites include Si emitter, morphology, Si defect and firing temperature. The influence of surface morphology on Ag crystallite formation was confirmed throughout this study. In the case of fine texturing, the Ag crystallites were formed at the pointed parts. The finer the texturing, the sharper areas and more Ag crystallites were formed. This was confirmed by SEM image and FF calculation.

• Journal of Sensor Science and Technology
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• v.25 no.4
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• pp.264-270
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• 2016

Self-powered neutron detector (SPND) is a sensor to monitor a neutron flux proportional to a reactor power of the nuclear power plants. Since an SPND is usually installed in the reactor core and does not require additional outside power, it generates electrons itself from interaction between neutrons and a neutron-sensitive material called an emitter, such as rhodium and vanadium. This paper presents the simulations of the depletion sensitivity evaluations based on MCNP models of rhodium and vanadium SPNDs and light water reactor fuel assembly. The evaluations include the detail geometries of the detectors and fuel assembly, and the modeling of rhodium and vanadium emitter depletion using MCNP and ORIGEN-S codes, and the realistic energy spectrum of beta rays using BETA-S code. The results of the simulations show that the lifetime of an SPND can be prolonged by using vanadium SPND than rhodium SPND. Also, the methods presented here can be used to analyze a life-time of those SPNDs using various emitter materials.