Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Measurement and Analysis of Temperature Dependence for Current-Voltage Characteristics of Homogeneous Emitter and Selective Emitter Crystalline Silicon Solar Cells

Homogeneous 에미터와 Selective 에미터 결정질 실리콘 태양전지의 온도에 따른 전류-전압 특성 변화 측정 및 분석

  • Nam, Yoon Chung (Department of Materials Science and Engineering, Korea University) ;
  • Park, Hyomin (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Ji Eun (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Soo Min (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Young Do (Department of Materials Science and Engineering, Korea University) ;
  • Park, Sungeun (Department of Materials Science and Engineering, Korea University) ;
  • Kang, Yoonmook (KU.KIST Green School, Graduated school of Energy and Environment, Korea University) ;
  • Lee, Hae-Seok (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Donghwan (Department of Materials Science and Engineering, Korea University)
  • 남윤정 (고려대학교 신소재공학과) ;
  • 박효민 (고려대학교 신소재공학과) ;
  • 이지은 (고려대학교 신소재공학과) ;
  • 김수민 (고려대학교 신소재공학과) ;
  • 김영도 (고려대학교 신소재공학과) ;
  • 박성은 (고려대학교 신소재공학과) ;
  • 강윤묵 (고려대학교 그린스쿨대학원 에너지환경정책기술학과) ;
  • 이해석 (고려대학교 신소재공학과) ;
  • 김동환 (고려대학교 신소재공학과)
  • Received : 2014.05.08
  • Accepted : 2014.06.25
  • Published : 2014.07.27
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Abstract

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

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References

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