• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.38-41
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• 2002

We have investigated current-voltage-luminance characteristics of organic light-emitting diodes based on TPD/Alq$_3$organics depending on the application of forward-backward bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the current-voltage characteristics were measured. We have observed that the current-voltage characteristics shows a reversible current maxima at low voltage, which is possibly not related to the emission from Alq$_3$. Current-voltage-luminance characteristics imply that the conduction luminance mechanism at low voltage is different from that of high voltage one.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.72-77
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• 2019

To study the characteristics of AC driven OLED, we fabricated the fluorescent OLEDs and analyzed the electroluminescence characteristics of OLEDs with AC negative voltage. The luminance and the current density of the OLED decreased, and the number and size of the dark spots increased in proportion to the duration time and level of the applied AC negative voltage. The current efficiency of the OLED was improved when high AC negative voltage was applied within a short time. When the AC negative voltage of 10 V was applied for 1 minute, the efficiency was improved by 12.4%. Also, the degradation of luminance and current efficiency due to the duration of light emission was improved in the case of OLED applied for 1 minute with 10 V AC negative voltage. These are expected as a result of the improvement of the leakage current characteristics by eliminating the short-circuit region formed by the defect of the OLED at the AC negative high voltage. As a result, the continuous application of AC negative voltage reduced the luminance and the current density of OLED, but the temporary application of AC negative voltage with the proper time and voltage could improve the efficiency and lifetime of OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.379-382
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• 2002

GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.27-34
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• 1995

The analysis of nonlinear equivalent circuit and the resonance characteristics of input current and output voltage were simulated, and their electrical properties are discussed in the transverse-type piezoelectric ceramic transformer. The nonlinear resonance characteristics of input current and output voltage showed by the thermal effect due to a higher driving current, the nonlinearity increased greatly as driving current increased. When load resistor was 100[M.ohm.], the nonlinear coefficient was -1.3. The nonlinear resonance curve of input current and output voltage for a variation of input voltage and load resistor agreed with the discussed theory. The output voltage increased nearly proportioned to input voltage when load resistors were below 50[M.ohm.], the voltage step-up ratio decreased when a load resistor was 100[M.ohm.] and their maximum value was 950.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.799-805
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• 2004

Two dimensional MEDICI simulator is used to study the characteristics of latch-up current of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics, latch-up current density, ON-voltage drop and electrical property with the variations of p-base impurity concentrations. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have the better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer p-base structure under the floating $N^+$ emitter indicates to have the better characteristics of latch-up current and breakover voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.130-132
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• 2001

We have investigated current-voltage (I-V) characteristics of organic light-emitting diodes based on $TPD/Alq_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from $Alq_3$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.693-695
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• 2003

In this paper, we have investigated temperature-dependent characteristics of current-voltage for double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated the temperature-dependent characteristics of current-voltage and drain voltage is changed from 0V to 5.0V at $V_{mg}$ =1.5V and $V_{sg}$ =3.0V. We have obtained a very good characteristics of current-voltage for 77K. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.130-132
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• 2001

We have investigated current-voltage(I-V) characteristics of organic light-emitting diodes based on TPD/Alq$_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from Alq$_3$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1648-1653
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• 2006

In this paper, transport characteristics have been investigated using analytical current-voltage model for double gate MOSFET(DGMOSFET). Scaling down to 100nm of gate length for MOSFET can bring about various problems such as a threshold voltage roll-off and increasing off current by tunneling since thickness of oxide is down by 1.fnm and doping concentration is increased. A current-voltage characteristics have been calculated according to changing of channel length,using analytical current-voltage relation. The analytical model has been verified by calculating I-V relation according to changing of oxide thickness and channel thickness as well as channel length. A current-voltage characteristics also have been compared and analyzed for operating temperature. When gate voltage is 2V, it is shown that a current-voltage characteristic in 77K is superior to in room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.40-46
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• 2019

To study the frequency response characteristics of alternating-current-driven organic light-emitting diodes (OLEDs), we fabricated blue-fluorescent OLEDs and analyzed their electroluminescent characteristics according to the alternating current voltage and frequency. The luminance-frequency characteristics of alternating-current-driven OLED was similar to that of a low-pass filter, and the luminance of high-voltage OLED decreased at higher frequency than low-voltage OLED. The luminance characteristics of the OLED according to the frequency is due to the capacitive reactance in the OLED, generated during the alternating current driving. The frequency response characteristics of the OLED according to the voltage is due to the decrease in internal resistance of the organic layer. In addition, the negative voltage component of the alternating current did not affect the frequency response of the OLED. Therefore, the electroluminescent characteristics of OLED with an alternating current power of 60 Hz are not influenced by the frequency.