• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.6 no.9
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• pp.2073-2085
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• 2012

Recently, the International Telecommunication Union allocated the 470-862 MHz band to the digital broadcasting (DB) service. Moreover, the 790-862 MHz sub-band will be allocated to the next-generation mobile system, known as the International Mobile Telecommunication - Advanced (IMT-A), and to the DB on a co-primary basis in the year 2015. Currently, two candidate technologies are available to represent the IMT-A system; the Mobile WiMAX and Long Term Evolution - Advanced (LTE-A). One of the main criteria of the IMT-A candidate is to not cause additional interference to the primary service (i.e., DB). In this paper, we address the spectrum sharing issue between the IMT-A candidates and the DB service. More precisely, we investigate the interference effect between the DB service and the mobile network, which could be either LTE-A or WiMAX. Our study proposes a spectrum sharing model to take into account the impact of interference and evaluates the spectrum sharing requirements such as frequency separation and separation distance. This model considers three spectrum sharing scenarios: co-channel, zero guard band, and adjacent channel. A statistical analysis is performed, by considering the interferer spectrum emission mask and victim receiver blocking techniques. The interference-to-noise ratio is used as an essential spectrum sharing criterion between the systems. The model considers the random distribution of the users, antenna heights, and the bandwidth effect as well as the deployment environment in order to achieve spectrum sharing. The results show that LTE-A is preferable to WiMAX in terms of having less interference impact on DB; this can eventually allow the operation of both services without performance degradation and thus will lead to efficient utilization of the radio spectrum.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.9
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• pp.1864-1869
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• 2012

We make an interference analysis to obtain a critical ctiteria for coexisting availability of WLAN and WiBro between adjacent channels can be used in TVWS(TV White Space). To meet this analysis, we set the various transmission parameters including the emission and blocking mask, antenna height and gain, transmission power and bandwidth, channel model etc. And, based on these parameters, we analyze on performances according to a variation of guard band, a number of service user and allowable transmit power of the user operating in the adjacent channels. In this paper, we consider a urban environment and apply a Extended Hata-SRD for WLAN and an interference link and Extended Hata model for WiBro, respectively. With these results, we can see how each system can be shared in an adjacent channel.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.797-798
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• 2005

We report a novel structure for a full-color AMOLED (Active Matrix Organic Light Emitting Diode) eliminating the patterning process of a blue emitting layer. The patterning of the three primary colors, RGB, is a key technology in the OLED fabrication process. Conventional full color AMOLED containing RGB layers includes the three opportunities of the defects to make an accurate position and fine resolution using various technologies such as fine metal mask, ink-jet printing and laser-induced transfer system. We can skip the blue patterning step by simply stacking the blue layer as a common layer to the whole active area after pixelizing two primary colors, RG, in the conventional small molecular OLED structure. The red and green pixel showed equivalent performances without any contribution of the blue emission.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.10
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• pp.851-860
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• 2013

To overcome a scarcity of radio resources to mobile broadband service, the usage of TV white space gains much attraction around the world. This paper carries out an interference analysis either by performing realistic experiments or by executing statistical Monte-Carlo simulation to exploit interference probability. The results obtained from experiments are compared to those from simulations in order to clarify the coexistence of utilization of TV band devices (TVBD) in indoor circumstances. Along the execution of our experiment in the presence of DTV receiver, we apply to a variety of transmission parameters proposed in FCC for TVBD. According to experimental and simulation works, the allowable transmission powers of TVBD systems are exploited for the plausible which are coexist on the first as well as the second adjacent frequency bands. Throughout results, it can conclude that TVBD systems can be coexisted via achieving proper transmission powers depending on the locations of themselves without showing harmful interference to DTV reception.

• Journal of Science Education
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• v.46 no.3
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• pp.223-236
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• 2022

The purpose of this study is to investigate pre-service elementary teachers' awareness on the sources of microplastics. The participants were 75 male and 91 female undergraduates. A 15-item survey questionnaire was developed based on prior researches regarding microplastics emission sources and were modified through expert review and preliminary research. The survey results show that over 80% of the respondents had heard of microplastics before through news, internet, TV, etc. However, they tended not to be aware that things such as lab coats, wet tissue, dust protective mask, or paper cup were made of microplastics-causing substances. For the questions on the expected situation of microplastics contamination, the frequency of their choices were relatively low in 'Tires of cars running are worn out' and 'The gum stuck to the floor becomes smaller.' These results show that many of them were not aware that synthetic fiber or synthetic rubber was one of the microplastics emission sources. Gender differences were found in the attitudes toward microplastics problems. Female students are more interested in the issues and are more willing to participate in the solution, and recognize the need for more education on microplastics. The implications and future directions for science education were discussed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.671-680
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• 2005

The CFL linearisation chip which is one of key devices in ultra-narrowband mobile radio transmitter using CQPSK digital modulation method is designed and implemented with $0.35{\mu}m$ CMOS technology. The reduced size and low cost of transmitter are available by the use of direct-conversion and CFL ASIC chip, which improve the power effi챠ency and linearity of transmitting path. In addition, low power operation is possible through CMOS technology The performance test results of transmitter show -25 dBc improvement of IMD level at the 3 kHz frequency offset and then satisfy FCC 47 CFR 90.210 E emission mask in the operation of CFL ASIC chip. At that time, the transmitting power is about PEP(Peak-to-Envelope Power) 5 W. The main parameters to improve the transmitting characteristic and to compensate the distortion in feed back loop such as DC-offset, loop gain and phase value are interfaced with notebook PC to be controlled with S/W.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.