• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.51-53
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• 2005

$Zn_{1-x}Cd_xO$ thin films were grown on (0001) sapphire substrates by pulsed laser deposition. The energy bandgap of $Zn_{1-x}Cd_xO$ films decreases withincreasing Cd content. An increase of Cd content also leads to the emission broadening and degraded crystallinity. The absorption edge and ultraviolet emission peak shift to lower energy from 3.357 eV to 3.295 eV and 3.338 eV to 3.157 eV, respectively, with increasing Cd content from 0.3% to 3%. The Stokes' shift between the absorption and emission indicates the increase of localization of exciton with Cd content.

• Journal of Information Display
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• 제7권1호
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• pp.1-6
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• 2006

A 10" carbon nanotube field emission display device was fabricated with a novel structure with a hopping electron spacer (HES) by screen printing technique. HES plays a role of preventing the broadening of electron beams emitted from carbon nanotubes without electrical discharge during operation. The structure of the novel tetrode is composed of carbon nanotube emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top side of a HES, and an anode. HES contains funnel-shaped holes of which the inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes. They hop along the hole surface to the top extracting electrode. In this study the effects of the addition of HES on emission characteristics of field emission display were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the field emission display panel as a post-treatment.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• 분석과학
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• 제26권4호
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• pp.235-244
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• 2013

할로겐족 원소들의 강한 원자 방출선들은 진공자외선 영역에 존재하여, 공기 중에서 레이저 펄스를 시료에 집속하여 플라즈마 방출 스펙트럼을 얻어 원소 분석을 수행하기 매우 어렵다. 또한 근적외선 영역에 할로겐족 원소들의 들뜬 전자 상태들 사이의 전이에 의한 원자 방출선들이 존재하는데, 이들은 스타크 효과에 의한 선폭 넓어짐 현상이 매우 커서, 공기 중에서 원소 분석에 충분한 신호 대 잡음비를 얻기 어렵다. 헬륨 가스 플로우를 이용하여 근적외선 영역의 할로겐족 원소들의 원자 방출선들은 레이저유도 플라즈마로부터 관측하였다. 특히, 804.374 nm와 905.833 nm의 아이오딘 원자 방출선들은 레이저유도 플라즈마에서 처음으로 관찰된 것이다. 헬륨 분위기에서 스타크 효과에 의한 선폭 넓어짐 현상과 연속 배경복사의 세기는 현저히 억제되었다. 헬륨 가스 플로우의 유량에 따른 원자 방출선의 세기, 플라즈마 온도, 전자 밀도의 변화를 조사하였다. 이 방법을 이용하여 고무의 난연제 성분에 포함된 염소와 불소를 레이저유도 플라즈마 분광법을 이용하여 검출하였다. 마지막으로 레이저유도 플라즈마 분광법을 이용하여 할로젠 원소들을 검출하는데 헬륨 가스 소모량을 줄일 수 있는 가스 펄스 젯 장치를 제안한다.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.40-44
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• 2017

The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

• Biomedical Engineering Letters
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• 제8권4호
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• pp.383-392
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• 2018

For prompt gamma ray imaging for biomedical applications and environmental radiation monitoring, we propose herein a multiple-scattering Compton camera (MSCC). MSCC consists of three or more semiconductor layers with good energy resolution, and has potential for simultaneous detection and differentiation of multiple radio-isotopes based on the measured energies, as well as three-dimensional (3D) imaging of the radio-isotope distribution. In this study, we developed an analytic simulator and a 3D image generator for a MSCC, including the physical models of the radiation source emission and detection processes that can be utilized for geometry and performance prediction prior to the construction of a real system. The analytic simulator for a MSCC records coincidence detections of successive interactions in multiple detector layers. In the successive interaction processes, the emission direction of the incident gamma ray, the scattering angle, and the changed traveling path after the Compton scattering interaction in each detector, were determined by a conical surface uniform random number generator (RNG), and by a Klein-Nishina RNG. The 3D image generator has two functions: the recovery of the initial source energy spectrum and the 3D spatial distribution of the source. We evaluated the analytic simulator and image generator with two different energetic point radiation sources (Cs-137 and Co-60) and with an MSCC comprising three detector layers. The recovered initial energies of the incident radiations were well differentiated from the generated MSCC events. Correspondingly, we could obtain a multi-tracer image that combined the two differentiated images. The developed analytic simulator in this study emulated the randomness of the detection process of a multiple-scattering Compton camera, including the inherent degradation factors of the detectors, such as the limited spatial and energy resolutions. The Doppler-broadening effect owing to the momentum distribution of electrons in Compton scattering was not considered in the detection process because most interested isotopes for biomedical and environmental applications have high energies that are less sensitive to Doppler broadening. The analytic simulator and image generator for MSCC can be utilized to determine the optimal geometrical parameters, such as the distances between detectors and detector size, thus affecting the imaging performance of the Compton camera prior to the development of a real system.

• 천문학회지
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• 제33권1호
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• pp.57-73
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• 2000

We have done a spectroscopic study of the solar transition region using high resolution UV & EUV data obtained by SUMER(Solar Ultraviolet Measurements of Emitted Radiation) on board SOHO(Solar and Heliospheric Observatory). Optically thin and conspicuous emission lines observed at the solar limb are carefully selected to acquire average values of physical parameters for the quiet region as a function of radial distance. Our main results found from the present study can be summarized as follows. 1) Nonthermal velocities estimated from various UV lines do not decrease with height at least within one total line intensity scale height above the limb. 2) Nonthermal velocity distribution with temperature is very similar to that of the disk center, in the sense that its peak is located around $2{\times}10^5 K$, but the value is systematically larger than that of the disk. 3) It is found that nonthermal velocity is inversely proportional. to quadratic root of electron density up to about 10 arc seconds above the limb, i.e. ${\xi}\~N_e^{-1/4}$, implying that the observed nonthermal broadening can be attributed to Alfven waves passing through the medium. 41 Electron density estimated from the O V 629/760 line ratio is found to range from about $1{\times}10^{10}cm^{-3}$ to $2{\times} 10^{12}cm^{-3}$ in the transition region.

• Journal of Astronomy and Space Sciences
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• 제36권3호
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• pp.115-119
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• 2019

This paper is a part of the series on positron annihilation spectroscopy of two-phase diffuse gas-and-dust aggregates, such as interstellar medium and the young remnants of type II supernovae. The results obtained from prior studies were applied here to detect the relationship between the processes of the annihilation of the K-shell electrons and incident positrons, and the effects of these processes on the optical spectra of their respective atoms. Particular attention was paid to the Doppler broadening of their optical lines. The relationship between the atomic mass of the elements and the Doppler broadening, ${\Delta}{\lambda}_D$ (${\AA}$), of their emission lines as produced in these processes was established. This relationship is also illustrated for isotope sets of light elements, namely $^3_2He$, $^6_3Li$, $^7_3Be$, $^{10}_5B$ and $^{11}_5B$. A direct correlation between the ${\gamma}-line$ luminosity ( $E_{\gamma}=1.022MeV$) and ${\Delta}{\lambda}_D$ (${\AA}$) was proved virtually. Qualitative estimates of the structure of such lines depending on the positron velocity distribution function, f(E), were made. The results are presented in tabular form and can be used to set up the objectives of further studies on active galactic nuclei and young remnants of type II supernovae.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.