• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.5
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• pp.70-75
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• 2007

A dual-frequency dual-polarization (DFDP) antenna with high isolation between two ports by embedding $2{\times}1$ mushroom-like electromagnetic bandgap (EBG) cells is proposed. The equivalent circuit of a suspended microstrip line over $2{\times}1$ EBG cells is introduced. The numerical analysis from the equivalent circuit and measured results show that the microstrip line with embedded EBG cells has a distinctive and sharp rejection band and provides near 0 dB insertion loss outside the rejection band. By embedding the EBG cells under feedlines of a conventional DFDP antenna, the isolation between two ports of the antenna is enhanced more than 20 dB, as compared to that of a conventional DFDP antenna. The proposed DFDP antenna is fabricated and measured. The simulated and measured results show a good agreement. The measured polarization purity and gain of the antenna are 25 dB and 5.77 dBi at lower band, and 35 dB and 7.13 dBi at higher band, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.30-30
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• 2007

현재 다양한 종류의 RF 통신 제품이 시장에 등장하면서 제품의 경쟁력 확보에 있어 소형화 정도가 중요한 이슈가 되고 있다. Passive Device는 RF Circuit을 제작할 때 많은 면적을 차지하고 있으며 이를 감소시키기 위해 여러 연구가 진행되고 있다. 가장 효과적인 방법으로 반도체 집적기술로 크기를 줄이는 방법이 있으나, 공정이 비싸고 제작 시간이 오래 걸려 제품개발 시간과 개발비용이 상승하게 된다. 반면에 SoP-L 공정은 PCB 제작에 이용되는 일반적인 재료와 공정을 사용하므로 개발 비용과 시간을 줄일 수 있다. SoP-L의 또 하나 장점은 다종 재료를 다층으로 구성할 수 있다는 점이다. 최근 chip-type의 Device를 PCB 기판 안에 내장하는 방법의 RF Circuit 소형화 연구가 많이 진행되고 있다. 본 연구에서는 SoP-L 공정으로 chip-type 수동소자를 PCB 기판 내에 함몰하여 수동소자회로를 구현, 분석하여 보았다. 수동소자회로는 880 MHz~960 MHz(GSM) 영역과 1.71 GHz~1.88 GHz(DCS) 영역을 나누는 Diplexer를 구성하였다. 1005 size의 chip 6개로 구현한 Diplexer를 표면실장과 함몰공정으로 제작하고 Network Analyzer로 측정하여 비교하였다. chip 표면실장으로 구현된 Diplexer는 GSM에서 최대 0.86 dB의 loss, DCS에서 최대 0.68 dB의 loss가 나타났다. 표면실장과 비교하였을 때 함몰공정의 Diplexer는 GSM 대역에서 약 0.5 dB의 추가 loss가 나타났으며 목표대역에서 0.6 GHz정도 내려갔다. 이 결과를 바탕으로 두 공정 간 차이점을 확인하고, 함몰공정으로 chip-type 수동소자를 사용하였을 때 고려해야 할 점을 분석하였다. 이를 바탕으로 SoP-L 함몰공정의 안정성을 높여서 이것을 이용한 회로의 소형화에 적용이 가능할 것으로 기대한다. 특히 능동소자의 DC Power Control에서 고용량의 수동소자를 이용할 때 집적도를 높일 수 있을 것이다.

• Journal of Internet Computing and Services
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• v.25 no.1
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• pp.29-37
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• 2024

In this paper, we propose an efficient image processing system to detect and track the movement of specific objects such as patients. The proposed system extracts the outline area of an object from a binarized difference image by applying a thinning algorithm that enables more precise detection compared to previous algorithms and is advantageous for mixed-mode design. The binarization and thinning steps, which require a lot of computation, are designed based on RTL (Register Transfer Level) and replaced with optimized hardware blocks through logic circuit synthesis. The designed binarization and thinning block was synthesized into a logic circuit using the standard 180n CMOS library and its operation was verified through simulation. To compare software-based performance, performance analysis of binary and thinning operations was also performed by applying sample images with 640 × 360 resolution in a 32-bit FPGA embedded system environment. As a result of verification, it was confirmed that the mixed-mode design can improve the processing speed by 93.8% in the binary and thinning stages compared to the previous software-only processing speed. The proposed mixed-mode system for object recognition is expected to be able to efficiently monitor patient movements even in an edge computing environment where artificial intelligence networks are not applied.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.541-546
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• 2010

The push-push DRO(dielectric resonator oscillator) using a multi-layer structure of LTCC(low temperature co-fired ceramic) fabrication is designed. After the single DRO of series feedback type in the center frequency of 8GHz is designed, the push-push DRO in the center frequency of 16GHz including the Wilkinson power combiner is designed. The bias circuit affecting the size of oscillator are embedded in the intermediate layer of the LTCC multi-layer substrate. As a result, the large reduction in the size of VCO is obtained compared to the general oscillator on the single layer substrate. Experimental results show that the fundamental and third harmonics suppression are above 15dBc and 25dBc, respectively, and phase noise characteristics of the push-push DRO presents performance of -102dBc/Hz@100KHz and -128dBc/Hz@1MHz offset frequencies from carrier.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.198-201
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• 2012

This is a study about a platform realization measuring the extent of reaction in nerve, as giving a electrical impulse on a nerve pulp regulating a function of muscle, about a measurement of nerve reaction in the amount of current, the lasting time of current, and the position of electrode from a electrical impuls. The position of an electrode in a electrical nerve impuls have nothing to do with all nerves from exercise to all things. There is the Single Twitch Stimulation, Train-of-four, and Double Burst Stimulation in the form of nerve stimulation. This report is needed for selecting MCU of low electric power for a base in embedded system and measuring the extent of reaction after making a sensor interface to know sensitivity of measuring sensor in basic reaction of nerve impuls. The platform is realized to select a high efficiency AD Convertor for raising accuracy in measured data. As the platform in this report was developed for a medical appliances, it was designed to consider user safety in electric power Isolation when making electric power circuit.

• Applied Chemistry for Engineering
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• v.9 no.6
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• pp.907-913
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• 1998

Corrosion behavior of steel reinforcements embedded in concrete containing various chloride ion concentrations was investigated by an electrochemical impedance spectroscopy(EIS). Chloride ions were introduced into the concrete by dissolving the NaCl and $CaCl_2$ in the water with a given weight of cement. Based on the impedance parameters measured by EIS, more complete equivalent circuit, a schematic physical model, and the mechanism of concrete reinforcement corrosion were suggested. By the implement of experimental impedance parameters obtained from the model with corresponding CNLS-fitting data, the corrosion rate of steel reinforcement with chloride ions could be predicted.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.576-580
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• 2009

$BaTiO_3$/epoxy composites have been widely investigated as promising materials for embedded capacitors in printed circuit boards. It is generally known that the dielectric constant (K) of the $BaTiO_3$/epoxy composites increases with improvement of the dispersion of $BaTiO_3$ particles in the epoxy matrix that comes from adding surfactant. The influences of surfactant addition on the dielectric properties of the $BaTiO_3$/epoxy composites are reported in the present study. The dielectric constant of the $BaTiO_3$/epoxy composites is not significantly affected by the surfactant addition. However, the temperature coefficient of capacitance increases and the peel strength decreases as the amount of added surfactant increases. The influences of surfactant addition on the dielectric properties of the neat epoxy are also very similar to those of the $BaTiO_3$/epoxy composites. The residual surfactant in the $BaTiO_3$/epoxy composites affects the temperature coefficient of capacitance and the peel strength of the epoxy matrix, which in turn affects the temperature coefficient of capacitance and the peel strength of the $BaTiO_3$/epoxy composites.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.135-140
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• 2009

This paper discusses how to change the electromagnetic waves' property in the cut-off causing discontinuity existing in the guiding structure of the RF passive component by using the metamaterial and elaborates on its principle. Particularly, we find and explain, from the viewpoint of electromagnetics and circuit theories, the so-called tunneling condition that when the segment with an extremely narrow cross-section leading to blockage in the parallel-plate waveguide is given the ENZ(Epsilon Near Zero) for its filling material, the wave starts to propagate through the segment. The analysis method as a transmission-line theory taking the discontinuity and material change into consideration is shown valid through the comparison with other methods for analyzing parallel-plate waveguides, and provides the illustration of the S-parameters and impedance describing the characteristics of the tunneling.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.214-220
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• 2018

We report on the fabrication and photoelectrochemical(PEC) properties of a $Cu_2O$ thin film/ZnO nanorod array oxide p-n heterojunction structure with ZnO nanorods embedded in $Cu_2O$ thin film as an efficient photoelectrode for solar-driven water splitting. A vertically oriented n-type ZnO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film was directly electrodeposited onto the vertically oriented ZnO nanorods array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were characterized using X-ray diffraction and scanning electron microscopy as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/ZnO$ p-n heterojunction photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/ZnO$ photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.77mA/cm^2$ at 0.5 V vs $Hg/HgCl_2$ in a $1mM\;Na_2SO_4$ electrolyte, revealing an effective operation of the oxide heterostructure. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs $Hg/HgCl_2$, which made the device self-powered. The observed PEC performance was attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential, including the light absorption and separation processes of photoinduced charge carriers.