• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.393-399
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• 2018

An electrostatic boundary-value problem of a dielectric-wedge-backed, double-slotted conducting wedge is investigated to analyze an asymmetric coplanar waveguide with an infinite dielectric thickness using the Mellin transform and a mode-matching method. Our theoretical solution based on eigenfunction expansion and residue calculus is a rigorous and fast-convergent series form. Numerical computations are conducted to evaluate the potential field, capacitance, and characteristic impedance for various structures of the asymmetric coplanar waveguide. The computed results show good agreement with the simulated results.

• Smart Structures and Systems
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• v.14 no.3
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• pp.397-418
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• 2014

In this paper, a simple two-step method for structural vibration-based health monitoring for beam-like structures have been extended to plate-like structures with though-thickness cracks. Crack locations and severities of plate-like structures are detected using a hybrid approach. The interval wavelet transform is employed to extract crack singularity locations from mode shape and support vector regression (SVR) is applied to predict crack serviettes form crack severity detection database (the relationship of natural frequencies and crack serviettes) using several natural frequencies as inputs. Of particular interest is the natural frequencies estimation for cracked plate-like structures using Rayleigh quotient. Only the natural frequencies and mode shapes of intact structures are needed to calculate the natural frequencies of cracked plate-like structures using a simple formula. The crack severity detection database can be easily obtained with this formula. The hybrid method is investigated using numerical simulation and its validity of the usage of interval wavelet transform and SVR are addressed.

• Applied Science and Convergence Technology
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• v.25 no.2
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• pp.36-41
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• 2016

Similarity and diversity of various quantum ring structures are investigated by classifying energy dispersions of three different structures: an electrostatic quantum ring, a magnetic quantum ring, and a magnetic-electric quantum ring. The wave functions and the eigenenergies of a single electron in the quantum ring structures are calculated by solving the Schrdinger equation without any electron-electron interaction. Magnetoconductance is studied by calculating a two-terminal conductance while taking into account the backscattering via the resonance through the states of the quantum rings at the center of a quasi-one dimensional conductor. It is found that the energy spectra for the various quantum ring structures are sensitive to additional electrostatic potentials as well as to the effects of a nonuniform magnetic field. There are also characteristics of similarity and diversity in the energy dispersions and in the single-channel magnetoconductance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.33-33
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• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• Steel and Composite Structures
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• v.19 no.1
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• pp.191-208
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• 2015

The sensitivity-based finite element model updating method has received increasing attention in damage detection of structures based on measured modal parameters. Finding an optimization technique with high efficiency and fast convergence is one of the key issues for model updating-based damage detection. A new simple and computationally efficient optimization algorithm is proposed and applied to damage detection by using finite element model updating. The proposed method combines the Gauss-Newton method with region truncation of each iterative step, in which not only the constraints are introduced instead of penalty functions, but also the searching steps are restricted in a controlled region. The developed algorithm is illustrated by a numerically simulated 25-bar truss structure, and the results have been compared and verified with those obtained from the trust region method. In order to investigate the reliability of the proposed method in damage detection of structures, the influence of the uncertainties coming from measured modal parameters on the statistical characteristics of detection result is investigated by Monte-Carlo simulation, and the probability of damage detection is estimated using the probabilistic method.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.8
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• pp.841-846
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• 2014

FBG sensors are mainly used to measure deformation of structures such as tunnels, bridges and ships. In this paper, an interrogator of FBG sensors is developed and implemented to measure the status of structures. A developed interrogator includes CAN wired and Zigbee wireless communication for remote monitoring. Strain of structure is measured using shift of wavelength of reflected light from FBG sensor. A digital signal controller is used to process signals of a FBG sensor and transmit data for remote monitoring. As a result of experiment, developed interrogator is effective to measure deformation of structures.

• Journal of the Ergonomics Society of Korea
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• v.15 no.2
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• pp.157-163
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• 1996

A single line display menu (SDM) is widely used for the user interface of many electronic consumer products, and the designers need useful guidelines applicable to the SDM. In many studies on menus, major focus has been placed on the optimal menu structure, but only a few standard menu structures, such as $64^{1},8^{2},4^{3}$,and $2^{6}$ are usually tested for optimality. In many cases, however, ill defined or asymmetric structures are suggested as design alternatives. To determine the optimal menu structure, user performance should be obtained in terms of quantitative measures. Hence, a model is needed to provide a predicted value of user performance for a given menu structure. Altough several models have been proposed for ordinary menus, none is available for the SDM yet. To solve this problem a performance model was developed in this study using the neural network approach. This model is capable of providing quantitative measures of human performance for any menu structures without conducting additional experiments, which will save much time and reduce the design cost.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.859-863
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• 2007

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.149-154
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• 2014

A new CMOS analog design methodology using an independently optimized self-cascode (SC) is proposed. This idea is based on the concept of the dual-workfunction-gate MOSFETs, which are equivalent to SC structures. The channel length of the source-side MOSFET is optimized, to give higher transconductance ($g_m$) and output resistance ($r_{out}$). The highest $g_m$ and $r_{out}$ of the SC structures are obtained by independently optimizing the channel length ratio of the SC MOSFETs, which is a critical design parameter. An operational amplifier (OPAMP) with the proposed design methodology using a standard digital $0.18-{\mu}m$ CMOS technology was designed and fabricated, to provide better performance. Independently $g_m$ and $r_{out}$ optimized SC MOSFETs were used in the differential input and output stages, respectively. The measured DC gain of the fabricated OPAMP with the proposed design methodology was approximately 18 dB higher, than that of the conventional OPAMP.