• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.4
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• pp.499-508
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• 2014

In this paper, we implemented a LED sensitivity illumination system, being driven in response to changes in the biological signals of GSR and PPG signal. After measuring biological signals of a human body from GSR and PPG sensor modules, MCU decided the state of relaxation or arousal of the subject, being based on the wake relaxation identifying map proposed in this paper. A developed LED sensitivity illumination system makes the subject to reach a normal state by giving a change of the LED illumination color, corresponding to a state of the subject.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.340-344
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• 2012

Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.620-623
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• 2001

The peculiarities of using Self-propagating High-temperature Synthesis (SHS) and solid state phase synthesis for production of high temperature superconductor materials are discussed. Oxide superconductors with general formula $ReBa_2$$Cu_3$$O_{7-x}$ (Re= Y, Yb, Sm, Nd) have been made with using barium oxide initial powder instead of traditional barium carbonate. X-ray powder diffraction showed a single phase orthorhombic perovskite structure was produced in all reactions. Phenomena observed during the grinding of the reactant mixture are presented. Mechano-chemical activation - as a pretreatment of the reactant mixture - strongly influences the kinetic parameters, the reaction mechanism, and the composition and structure of the final product.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.450-454
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• 1996

Maxwell-Displacement-Current(MDC) measuring technique has been applied to the study of monolayers of Dilauroylphosphatidylcholine (L-.alpha.-DLPC) and Dimyristoylphosphatidylcholine (L-.alpha.-DMPC). The displacement current was generated from monolayers on a water surface by monolayer compression. Displacement current was generated when the area per molecule was about 250.angs.$^{2}$, 280.angs.$^{2}$. Displacement current was generated in the gas state, gas/liquid state, and liquid state in the course of monolayer compression. The orientational change of molecules in monolayers was discussed on the basis of the MDCs obtained. Finally, we measured differential thermal analysis of sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.48-51
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• 1991

Short channel Nonvolatile EEPROM memory devices were fabricated to CMOS 1M bit design rule, and reviews the characteristics and applications of SNOSFET. Application of SNOS field effect transistors have been proposed for both logic circuits and nonvolatile memory arrays, and operating characteristics with write and erase were investigated. As a results, memory window size of four terminal devices and two terminal devices was established low conductance stage and high conductance state, which was operated in “1” state and “0”state with write and erase respectively. And the operating characteristics of unit cell in matrix array were investigated with implementing the composition method of four and two terminal nonvolatile memory cells. It was shown that four terminal 2${\times}$2 matrix array was operated bipolar, and two termineal 2${\times}$2 matrix array was operated unipolar.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.101-104
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• 2002

The beam splitter is important in optical communication systems. in this work, thc quasi-state based on four-mode interference in thc MMI coupler is proposed, and so, device length is shorten to be 1/5 of general designed length. We designed thc polarization splitter based on thc concept of quasi-state. Thc analysis has been accomplished by thc effective index method(EIM) and thc mode propagation analysis(MPA) for given structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.272-278
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• 2008

This paper investigated the a-si:H gate driver with the stepwise gate signal. In 1-chip type mobile LCD application the stepwise gate signal for low power consumption can be used by adding simple switching circuit. The power consumption of the a-Si:H gate driver can be decreased by employing the stepwise gate signal in the conventional circuit. In conventional one, the effect of stepwise gate signal can decrease slew rate and increase the fluctuation of gate-off state voltage, In order to increase the slew rate and decrease the gate off state fluctuation, we proposed a new a-Si:H TFT gate driver circuit. The simulation data of the new circuit show that the slew rate and the gate-off state fluctuation are improved, so the circuit can work reliably.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.113-116
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• 1996

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.457-460
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• 1998

Present paper is devoted to the brief analysis of the present state and the prospects for the future of technology of the high frequency devices and high speed integrated circuits based on the $A_{3}B_{5}$ semiconductor compounds, including the $A_{3}B_{5}$-heterostructures, in the republics of the former USSR. tunneling quantum well-structures were widely used.