Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Design of 60 V TDMOSFET for Protection Circuit Module

Protection Circuit Module에 최적화된 60 V급 TDMOSFET 최적화 설계에 관한 연구

  • Lee, Hyun-Woong (School of Electrical Engineering, Korea University) ;
  • Jung, Eun-Sik (School of Electrical Engineering, Korea University) ;
  • Oh, Reum (School of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (School of Electrical Engineering, Korea University)
  • 이현웅 (고려대학교 전기공학과) ;
  • 정은식 (고려대학교 전기공학과) ;
  • 오름 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Received : 2012.03.16
  • Accepted : 2012.03.26
  • Published : 2012.05.01
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Abstract

Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.

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References

  1. E. G. Kang, B. S. Ahn, and T. J Nam, J. KIEEME, 23, 273 (2010).
  2. B. J. Baliga, Fundamentals of Power Semiconductor Devices, (Springer, 2008) p. 283.
  3. J. S. Lee, S. S. Kyoung, E. G. Kang, and M. Y. Sung J. KIEEME, 21, 889 (2008).
  4. J. I. Lee, S. S. Kyoung, J. C. Choi, and M. Y. Sung, J. KIEEME, 21, 74 (2008).
  5. J. H. Oh, S. M Yang, E. S. Jung, and M. Y. Sung, J. KIEEME, 23, 671 (2010).

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