• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.638-644
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• 2010

We have carry out numerical simulation of the electric-optical characteristics of organic light emitting diodes with gradient-doped emitting layer which were reported to be effective in improving luminous efficiency and lifetime. In this paper, the basic structure is comprised of ITO/NPB/$Alq_3$:C545T[%]/$Alq_3$/LiF/Al, six devices by separating the emitting layer of $Alq_3$:C545T[%] were studied. As the result, the uniformly-doped devices exhibited superior luminous efficiency-current density characteristics over conventional undoped device. In the case of gradient-doped devices, electric-optical characteristics were improved similar to uniformed-doped devices, unusually the distribution of traped-charge density in the OLED devices was shown as the staircase.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.1-10
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• 2017

With the current global need for eco-friendly energies, the large scale use of Electric Vehicles (EVs) is predicted. However, the need to frequently charge EVs to an electrical power system involves risks such as rapid increase of demand power. Therefore, in this paper, we propose a practical smart EV charging scheme considering a Time-of-Use (ToU) price to prevent the rapid increase of demand power and provide load leveling function. For a more practical analysis, we conduct simulations based on the actual distribution system and driving patterns in the Republic of Korea. Results show that the proposed method provides a proper load leveling function while preventing a rapid increase of demand power of the system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.397-398
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• 2009

In oder to investigate of partial discharge of nano-composites materials, we have studied partial discharge appling voltage from 5 to 30 [kV] to make an artificial defect with the epoxy adding to 0, 0.4, 0.8, and 1.6 [wt%], respectively. The experimental result, we have found that $SiO_2$ of 0.4 (wt%] was superior to others also, it is found that the effect of isolate diagnosis to get the slope for the discharged electric charge distribution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.120-123
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• 2000

Bridge Type Cell structure informed that the efficiency is increased by about 30% compared to the conventional type has been investigated during addressing period. As a result, the addressing time is decreased by about 20% compared to the conventional type. And wall charge distribution was analyzed Quantitatively in three electrodes during addressing period.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.374-377
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• 2003

In this paper, turn on characteristics of (Punch-Through Insulated Gate Bipolar Transistor) PT-IGBT has been studied. Based on the transient power loss, turn on charges first base to collector capacitance. Furthermore we present the charge variation in the base including n+ buffer layer to express the transient turn-on characteristics of the device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.24-26
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• 1988

The electrical properties of thin nitrided thermal oxides prepared by rapid thermal nitridation(RTN) have been studied. The flatband voltages were calculated using C-V measurement and found to vary as nitridation time and temperature. After nitridation an increase in the fixed oxide charge density was always observed, but the distribution of it as a function of annealing time was found to be random. The breakdown voltages were measured using curve tracer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.165-167
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• 2002

Stable reset and address discharge are very important when they show apparent display. But the shape of reset and address discharge and wall-charge distribution change, according to the variation on temperature. Namely, it is very difficult to show exact picture. This study represents how Dynamic Margin is height and dielectric thickness. When barrier rib height is $100{\mu}m$ and dielectirc thickness is $40{\mu}m$, it is responded the most sensitively by decreasing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.25-28
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• 2000

In this study, Transient Characteristics of the Punch-Through Insulated Gate Bipolar Transistor (PT-IGBT) has been studied. On the contraty to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), PT-IGBT has buffer layer It has a simple drive circuit controlled by the gate voltage of the MOSFET and the low on-state resistance of the bipolar junction transistor. In this paper, the transient characteristics with temperature of the PT-IGBT has been analyzed analytically. PT-IGBT is made to reduce switching power loss. Excess Minority carrier distribution inactive base region and base charge, the rate of voltage with time is expressed analytically to include buffer layer.

• Journal of the Korean Applied Science and Technology
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• v.31 no.3
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• pp.402-407
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• 2014

Herein, we describe the effect of the cooling-off condition of a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) film on its molecular distribution and the resultant electrical properties. Since the solvent in a TIPS-pentacene droplet gradually evaporates from the rim to the center exhibiting a radial form of solute, for a quenched case, domains of the TIPS-pentacene film are aboriginally spread showing original features of radial shape due to suppressed molecular rearrangement during the momentary cooling period. For the slowly cooled case, however, TIPS-pentacene molecules are randomly rearranged during the long cooling period. As a result, in the lopsided electrodes structure proposed in this work, the charge transport generates more effectively under the case for radial distribution induced by the quenching technique. It was found that the molecular redistribution during the cooling-period plays an important role on the magnitude of the mobility in a solution-processed organic transistor. This work provides at least a scientific basis between the molecular distribution and electrical properties in solution-processed organic devices.