Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1988.05a
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- Pages.24-26
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- 1988
Electrical Properties of MOS Devices by Rapid Thermal Nitridation(RTN)
RTN에 의해 제작된 MOS소자의 전기적 특성
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Chang, Eui-Gu
(Department of Electrical Engineering, Chung-Ang University) ;
- Choi, Won-Bun (Department of Electrical Engineering, Chung-Ang University) ;
- Lee, Cheol-In (Department of Electrical Engineering, Chung-Ang University)
- Published : 1988.05.27
Abstract
The electrical properties of thin nitrided thermal oxides prepared by rapid thermal nitridation(RTN) have been studied. The flatband voltages were calculated using C-V measurement and found to vary as nitridation time and temperature. After nitridation an increase in the fixed oxide charge density was always observed, but the distribution of it as a function of annealing time was found to be random. The breakdown voltages were measured using curve tracer.
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