• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.822-827
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• 2000

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24$\AA$ for tunnel oxide, 74 $\AA$ for nitride and 25 $\AA$ for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97$\times$10$\^$10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04$\times$10$\^$19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.801-807
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• 2008

Recently, CV, CN-CV and CNCV-W cable are used for HVDC transmission and distribution cable. However, XLPE which is used as insulation layer of power cable has thermosetting properties. It is very difficult to recycling. In this paper, we prepared HDPE/EVA film, which the blending ratio are 80:20, 70:30, 60:40, 50;50 respectively for the purpose of recycling. Main factor such as electric field distribution and its resistivity in insulation system affected on insulation performance and reliability for HVDC applications. Therefore, electric field distribution formed by space charge and characteristics of volume resistivity was currently investigated. We suggest the possibility of utilization for HVDC insulation layer from the results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 B
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• pp.828-830
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• 2000

This paper describes BIEM(Boundary Integral Equation Method) for computation of three dimensional electric field distribution and numerical method that an equivalent charge density is unknown variable. After computing numerically the surface charge distribution. the distribution of both potential and electric field are obtained. Finally, this numerical method is applied to the concentric sphere and the coaxial cylindrical model and numerical result is compared to the analytic solution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.844-847
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• 2001

In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.148-152
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• 2004

The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.82.2-82.2
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• 2011

A channel design which is closely related with the mass transport overpotential is one of the most important procedures to optimize the whole fuel cell performance. In this study, three dimensional results of a numerical study for gas distribution in channels of a molten carbonate fuel cell (MCFC) unit cell for a 1kW class stack was presented. The relationship between the fuel and air distribution in the anode and cathode channels of the unit cell and the electric performance was observed. A charge balance model in the electrodes and the electrolyte coupled with a heat transfer model and a fluid flow model in the porous electrodes and the channels was solved for the mass, momentum, energy, species and charge conservation. The electronic and ionic charge balance in the anode and cathode current feeders, the electrolyte and GDEs were solved for using Ohm's law, while Butler-Volmer charge transfer kinetics described the charge transfer current density. The material transport was described by the diffusion and convection equations and Navier-Stokes equations govern the flow in the open channel. It was assumed that heat is produced by the electrochemical reactions and joule heating due to the electrical currents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.377-378
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• 2008

Space charge formation in various glass materials under electron beam irradiation was investigated. Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples. Furthermore, the dependence of the polarity of accumulated charges on the component of glass materials is discussed by using the models of energy bands.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.268-269
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• 2008

Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.96-100
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• 2001

We have measured the space charge distribution and PD patterns simultaneously in XLPE under AC voltages by modified PEA method in order to investigate the effect of space charge on PD patterns in XLPE with air-gap. From the experimental results, we found that the dynamic space charge accumulated on the surface of XLPE due to the PD dominantly affects the PD pattern in the dielectric-barrier structure and governs the voltage across the air-gap. Moreover, the space charge formed by applying DC voltage still remained after applying AC voltage, which means that the space charge formed during DC strength test is likely to be fatal to the long-time AC insulating characteristics of HV equipments. On the other hand, the PD patterns was much influenced by the pre-formed space charge by DC application. Therefore, it is possible to detect the effects of space charge by monitoring the infinitesimal change of PD patterns before and after DC strength.

• Journal of information and communication convergence engineering
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• 제4권2호
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• pp.84-87
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• 2006

Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.