Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.844-847
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- 2001
Analysis of excess minority carrier and charge wish lifetimes in N-dirft region of NPT-IGBT
수명시간에 따른 NPT-IGBT의 N-drift 영역에서의 과잉소수 캐리어와 전하량 분석
Abstract
In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.
Keywords
- Non-Punch Through Insulated Gate Bipolar Transistor(NPT IGBT);
- lifetime;
- N-drift;
- excess minority carrier;
- accumulated charge