• Journal of Magnetics
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• 제13권4호
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• pp.132-135
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• 2008

The authors studied the conduction mechanism in an uranium doped low dimensional magnetic system $Ca_2CuO_3$. This system exhibits the S=1/2 quasi 1D antiferromagnetic chains of -Cu-O- with strong magnetic coupling, and demonstrates continuous semiconductor-like behavior with constant covalent insulator character. This paper identifies the conduction is due to thermally activated phonon-assisted electron hopping between dopant uranium sites. The parameter a, the characteristic for hopping probability, was determined to be 0.18 ${\AA}^{-1}$. This value manifests a relatively stronger hopping probability for $Ca_2CuO_3$ as compared with other uranium doped ceramics.

• 한국재료학회지
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• 제6권12호
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• pp.1242-1247
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• 1996

Spatially fixed bichromophoric systems with nonidentical chromophores have been extensively employed for studies of electron transfer and excitation transfer. Excitation hopping behavior between two naphthy1 moieties on 7,14-dihydro-7,14-ethanodibenz[a,h] anthracene(DEA)has been explored by the time-resolved fluorescence anisotropy measurements. The experimentally obtained value of the hopping rate in DEA agrees at least qualitatively with that calculated on the basis of the Dexter's theory, but disagrees with that calculated on the basis of the Forster's theory, indicates that for a pair of donor and acceptor with inter-chromophore separation as short as 4.5 $\AA$, excitation transfer via electron exchange is a predominant process.

• Bulletin of the Korean Chemical Society
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• 제7권2호
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• pp.108-110
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• 1986

The solution epr spectra of ${\alpha}-1,2,3-[H_nPV(IV)V_2W_9O_{40}]^{(7-n)-}$were measured at various pH and three protonated species have been identified. The spectrum of $H_3PV(IV)Ⅴ_2$ consisting of 8 lines indicates that the V-OH-V bridge prevents effectively the electron transfer between the vanadium atoms. The spectrum of $H_2PV(IV)V_2$ consisting of 15 lines can be interpreted by assuming that the electron is hopping fast between the two vanadium atoms in the V-O-V sequence. The multi-line spectrum of $HPV(IV)V_2$ is interpreted as a poorly resolved 43-line spectrum which originates from the electron hopping among the three vanadium atoms with the forward and backward transition probabilities of 4:1 in the OH-V-O-V sequence.

• 한국세라믹학회지
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• 제40권9호
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• pp.849-854
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• 2003

80-373 K의 온도범위에서 La$_{2.1}$ Sr$_{1.9}$ Mn$_3$O$_{10}$ 의 열기전력의 온도의존성을 조사하였다. 저온강자성영역에서 열기전력(S)의 온도의존성은 광범위한 온도영역에서 S＝S$_{0}$ ＋S$_{1.5}$ T$^{1.5}$ ＋S$_4$T$^4$로 표현할 수 있었다. 강자성 전이온도 이하에서 열기전력의 완만한 피크 및 복잡한 온도의존성은 편력성 강자성체에서 예상되는 electron-magnon 산란으로 이해할 수 있으며, 고온에서의 열기전력은 Mott의 small polaron hopping 모델로 설명 가능하였다.

• Journal of Information Display
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• 제7권1호
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• pp.1-6
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• 2006

A 10" carbon nanotube field emission display device was fabricated with a novel structure with a hopping electron spacer (HES) by screen printing technique. HES plays a role of preventing the broadening of electron beams emitted from carbon nanotubes without electrical discharge during operation. The structure of the novel tetrode is composed of carbon nanotube emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top side of a HES, and an anode. HES contains funnel-shaped holes of which the inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes. They hop along the hole surface to the top extracting electrode. In this study the effects of the addition of HES on emission characteristics of field emission display were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the field emission display panel as a post-treatment.

• 한국재료학회지
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• 제24권11호
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• pp.604-609
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• 2014

The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

• 한국재료학회지
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• 제18권1호
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• pp.26-31
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• 2008

The dc resistivity and thermoelectric power of bilayered perovskite $La_{1.4}(Sr_{0.2}Ca_{1.4})Mn_2O_7$ were measured as a function of the temperature. In the ferromagnetic phase, ${\rho}(T)$ was accurately predicted by $a_0+a_2T^2+a_{4.5}T^{4.5}$ with and without an applied field. At high temperatures, a significant difference between the activation energy deduced from the electrical resistivity and thermoelectric power, a characteristic of small polarons, was observed. All of the experimental data can be feasibly explained on the basis of the small polaron.

• Bulletin of the Korean Chemical Society
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• 제31권6호
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• pp.1649-1656
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• 2010

Internal reorganization energy due to the structural relaxation in hole or electron hopping mechanism is one of the measurements of key indices in designing an organic thin film transistor (OTFT) for flexible display devices. In this study, the reorganization energies of dicyanoanthracenes for the hole and electron transfer were estimated by adiabatic potential energy surface and normal mode analysis method in order to examine the effect on the energies for the positional variation of the cyano substituents in the anthracene as a protocol of acenes to design an organic field effect transistor. The reorganization energy for the hole transfer was reduced considerably upon cyanation of anthracene, especially at the 9,10-positions of anthracene, and the origin of the reduction was interpreted in terms of understanding the coupling of vibrational modes to the hole transfer.

• Coupled systems mechanics
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• 제6권1호
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• pp.75-96
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• 2017

As electron donor/acceptor materials for organic photovoltaic cells, small-molecules donors/acceptor are attracting more and more attention. In this work, we investigated the electronic structures, electrochemical properties, and charge carrier transport properties of four recently-synthesized small-molecule donors/acceptor, namely, DPDCPB (A), DPDCTB (B), DTDCPB (A1), and DTDCTB (B1), by a series of ab initio calculations. The calculations look into the electronic structure of singly oxidized and reduced molecules, the first anodic and cathodic potentials, and the electrochemical gaps. Results of our calculations were in accord with those from experiments. Using Marcus theory, we also computed the reorganization energies of hole/electron hoppings, as well as hole/electron transfer integrals of multiple possible molecular dimer configurations. Our calculations indicated that the electron/hole transport properties are very sensitive to the relative separations/orientations between neighboring molecules. Due to high reorganization energies for electron hopping, the hole mobilities in the molecular crystals are at least an order of magnitude higher than the electron mobilities.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.629-632
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• 2013

Many properties of inorganic compounds are sensitive to changes in the point-defect concentrations. In minerals, such changes are influenced by temperature, pressure, and chemical impurities. Olivines form an important class of minerals and are magnesium-rich solid solutions consisting of the orthosilicates forsterite $Mg_2SiO_4$ and the fayalite $Fe_2SiO_4$. Orthosilicates have an orthorhombic crystal structure and exhibit anisotropic electronic and ionic transport properties. We examined the anisotropy of the electrical conductivity of $Fe_2SiO_4$ under the assumption that the electronic conduction in $Fe_2SiO_4$ occurs via a small polaron hopping mechanism. The anisotropic electrical conductivity is well explained by the electron transfer integrals obtained from the spin dimer analysis based on tight-binding calculations. The latter analysis is expected to provide insight into the anisotropic electrical conductivities of other magnetic insulators of transition metal oxides.