• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.396-402
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• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.75-75
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• 2003

본 연구에서는 대기 중 극 미량으로 존재하는 환경 유해 가스 성분을 검출할 수 있는 미세 소자로의 응용을 위해 마이크로 칸티레버를 제작하고 가스 센서로의 활용 가능성을 검토하였다. 마이크로 칸티레버는 크게 구동층 캐패시터로서 대표적인 압전 재료인 Pb(Zr,Ti)O$_3$ (PZT)를 사용하고 SiNx 박막을 지지층으로 하는 형태로 제작되었다. 제작된 마이크로 칸티레버는 치수 및 형상에 따라 17~29 KHz 의 기본 공진 주파수 값을 나타내었다. Electron beam evaporator를 이용한 copper (Cu) 박막의 단계적인 증착을 통해 칸티 레버 표면에 질량을 증가시키고 그에 따른 마이크로 칸티레버의 공진주파수 변화를 관찰한 결과 질량 증가에 대해 34 Hz/ng의 선형적인 주파수 감소를 나타내었으며, 이로부터 694.4 $\textrm{cm}^2$/g 의 gravimetric sensitivity factor를 얼을 수 있었다. 마이크로칸티레버의 가스 감지능력 시험을 위해 가스 흡착층으로 일차 알콜류의 vapor를 흡착 하는 것으로 보고된 poly methyl metacrytate (PMMA)를 마이크로 칸티레버 표면에 코팅하였다. 마이크로칸티 레버의 기본 공진 주파수 및 PMMA 흡착층 형성과 가스의 흡착에 따른 주파수 변화는 마이크로 칸티 레버로부터 의 전기적 신호를 이용하는 복소 임피던스 분석에 의해 측정되었다. PMMA가 코팅된 마이크로 칸티레버는 ethanol 및 methanol vapor 의 농도가 증가함에 따라 선형적인 공진주파수 감소를 나타내었으며, methanol vapor 의 경우 0.06 Hz/ppm 의 가스 검출 감도를 얻을 수 있었다.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.163-164
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and corning glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S in $600{\AA}$, $10{\sim}5{\AA}/s$. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.130-131
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and coming glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S 600 $\AA$, 10~5 $\AA$/s. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.184-188
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• 2016

Highly ordered $SnO_2$ and NiO nanocolumns have been successfully achieved by glancing-angle deposition (GLAD) using an electron beam evaporator. Nanocolumnar $SnO_2$ and NiO sensors exhibited high performance owing to the porous nanostructural effect with the formation of a double Schottky junction and high surface-to-volume ratios. When all gas sensors were exposed to various gases such as $C_2H_5OH$, $C_6H_6$, and $CH_3COCH_3$, the response of the highly ordered $SnO_2$ nanocolumn were over 50 times higher than that of the $SnO_2$ thin film. This work will bring broad interest and create a strong impact in many different fields owing to its particularly simple and reliable fabrication process.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1035-1038
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• 2002

The electrical properties of Porous polycrystalline silicon Nano-Structure (PNS) as a cold cathode were investigated as a function of anodizing condition, the thickness of Au film as a top electrode and the substrate temperature. Non-doped 2${\mu}m$-polycrystalline silicon was electrochemically anodized in HF: ethanol (=1:1) mixture as a function of the anodizing condition including a current density and anodizing time. After anodizing, the PNS was thermally oxidized for 1 hr at 900 $^{\circ}C$. Then, 20nm, 30nm, 45nm thickness of Au films as a top electrode were deposited by E-beam evaporator. Among the PNSs fabricated under the various kinds of anodizing conditions, the PNS anodized at a current density of 10mA/$cm^2$ for 20 sec has the lowest turn-on voltage and the highest emission current than those of others. Also, the electron emission properties were investigated as functions of measuring temperature and the different thickness of Au film as a top-electrode.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.5
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.367-372
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• 2002

The vertically well-aligned carbon nanotubes(CNTs) were successfully grown on Ni coated silicon wafer substrate by DC bias-assisted PECVD(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15~30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of gas mixture such as $C_2H_2-NH_3$ was systematically investigated by adjusting the gas mixing ratio at $570^{\circ}C$ under 0.4Torr. The diameter of the grown CNTs was 40~200nm and the diameter of the CNTs increased with increasing the Ni particles size. TEM images clearly showed carbon nanotubes to be multiwalled. The measured turn-on field was $3.9V/\mu\textrm{m}$ and an emission current of $1.4{\times}10^4A/\textrm{cm}^2$ was $7V/\mu\textrm{m}$. The CNTs grown by bias-assisted PECVD was able to demonstrate high quality in terms of vertical alignment, crystallization of graphite and the processing technique at low temperature of $570^{\circ}C$ and this can be applied for the emitter tip of FEDs.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.27-30
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• 2012

This paper proposes a micro gas sensor for measuring $H_2S$ gas. This is based on a $SnO_2$-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The $SnO_2$-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace. To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers. The sensitivities are measured by applying $H_2S$ gas. It has a concentration of 1 ppm at an operating temperature of $270^{\circ}C$. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of $H_2S$ gas is approximately 68%. This is approximately 12% more than that of a sensor with one-layer.

• Journal of Electrochemical Science and Technology
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• v.13 no.4
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• pp.417-423
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• 2022

With the emerging importance of catalysts for water electrolysis, developing efficient and inexpensive electrocatalysts for water electrolysis plays a vital role in renewable hydrogen energy technology. In this study, a 1nm thickness of TiC-supported Ru catalyst for hydrogen evolution reaction (HER) has been successfully fabricated using an electron (E)-beam evaporator and thermal decomposition of gaseous CH₄ in a furnace. The prepared Ru/TiC catalyst exhibited an outstanding performance for alkaline hydrogen evolution reaction with an overpotential of 55 mV at 10 mA cm^-2. Furthermore, we demonstrated that the outstanding HER performance of Ru/TiC was attributed to the high surface area of the support and the metal-support interaction.