• Korean Journal of Materials Research
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• v.11 no.3
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• pp.197-202
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• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.157-162
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• 2016

Porous $Co(OH)_2$ nano-flake thin films were prepared by a potential-controlled electro-deposition technique at various deposition voltage (-0.75, -1.0, -1.2, and -1.4 V) on Ti-mesh substrates for supercapacitor application. The potential of electrode was controlled to regulate the film thickness and the amount of $Co(OH)_2$ nano-flake on the titanium substrate. The film thickness was shown to reach the maximum value of $34{\mu}m$ at -1.4 V of electrode potential, where 17.2 g of $Co(OH)_2$ was deposited on the substrate. The specific discharge capacitances were measured to be 226, 370, 720, and $1008mF\;cm^{-2}$ in the 1st cycle corresponding to the films which were formed at -0.75, -1.0, -1.2, and -1.4 V of electrode potentials, respectively. Then the discharge capacities were decreased to be 206, 349, 586 and $866mF/cm^{-2}$, where the persistency rates were 91, 94, 81, and 86%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.155-158
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• 2000

Influence of sustain pulse-width on electro-luminous efficiency is experimentally investigated for surface discharge of AC-PDP. A square pulse with variable duty ratio and rising time of 300 ns has been used in the experiment. It is found that the firing voltage is decreased as the pulse-width is increased from 2 ${\mu}s$ to 8 ${\mu}s$ with sweeping frequency range of 10 kHz to 50 kHz. It has been found that the optimal sustain pulse-width is in the range of $3{\sim}4{\mu}s$ under driving frequency range of 30 kHz and 50 kHz, based on observation of memory coefficient, wall charge, and wall voltage as well as luminous efficiency.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.1
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• pp.28-35
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• 2004

$N_2$ has been one of the most useful gases in industrial application, for example, plasma ashing, surface cleaning and decomposition of pollution gases. In order to clarify $N_2$ plasma properties and increase practical applications, many experimental and theoretical investigations have been carried out until now on. In this papa, we examined the characteristics of $N_2$ RF Plasmas using one-dimensional fluid model. $N_2$ plasmas showed a double-layer structure in both sheath regions as the power source voltage becomes higher. Generally, a double-layer structure should be showed in electro-negative plasmas, but not in electro-postive plasmas such as $N_2$ discharge. However, most electrons in $N_2$ plasmas lost their energy by many excitation reactions in the near of both electrodes where electron collisions were actively executed and such continuous reactions during an RF period made this structure strong with increase of the power source voltage. The dependence of $N_2$ plasma properties on pressure was also discussed.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.712-717
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• 2002

New wet chemical method so called precipitation-evaporation method was suggested for preparing spinel structure lithium manganese oxide ($LiMn_2$$O_4$) for Li ion secondary battery. Using precipitation-evaporation method, $LiMn_2$$O_4$ cathode materials suitable for Li ion secondary batteries can be synthesized. Single spinel phase $LiMn_2$$O_4$ powder was synthesized at lower temperature compared to that of prepared by solid-state method. $LiMn_2$$O_4$ powder prepared by precipitation-evaporation method showed uniform, small size and well defined crystallinity particles. Li ion secondary battery using $LiMn_2$$O_4$ as cathode materials prepared by precipitation-evaporation method and calcined at $800^{\circ}C$ showed discharge capacity of 106.03mAh/g and discharge capacity of 95.60mAh/g at 10th cycle. Although Li ion secondary battery showed somewhat smaller initial capacity but good cyclic ability. It is suggested that electro-chemical properties can be improved by controlling particle characteristics by particle morphology modification during calcination and optimizing Li ion secondary battery assembly conditions.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.417-420
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• 2007

Micro parts are usually used of producing by micro-electro-mechanical systems(MEMS). In this paper, we present some fundamental results concerning on the MEMS, extrusion condition on the micro forming characteristics and new micro forward extrusion machine has been developed. In the first step, we manufactured micro dies in two kinds of sections. One is a circle section, another is a cross section. The process for fabricating micro dies combines a deep UV-lithography, anisotropic etching techniques and metal electroplating with bulk silicon based on Ni with a thickness of $50{\mu}m$. The outer diameter of Ni-micro dies is 3mm and the diameter of extrusion section is $270{\mu}m$ for a cross section, $500{\mu}m$ for a circle section. The low linear density polyethylene(LLEPD) in the shape of a pellet has been used of micro extrusion. The billet was placed in a container manufactured by electric discharge machining and extruded through the micro die by a piezoelectric actuator. The micro extrusion has succeeded in a forming such micro parts as micro bars, micro cross shafts.

• Journal of IKEEE
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• v.13 no.1
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• pp.87-93
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• 2009

The paper introduces a silicon controlled rectifier (SCR)-based device with high holding voltage for ESD power clamp. The holding voltage can be increased by extending a p+ cathode to the first n-well and adding second n-well wrapping around n+ cathode. The increase of the holding voltage above the supply voltage enables latch-up immune normal operation. In this study, the proposed device has been simulated using synopsys TCAD simulator for electrical characteristic, temperature characteristic, and ESD robustness. In the simulation result, the proposed device has holding voltage of 3.6V and trigger voltage of 10.5V. And it is confirmed that the device could have holding voltage of above 4V with the size variation of extended p+ cathode and additional n-well.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.8
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• pp.834-839
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• 2012

Recently, mechanical components with miniaturized size, complex shape and fine surface are on demand from industries such as mobile electronics, medical devices and defense. The size of them is smaller than several millimeters, the shape has micro-holes, curve, or multi-step and the surface is mirror-like. This features are not able to be machined with the conventional machining, therefore electro-discharge machining (EDM), cutting, and laser machining have been applied. If the technologies are assisted by vibration, high aspect ratio and good surface are to be achieved. In this paper, prior and current researches of vibration-assisted machining are reviewed. Machining mechanisms with vibration-assisting are explained, their effects are shown, and vibrating apparatuses are discussed. Especially, comparison between with and without vibration assisting is presented. This review shows the vibration-assisted machining is effectively fabricate the components with small and complicated shape and fine surface finish.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.4
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• pp.658-665
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• 2012

Micro-EDM is widely used in metallic pattern, electronics, nuclear power and industry in the form of precision process. The improvement of Electro Discharge Machining has been on a steady progress since $19^{th}$ century. The technology has overcome the limits of the traditional precision process, enabling micro-EDM, micro electrolytic machining, micro drilling, micro punching and laser beam machining, which create versatile products with smaller sizes. What have been known about the major feature of Micro-EDM is high thermal energy so that their products are free from the hardness of their products as long as they are electrical conductor. However, each metal is suspected to have different features and natures even if they are created through the same procedure. In this thesis, the methodology of Micro-EDM and how to categorize them are explained. Also, the nature of the examined materials with surface shape and surface roughnes are analyzed. The results of the experiments are expected to understand surface roughness and workability of other materials for Micro-EDM.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.