• Journal of IKEEE
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• v.18 no.4
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• pp.471-477
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• 2014

In this paper, we propose a low-cost license plate recognition system based on smart cam system using Android. The proposed system consists of a portable device and server. Potable device Hardware consists of ARM Cortex-A9 (S5PV210) processor control unit, a power supply device, wired and wireless communication, input/output unit. We develope Linux kernel and dedicated device driver for WiFi module and camera. The license plate recognition algorithm is consisted of setting candidate plates areas with canny edge detector, extracting license plate number with Labeling, recognizing with template matching, etc. The number that is recognized by the device is transmitted to the remote server via the user mobile phone, and the server re-transfer the vehicle information in the database to the portable device. To verify the utility of the proposed system, user photographs the license plate of any vehicle in the natural environment. Confirming the recognition result, the recognition rate was 95%. The proposed system was suitable for low cost portable license plate recognition device, it enabled the stability of the system when used long time by using the Android operating system.

• Composites Research
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• v.30 no.1
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• pp.46-51
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• 2017

Structural battery has been researched extensively to combine the functions of the battery and structure without gravimetric or volumetric increments compared to their individual components. The main idea is to employ carbon fabric as the reinforcement and electrode, glass fabric as the separator, and solid-state electrolyte which can transfer load. However, state-of-the-art solid-state electrolytes do not have sufficient load carrying functionality and exhibiting appropriate ion conductivity simultaneously. Therefore, in this research, a system which has both battery and load carrying capabilities using glass fabric separator and liquid electrolyte was devised and tested to investigate the potential and feasibility of this structural battery system and observe electric properties. It was observed that elongating separator decreased electrical behavior stability. A possible cause of this phenomenon was the elongated glass fabric separator inadequately preventing the penetration of small particles of the cathode material into the anode. This problem was verified additionally by using a commercial separator. The characteristic of the glass fabric and the interface between the electrode and glass fabric needed to be further studied for the realization of such a load carrying structural battery system.

• Journal of the Korean Applied Science and Technology
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• v.31 no.2
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• pp.218-224
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• 2014

Biodegradable conductive composite films of polylactic acid(PLA) were prepared with various amounts of polyaniline(PAni) doped with dodecylbenzenesulphonic acid (DBSA) by solution blending technique to identify their mechanical and electric properties. 15 mol% of DBSA doped PAni was easily obtained by polymerizing of aniline in the presence of APS and DBSA in THF at $0^{\circ}C$. FE SEM characterization showed that PAni were well spread on the PLA domains. The tensile strength of composite film with 15 wt% of PAni was significantly decreased from $565.3kg_f/cm^2$ for PLA film itself to $309.7kg_f/cm^2$. Elongations of all PAni/PLA composite films were also decreased up to 3-6%. Electrical conductivity of $2.9{\times}10^{-3}$ S/cm could be achieved for the composite film containing 15 wt% of PAni-DBSA. Thermal stability of these composite films measured by thermogravimetric analysis(TGA) showed a slight decrease with the amount of PAni in PAni/PLA composite films at temperature lower than $300^{\circ}C$. However, the final weight of char was strongly depended with the amount of PAni in original composite films. Conclusively, PAni/PLA composite films containing more than a 15 wt% of PAni could be used for intercepting electromagnetic and preventing electrostatic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Polymer(Korea)
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• v.38 no.2
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• pp.180-187
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• 2014

Nanocomposites including graphene oxide (GO) and conducting polymers (PPy, PANI and PEDOT) were prepared via an in-situ chemical polymerization process, and their characteristic properties depending upon the change of conducting polymer (CP) content were analyzed. A confirmation was made on not only the functional groups formed in GO but also the presence of CP existent in the nanocomposites. The molecular interaction between GO and poly(4-styrene sulfonic acid) (PSSA) or CP in the nanocomposites was proposed. With the increase of PEDOT content in the GOPSS/PEDOT nanocomposite, the estimated value of $I_D/I_G$ regarding the Raman analysis of them was decreased and a major change of their Raman spectra characteristic peaks was observed. In the GO-PSS/PEDOT nanocomposite, PEDOT molecules made an exfoliation of GO-PSSA layers and thus they were intercalated among layers. Such a unique molecular morphology induced the highest electrical conductivity for the GO-PSS/PEDOT nanocomposite among three kinds of nanocomposites prepared in this study. It is also noted that the uniform morphology confirmed in this study helped a thermal stability improvement in the nanocomposite due to the presence of GO or GO-PSSA acting as a thermal barrier.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.36-43
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• 2000

In oder to enhance the selectivity of TMA(trimethylamine) gas, the ZnO-based films which were doped with $Al_2O_3$, $TiO_2, $In_2O_3$ and $V_2O_5$ catalysts with various weight percents were deposited in oxygen by RF magnetron sputtering method. To improve electrical stability of sensors, the ZnO-based films were annealed in oxygen at $700^{\circ}C$ for 1 hour. The TMA selectivity of sensors was defined by the magnitude($S_{TMA}/S_{DMA}$ and $S_{TMA}/S_{NH3}$) of TMA sensitivity relative to DMA and sensitivity ammonia($NH_3$) sensitivity, respectively. The $ZnO+Al_2O_3(4\;wt.%)+TiO_2(1\;wt.%)+In_2O_3(1\;wt.%)$ sensor showed high $S_{TMA}/S_{DMA}$ of 5.9 and $S_{TMA}/S_{NH3}$ of 26 to 160 ppm at the working temperature of $300^{\circ}C$ respectively.

• Applied Chemistry for Engineering
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• v.19 no.4
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• pp.413-420
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• 2008

Over the past decade, there have been significant advancement in the field of electrospinning area. This study has focused on preparing yarn using polycarbonate (PC) nanofibers including modified multi-walled carbon nanotube (mMWNT) by solution electrospinning process using the mixture of solvents consisting of tretrahydronfuran (THF) and N,N-dimethylformamide (DMF). In order to enhance the dispersion, MWNT was chemically modified. TEM analysis for the prepared PC/mMWNT nanofibers reveals that mMWNT was well-dispersed into the PC nanofiber matrix. Also with increasing contents of mMWNT, thermal stability of PC/mMWNT nanofibers was improved than that of PC nanofibers. Moreover when 3 to 5 wt% of mMWNT was added, the nanofibers showed good electrical properties expecting antistatic effect, ranging 109.1~109.5 ${\Omega}$. It was confirmed that the multi-filament fibers using PC/mMWNT had $60{\sim}100{\mu}m$ in diameter and 4~5 cm in length.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.527-532
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• 2005

Ionic polymer metal composites (IPMC) are soft polymeric smart materials having large displacement at low voltage in air and water. The polymeric electrolyte actuator consists of a thin and porous membrane and metal electrodes plated on both faces, in impregnation electro-plating method. The response and actuation of actuator are governed. Among many factors governing the activation and response of IPMC actuator, the surface electrode plays an important role. In this study, the well-designed modification of electrode surface was carried out in order to improve the chemical stability well as electromechanical characteristics of the IPMC actuator. We employed Ion Beam Assisted Deposition (IBAD) method to prepare the topologically homogeneous thin surface electrode. After roughing the surface of Nafion membrane in order to get a larger surface area, the IPMC was prepared by impregnation for electro-plating and re- coating on the surface through traditional chemical deposition, followed by an additional surface treatment with high conductive metals with IBAD. It was observed that our IPMC specimen shows the enhanced surface electrical properties as well as the improved actuation and response characteristics under applied electric field.