• Journal of Electrical Engineering and Technology
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• v.12 no.3
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• pp.1314-1319
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• 2017

A handheld sheet resistance meter that can easily and quickly measure the sheet resistance of indium tin oxide films was developed. The dual-configuration four-point probe method was adopted for this instrument, which measured sheet resistance in the range from $0.26{\Omega}/sq$. to $2.6k{\Omega}/sq$. with 0.3 % ~ 0.5 % uncertainty. The screen of the instrument displayed the sheet resistance when the probe was in contact with the sample surface and the value continued to be displayed during the probe contact. Even after separating the probe from the surface, the value was still displayed on the screen and could be read easily. A feature of the instrument was the use of the dual-configuration technique to reduce edge effects markedly compared with the single-configuration technique and its ease of operation without applying correction factors for sample size and thickness.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• Journal of IKEEE
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• v.18 no.1
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• pp.8-18
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• 2014

Electrical resistance tomography (ERT) has high temporal resolution characteristics therefore it is used as an alternative technique to visualize two-phase flows. The image reconstruction in ERT is highly non-linear and ill-posed hence it suffers from poor spatial resolution. In this paper, the inverse problem is solved with homogeneous data used as a prior information to reduce the condition number of the inverse algorithm and improve the spatial resolution. Numerical experiments have been carried out to illustrate the performance of the proposed method.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.31-33
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• 2005

In this study, the interfacial reactions and electrical properties of the Sn-35(wt%)Pb-2(wt%)Ag/Cu BGA solder joints after the thermal shock test were investigated with three different kinds of the underfill used commercially. The microstructural evolutions of the solder joints were observed using a scanning electron microscopy (SEM) and the electrical resistance of the solder joints were evaluated with the numbers of thermal shock cycle using the four-prove method. The increase in the $Cu_{6}Sn_{5}$ IMC thickness led to the increase in the electrical resistance with increasing the numbers of the thermal shock cycle. The increase in the electrical resistance of the BGA packages with the underfill was smaller than that without the underfill. The silica contained underfill led to the higher electrical resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1014-1017
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• 2009

In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2007-2010
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• 2008

Vanadium pentoxide ($V_2O_5$) powder was prepared and mixed with Molybdenum Oxides ($MoM_3$) to form Mo-doped and -undoped $VO_2$ films by a sol-gel method on graphite conductive substrates. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) was used to investigate the chemical compositions and microstructures of the Mo-doped and -undoped $VO_2$ films. The variation of electrical resistance was measured as a function of temperature and stoichiometric composition between vanadium and molybdenum. In this study, it was found that Mo-doped and -undoped $VO_2$ shows the typical negative temperature coefficient (NTC) behavior. As the amount of the molybdenum increases, the electrical resistance of Modoped $VO_2$ film gets reduced under the transition temperature and a linear decrease in the transition temperature is observed. From these experimental results, we can conclude that the electrical resistance behavior with temperature change of $VO_2$ films can be utilized as a self-heating source with the electrical current flowing through the graphite substrate.

• Proceedings of the KIEE Conference
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• 2000.11a
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• pp.79-81
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• 2000

Measurement used electrical sounding(MacOHM 2115, Japan) for large scale grounding resistance of So-Yang Dam hydroelectric power plant. To applied measurement method is fall of potential method. This result propose to method of efficient administration for grounding system.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1317-1319
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• 2005

Bottom contact pentacene organic thin-film transistors are fabricated at three different substrate temperatures, $70^{\circ}C$, $80^{\circ}C$ and $90^{\circ}C$. The maximum effective mobility was obtained at $80^{\circ}C$. The contact resistance was extracted by applying two different methods, TLM method and channel-resistance method, and the value shows the minimum at $80^{\circ}C$, which is thought to be the important reason for the best performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.298-302
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• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.56 no.2
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• pp.109-114
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• 2007

This paper summarize about the auxiliary electrode measured a ground resistance. The method to measure a ground resistance is the fall-of-potential method to using an auxiliary electrode. And an auxiliary electrode must be set up on the ground. Today it is so difficult to set up the auxiliary electrode on the ground because of many concrete building and many paved roads. So this paper is regarding a trust analysis of the ground resistance measurement by the substitute auxiliary electrode. It substituted a iron structure around the building, a neutral line multiplex ground to earth, a wire net for auxiliary electrode. This information is confirmed bv compared with the measurement value.