• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.334-337
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• 2002

The Quantum Hall Resistance(QHR) device which consists of GaAs/AlGaAs heterojunction structure is used for the realization of QHR Standard based on QHE. In order to characterize electrical contact resistances and dissipations of the device, it is slowly cooled down for eliminating thermal shock and unwanted noise. Then, the two properties are measured under 1.5 K and 5.15 T. Contact resistances are all within 1.2 Ω and longitudinal resistivities are all within 1 mΩ up to DC 90${\mu}$A. The results mean the device is operated well to realize the QHR Standard. To confirm it, the QHR Standard having the device is compared using a direct current comparator bridge with a 1 Ω resistance standard which the calibrated value is known from QHR standards maintained by other countries. The difference between them is agreed well within measurement uncertainty. It is thus considered that the properties of the device is estimated well and has good performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.119-125
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• 2013

In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.538-539
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• 2006

The influence of the internal current for the ZnO ceramics on the sintering behavior by pulse current sintering (PCS) method was investigated. To clear the dependence of inner current on the sintering behavior of ZnO ceramics, direct measurement of electric resistance of ZnO specimen under sintering by SPS device was carried out. It was observed that electric resistance of specimen decreases with increase in the temperature. The electric resistance begins to decrease from the low temperature of $200^{\circ}C$. The internal structure of sintered ZnO ceramics changed by the control of the internal current in the specimen using $Al_2O_3$ plate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.693-696
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• 2006

In this study, we made the system to measure variation of blood flow using bio-electrical impedance analysis method. The system, which could measure variation of impedance according to pressure change by artificial pressure, consists of pressure measurement and impedance measurement by 4-electrode method. Pressure measurement splits into semiconducting pressure sensor and electronic circuit for processing output signal. In addition, impedance measurement splits into constant current source circuit and lock-in amplifier for detection impedance signal. We experimented feature of impedance measurement using standard resistance to evaluate the system characteristic. As well as, we experimented to estimate variation of blood flow by measuring impedance and blood flow resistance ratio using mean arterial pressure and variation of blood flow with experimental group. As result of this study, blood flow resistance ratio and variation of blood flow were definitely in inverse proportion and were -0.96776 as correlation coefficient by correlation analysis.

• Tribology and Lubricants
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• v.27 no.4
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• pp.209-212
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• 2011

The capacitive application(prove) can be used to measure the complex permittivity of dielectric material of various thickness and cross section. This paper presents that we designed the analysis system of engine oil permittivity to know the relation between the engine oil deterioration and the prove dimension. Each of the dimension of capacitive prove is changed and then electric capacity is measured by LCR {Inductance(L), Capacitance (C), and Resistance (R)} meter. The engine oil permittivity has extracted in the prove measurement. As the additional research, this paper suggest the best of the prove dimension for the permittivity measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.969-975
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• 2002

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2000.11a
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• pp.251-256
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• 2000

The assessment of the condition of a transformer winding which is suspected of having suffered short circuit damage can be difficult. Conventional test such as winding resistance, magnetisation current or insulation resistance will only detect damage if a permanent electrical fault exists. Visual inspection of windings necessitates the removal of oil and in many cases only a very small proportion of the winding can be seen. We describe the characteristics. As the front rise time of recurrent-surge generator pulse less than 1000ns and the peak value of pulse is about 500V, we have the good results of detecting winding deformation in the LVI test of transformers.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.613-614
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• 2006

In this paper, BSIM4's IIR(Intrinsic Input Resistance) model that has a difficulty to predict $Z_{11}$ exactly is investigated by analyzing S-parameter measurement. Then a BSIM4 macro model for 70nm RF MOSFETs is proposed. That model uses external effective gate resistance which is composed of R and parallel RC. Comparison between simulation results using proposed model and IIR model is shown. The proposed model shows a better agreement between measured and simulated results up to 20GHz.

• 전기의세계
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• v.23 no.6
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Composites Research
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• v.24 no.1
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• pp.45-50
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• 2011

Transparent and conductive carbon nanotube on polyethylene terephthalate (PET) were prepared by dip-coating method for self-sensing multi-functional nanocomposites. The changes in the electrical and optical properties of CNT coating mainly depended on the number of dip-coating, concentration of CNT solution. Consequently, the surface resistance and transmittance of CNT coating were sensitively controlled by the processing parameters. Surface resistance of CNT coating was measured using four-point method, and surface resistance of coated CNT could be better calculated by using the dual configuration method. Optical transmittance of PET film with CNT coating was evaluated using UV spectrum. Surface properties of coated CNT investigated by wettability test via static and dynamic contact angle measurement were consistent with each other. As dip-coating number increased, surface resistance of coated CNT decreased seriously, whereas the transmittance exhibited little lower due to the thicker CNT networks layer. Interfacial microfailure properties were investigated for CNT and indium tin oxide (ITO) coatings on PET substrates by electrical resistance measurement under cyclic loading fatigue test. CNT with high aspect ratio exhibited no change in surface resistance up to 2000 cyclic loading, whereas ITO with brittle nature showed a linear increase of surface resistance up to 1000 cyclic loading and then exhibited the level-off due to reduced electrical contact points based on occurrence of many micro-cracks.