• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.427-430
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• 2002

This paper presents on contamination performance of polymeric outdoor insulator with different contaminant accumulation. The ESDD (equivalent salt deposit density), tracking resistance and clean-fog test were performed to investigate the characteristics of contamination performance on polymeric outdoor insulator. Furthermore, we evaluated together with the porcelain samples for its comparison. It is found that ESDD of polymeric and porcelain insulator depends on the installation position. This surface accumulation of contaminant lead to the loss of surface hydrophobicity, expecially upper shed part of polymeric insulator. In addition, the effect of an artificial contaminant on the tracking resistance by inclined-plane method and leakage suppression ability under clean fog was surveyed. The time of tracking failure did not appear to change significantly with a much contaminant accumulation, while leakage current under clean-fog increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1399-1401
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• 2001

We studied on structure and resistivity, temperature coefficient of resistance (TCR) of NiCr and NiCr-N thin resistor films prepared by do reactive magnetron sputtering of NiCr target. It is found that while pure NiCr films are polycrystalline, an addition of nitrogen (N2/(Ar+N2) ratios are between 10% and 70%) into the film is changed into amorphous structure and sheet resistance of films is increased. Measurement temperatures of TCR are ratios of $5^{\circ}C$ per 15min from $25^{\circ}C$ to $130^{\circ}C$. TCR for an as-deposited NiCr-N thin film is varied from positive to negative.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.522-525
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• 2004

ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

• 대한전기학회논문지:전력기술부문A
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• 제49권6호
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• pp.289-297
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• 2000

This paper presents a comparison on the resistance and characteristics of transient response of grounding systems under surge currents using frequency domain electromagnetic field analysis software package and field test. Analysis is done by computer model, based on electromagnetic field theory approach, that accurately takes into account frequency dependent characteristics of the system. The transient performance of three grounding systems is analyzed by comparison of frequency dependent impedance and the maximal transient GPR. A double exponential lighting surge current is injected at one corner of the grounding systems. The transient GPRs a rod grounding systems are higher than mesh or electrolytic grounding systems. Af field test, the results of resistance measurement and time-variant of ground resistance slightly reduce electorlytic grounding systems less than rod and mesh grounding systems.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1042-1045
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• 2004

ITO thin films ($\sim150nm$) are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AEM). The sheet resistance of ITO thin films compared $s_11$ values by using a near field scanning microwave microscope.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.21-24
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• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• 한국인터넷방송통신학회논문지
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• 제19권6호
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• pp.65-71
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• 2019

기존의 대지저항률과 접지저항 현장 측정 방식은 일정한 간격의 측정전극을 설치하여 전류를 인가하여 대지의 저항값에 따른 전압강하를 측정하게 되는데 현장 대지의 층상 구조가 특이성을 갖게 되면 역산 시 경계 조건의 오차를 발생하게 되고 접지 설계 시 중요한 대지저항률 분석이 시뮬레이션 상과 많은 차이를 보이게 된다. 본 연구는 정보통신 융합환경에서 아두이노 모듈과 스마트 접지 측정 기술를 활용하여 대지의 층상이 특이성을 갖는 구조라도 신뢰할 수 있는 스마트 대지 저항 측정장치를 개발하여 대지저항을 분석하고 데이터를 축적하여 대지의 경년변화를 예측한다. 현장의 지형적인 특성을 고려하여 접지저항과 대지저항 측정 시 각도와 거리를 정확하게 위치시켜 보조전극을 설치할 수 있는 접지저항 측정장치 및 측정방법을 제안한다. 정확한 접지저항 값을 선정할 수 있게 하기 위해 설치된 전극을 통해 접지저항 값뿐만 아니라, 대지저항률을 취득할 수 있어 유사지역에 전기시설물 설치 시에 유용한 자료로 활용할 수 있다. 또한 신뢰성 높은 데이터를 활용하고 현장의 대지구조를 분석하여 공사비용 뿐 아니라 접지설계에서 중요한 비중을 차지하는 대지에 대한 정밀한 분석으로 전위상승 등의 접지설비설계에서 많은 활용이 기대된다.

• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.126-129
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• 2021

We fabricated plate typed shunt resistors composed of carbon nanotube (CNT) and metal alloy for measuring DC current. CNT plates were prepared from dispersed CNT/Urethane solution by squeezing method. Cu/Ni alloys were prepared from composition-designed alloy wires for adjusting the temperature coefficient of resistance (TCR) by pressing them. As well, we fabricated a hybrid resistor by squeezing the CNT/Urethane solution on the metal alloy plate directly. In order to confirm the composition ratio of the Cu/Ni alloy, we used an energy-dispersed X-ray spectroscopy (EDX). Cross-section and surface morphology were analyzed by using a scanning electron microscopy (SEM). Finally, we measured the initial resistance of 2.35 Ω at 25℃ for the CNT paper resistor, 7.56 mΩ for the alloy resistor, and 7.38 mΩ for the hybrid resistor. The TCR was also measured to be -778.72 ppm/℃ at the temperature range between 25℃ to 125℃ for the CNT paper resistor, 824.06 ppm/℃ for the alloy resistor, and 17.61 ppm/℃ for the hybrid resistor. Some of the hybrid resistors showed a near-zero TCR of 1.38, -2.77, 2.66, and 5.49 ppm/℃, which might be the world best-value ever reported. Consequently, we could expect an error-free measurement of the DC current using this resistor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.64-66
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• 2002

This paper reports the design, modeling, fabrication and measurement of passive microvalves applicable to glaucoma implants. The proposed microvalves consisted of microchannels and chambers. The microchannels had a fixed fluidic resistance and generated a pressure difference. The chamber was located in the middle of the microchannels and acted as a buffer preventing an abrupt pressure change from an external variation of the fluid flow. To find optimum design parameters, six kinds of the microvalves were fabricated and experimented.