• Transactions of the Korean hydrogen and new energy society
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• v.23 no.6
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• pp.612-618
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• 2012

In this paper, in order to prevent electric shock of high voltage system of HFCV after crash test, insulation performance measurement methods were studied. Under conditions of in-use, insulation performance tests can be divided into measurement method using the vehicle's own RESS as DC voltage source and measurement method using DC voltage from off-vehicle sources. However, these tests can not be applied after a post-crash because parts of high voltage system cover should be removed, and insulation performance can be influenced during these tests. Therefore, we proposed post-crash insulation performance test methods for preventing electric shock through problem analysis of previous post-crash insulation performance tests. Also, test equipment which can measure voltage absence and total energy was developed. We verified performance of the equipment through experiments with vehicle test.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.8
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• pp.50-55
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• 2012

Grounding is very important for electrical safety. But it is very difficult to secure enough space for the installation and management of grounding in the city because of the congestion of the buildings. Therefore, to solve this problem, this paper suggest structure-grounding application taking advantage of building structure as protective grounding. And, to verify its feasibility, this paper shows the result to measure and analyze grounding-resistance of structure for 12 buildings mainly structed in the city.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.4
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• pp.386-390
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• 2005

Al film(135.5 nm thick) with Pd film(39.6 nm thick) on the top of it was made by thermal evaporation method. Electrical resistance change due to hydrogen absorption and desorption was measured by four point measurement method. The sample was activated by hydrogen absorption and desorption cycling at room temp. Hydrogen was introduced into the film by increasing hydrogen gas pressure step by step up to 640 torr at room temp. The resistance change ratio was decreased to 12 % with increasing hydrogen pressure in contrast to normal metal behavior. This strange tendency was not understood yet. Further study is needed to find out the mechanism of hydrogen absorption in Al in Al/Pd film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.299-302
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• 2000

RTD temperature sensor is a thermoresistor which uses the liner dependence of the resistance of the sensing material on the temperature, and has good stability and sensibility, so it can be used in highly precise temperature measurement. In this study RTD sensor was fabricated using Pt thin film. The Pt thin film was deposited on alumina using DC-Sputter, and annealed with various temperature. Through the experiments of XRD, AFM, 4-point probe, the surface structure of the thin film with annealing conditions and their effects on the electrical resistance were investigated. RTD with serpentine pattern was fabricated using Lift-off and resistance-temperature characteristics were studied.

• Geomechanics and Engineering
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• v.30 no.4
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• pp.337-343
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• 2022

The electrical resistivity method is a well-known geophysical method for observing underground conditions, (such as anomalies) and the properties of soil and rock (such as porosity, saturation, and pore fluid characteristics). The shape of electrodes used in an electrical resistivity survey depends on the purpose of the survey and installation conditions. Most electrodes for field applications are cylindrical for sufficient contact with the ground, while some are conically sharpened at their tips for convenient penetration. Previous study only derived theoretical equations for rod-shaped electrodes with spherical tips. In this study, the theoretical resistance for two cylindrical electrodes with conical tips is derived and verified experimentally. The influence of the penetration depth and tip on the measurement is also discussed.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1304-1305
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• 2011

In this study, tabbing cell samples in the soft touch method are compared samples according to soldering voltage conditions. Series resistance and power loss is measured by two measurement method. As a result, probe measurement method was found optimized soldering voltage optimized according to voltage condition and clamp measurement method was not difference. The purpose of this paper is to analysis the principle of measurement method.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.7
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• pp.1434-1437
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• 2011

Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.10a
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• pp.53-56
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• 2008

The full of potential method is generally used for measuring the earthing-resistance. This method needs two auxiliary electrodes and it is required that two auxiliary electrodes are placed at enough distances from the earthing electrode, e.g. building foundation. However, in urban area there is not enough space for taking measurement. So, it is very difficult to measure the earth resistance precisely. However, there is the 4- potential method when it stand on the theory of the full of potential method. It is the purpose of this paper to basic study on correction method of measured earthing resistance by 4-potential method.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1936-1938
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• 2005

$Al(OH)_3$ is added to the silicone rubber for improvement of its resistance against surface discharge. In this paper, four kinds of $Al(OH)_3$ were added to the SIR during compounding. SIR was deteriorated by a corona treatment. Hydrophobicity recovery rate after corona treatment and arc resistance of SIR were investigated. Hydrophobicity recovery rate of SIR was evaluated by the measurement of contact angle. Arc resistance was evaluated by measuring weight loss of SIR after arc resistance test.