• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1034-1046
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• 2013

In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary harmonic impedances is presented. The adopted GaN HEMT device, TGF2023-02 of TriQuint Semiconductor, was packaged in commercial package. The optimal impedances of the GaN HEMT package are extracted from load-pull simulation at package input and output reference planes. The targets of load-pull simulation are the highest output power at fundamental frequency and the highest efficiency at $2^{nd}$ and $3^{rd}$ harmonic frequencies. Because of fixture in the package, the extracted impedances shows arbitrary harmonic impedances. In order to match the optimal impedances, output matchin circuit which has 4 transmission lines is presented. Characteristic impedances and electrical lengths of the transmission lines are mathmatically calculated. The power amplfiier with $54.6{\times}40mm^2$ shows the output power of 8 W at the fundamental frequency of 2.5 GHz, the efficiency above 55 %, and harmonic suppression of above 35 dBc at the $2^{nd}$ and the $3^{rd}$ harmonics.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• The Korean Journal of Food And Nutrition
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• v.25 no.4
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• pp.1068-1074
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• 2012

Ohmic heating uses electric resistance heat which occurs equally and rapidly inside of food when electrical current is flown into. In other study, we researched about soybean protein's characteristic changes by ohmic heating. Nevertheless treated same temperature, denaturation of soybean protein were accelerated by ohmic heating than conventional heating. In this time, we studied thermal property change of potato starch by ohmic heating besides conventional heating. For this purpose, potato starch was heated at same subgelatinization temperature by ohmic and conventional heating. And thermal properties were tested using DSC. Annealing of starch is heat treatment method that heated at 3~4% below the gelatinization point. DSC analysis results of this study, the $T_o$, $T_p$, $T_c$ of potato starch levels were increased, whereas $T_c{\sim}T_o$ was narrowed. This thermal property changes appear similar to annealing's result. It is thought the results shown in this study, because the heating from below the gelatinization point. 6, 12, 24, 72, and 120 hours heating at $55^{\circ}C$ for potato starch, $T_o$, $T_p$, $T_c$ values continue to increased with heating time increase. The gelatinization temperature of raw potato starch was $65.9^{\circ}C$ and the treated starch by conventional heating at $55^{\circ}C$ for 120 hr was $72^{\circ}C$, ohmic was $76^{\circ}C$. The gelatinization range of conventional (72 hr) was $10^{\circ}C$, ohmic was $8^{\circ}C$. In case of 24 hours heating at 45, 50, 55, 60, $65^{\circ}C$ for potato starch, the result was similar to before. $T_o$, $T_p$, $T_c$ values continue to increased and gelatinization range narrowed with heating temperature increase. In case of conventional heating at $60^{\circ}C$, the results of gelatinization temperature and range were $70.1^{\circ}C$ and $9.1^{\circ}C$. And ohmic were $74.4^{\circ}C$ and $7.5^{\circ}C$. When viewed through the results of the above, the internal structure of starch heated by ohmic heating was found that the shift to a more stable form and to increase the homology of the starch internal structure.

• Korean Journal of Food Science and Technology
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• v.26 no.6
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• pp.791-798
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• 1994

Ohmic heating is a food processing operation in which heat is internally generated within foods by the passage of alternating electric current. The process enables highly viscous paste foods such as Kochujang, and fermented soybean paste to be heated very fast. In order to develope the novel pasteurization process of paste foods, static Ohmic heating system was built, and heating characteristic during Ohmic heating under various conditions were studied. Electric conductivities of Kochujang and fermented soybean paste at room temperature were 1.865 S/m and 2.510 S/m, respectively and increased linearly with increasing temperature. Specific heating rate was highly dependent on the frequency. The highest heating rate was achieved at 5 KHz for Kochujang and 20 KHz for fermented soybean paste. Uniform heating throughout the sample was achieved during Ohmic heating with low frequency electrical currents, however above 5 KHz frequency, surface temperature was several degrees higher than the bulk.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.5
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• pp.981-986
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• 2020

The Internet of Things refers to a space-of-things connection network configured to allow things with built-in sensors and communication functions to interact with people and other things, regardless of the restriction of place or time.IoT is a network developed for the purpose of services for human convenience, but the scope of its use is expanding across industries such as power transmission, energy management, and factory automation. However, the communication protocol of IoT, MQTT, is a lightweight message transmission protocol based on the push technology and has a security vulnerability, and this suggests that there are risks such as personal information infringement or industrial information leakage. To solve this problem, we designed a synchronous MQTT security channel that creates a secure channel by using the characteristic that different chaotic dynamical systems are synchronized with arbitrary values in the lightweight message transmission MQTT protocol. The communication channel we designed is a method of transmitting information to the noise channel by using characteristics such as random number similarity of chaotic signals, sensitivity to initial value, and reproducibility of signals. The encryption method synchronized with the proposed key value is a method optimized for the lightweight message transmission protocol, and if applied to the MQTT of IoT, it is believed to be effective in creating a secure channel.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2899-2904
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• 2015

This paper introduces about the effect on $I_{DS}-V_{GS}$ characteristic of transistor that interface trap charge is created by damage due to heat in a 3D sequential inverter. A interface trap charge distribution in oxide layer in a 3D sequential inverter is extracted using two-dimensional device simulator. The variation of threshold voltage of top transistor according to the gate voltage variation of bottom transistor is also described in terms of Inter Layer Dielectric (ILD) length of 3D sequential inverter, considering the extracted interface trap charge distribution. The extracted interface trap density distribution shows that the bottom $HfO_2$ layer and both the bottom and top $SiO_2$ layer were relatively more affected by heat than the top $HfO_2$ layer with latest process. The threshold voltage variations of the shorter length of ILD in 3D sequential inverter under 50nm is higher than those over 50nm. The $V_{th}$ variation considering the interface trap charge distribution changes less than that excluding it.

• Journal of the Korean Institute of Gas
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• v.22 no.4
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• pp.27-31
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• 2018

Classification of explosion hazard areas is very important in terms of cost and safety in the workplace handling flammable materials. This is because the radius of the hazardous area determines whether or not the explosion-proof equipment is installed in the electrical machinery and apparatus. From November 6, 2017, KS C IEC-60079-10-1: 2015 will be issued and applied as a new standard. It is important to understand and apply the difference between the existing standard and the new standard. Leakage coefficients and compression factors were added to the leakage calculation formula, and the formula of evaporation pool leakage, application of leakage ball size, and shape of explosion hazard area were applied. The range of the safety factor K has also been changed. Also, in the radius of the hazardous area, the existing standard applies the number of ventilation to the virtual volume, but the revised standard is calculated by using the leakage characteristic value. In this study, we investigated the differences from existing standards in terms of ventilation and dilution and examined the effect on the radius of the hazard area. Comparisons and analyzes were carried out by applying revised standards to workplaces where existing explosion hazard locations were selected. The results showed that even if the ventilation and dilution were successful, the risk radius was not substantially affected.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2739-2746
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• 2011

This paper proposes the method for more effectively calculating X/R which is the ratio of equivalent reactance(X) and resistance(R) of the bulk power system and analyses the characteristic of X/R values by applying the proposed method to the real bulk power systems. X/R is used to determine the rating of the relay in the bulk power systems and its value has been accepted to be big enough to ignore the equivalent resistance of the bulk power systems. However, X/R is calculated as a big number when only the upper transformer and transmission line are considered. The correct approach to calculating X/R needs to consider all the parameters including generators, transformers, lines and loads. This paper calculates X/R of the bulk power systems using dynamic models which have been used to analyse the power system stability. The effectiveness of the proposed method is verified by applying it to the test system and X/R values of the real bulk power systems are analyzed. In addition, the dependence of X/R on the closeness of its calculating locations to the generator is verified by using the marginal loss factor which has been used in the electricity market.

• Composites Research
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• v.26 no.5
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• pp.289-294
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• 2013

A thinner is used to improve the multi-walled carbon nano-tube (CNT) and carbon black (CB) dispersion in a polymer matrix and to make a soft electrode. The electrical and mechanical properties of the soft electrodes are investigated as functions of CNT, CB and thinner content. The optimal mixing condition for the electrode is thinner 80, CNT 3.5, CB 18 (phr) on the basis of matrix (KE-12). The specific resistance of that is 73 (${\Omega}{\cdot}cm$), and tensile strength, tensile modulus, and elongation of that is 0.45 MPa, 0.21 MPa, and 184%, respectively. Also, a simple structure of the actuator with an optimized electrode and elastomer is fabricated and its characteristic is evaluated. At the operating voltage 25 kV, the displacement of an elastomer KE-12 is 2.24 mm, and that of an elastomer KE-12 with thinner 50 (phr) is 4.05 mm. It shows a higher displacement compared to that of 3M 4910 which has similar modulus. The actuator made with elastomer and electrode of the same material (KE-12) may have advantages for fatigue life and application.

• Journal of the Korea Society of Computer and Information
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• v.17 no.1
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• pp.211-218
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• 2012

Fossil fuel is used all over the world and it produces greenhouse gases due to fossil fuel use. Therefore, it cause global warming and is serious environmental pollution. In order to decrease the environmental pollution, we should use renewable energy which is clean energy. Among several renewable energy, wind energy is the most promising one. Wind power generation is does not produce environmental pollution and could not be exhausted. However, due to wind power generation has irregular power output, it is important to predict generated electrical energy accurately for smoothing wind energy supply. There, we consider use ramp characteristic to forecast accurate wind power output. The ramp increase and decrease rapidly wind power generation during in a short time. Therefore, it can cause problem of unbalanced power supply and demand and get damaged wind turbine. In this paper, we make prediction models using power ramp rate as well as wind speed and wind direction to increase prediction accuracy. Prediction model construction algorithm used multilayer neural network. We built four prediction models with PRR, wind speed, and wind direction and then evaluated performance of prediction models. The predicted values, which is prediction model with all of attribute, is nearly to the observed values. Therefore, if we use PRR attribute, we can increase prediction accuracy of wind power generation.