• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.176-179
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• 2003

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with $8{\times}10^{-3}\;{\Omega}-cm$ of resistivity and 80% of transmittance at optimal conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.196.1-196.1
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• 2016

TCO(Transparent Conducting Oxide) on flat glass is used in thin-film photovoltaic cell, flat-panel display. Nowadays, Corning(R) Willow Glass(R), known as flexible substrate, has attracted much attention due to its many advantages such as reliable roll-to-roll glass processing, high-quality flexible electronic devices, high temperature process. Also, it can be an alternative to flexible polymer substrates which have their poor stability and degradation of electrical and optical qualities. For application on willow glass, the flexibility, electrical, optical properties can be greatly influenced by the TCO thin film thickness due to the inherent characterization of thin film in nanoscale. It can be expected that while thick TCO layer causes poor transparency, its sheet resistance become low. Also, rarely reports were focusing on the influence of flexible properties by varying TCO thickness on flexible glass. Therefore, it is very important to optimize TCO thickness on flexible Willow glass. In this study, Ti-ZnO thin films, with different thickness varied from 0 nm to 50 nm, were deposited on the flexible willow glass by atomic layer deposition (ALD). The flexible, electrical and optical properties were investigated, respectively. Also, these properties of Ti-doped ZnO thin films were compared with un-doped ZnO thin film. Based on the results, when Ti-ZnO thin films thickness increased, resistivity decreased and then saturated; transmittance decreased. The Figure of Merit (FoM) and flexibility was the highest when Ti-ZnO thickness was 40nm. The flexible, electrical and optical properties of Ti-ZnO thin films were better than ZnO thin film at the same thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.699-700
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• 2013

Aluminum and hydrogen doped zinc oxide (AZHO) films were prepared by r.f. magnetron sputtering. The structural, electrical, and optical properties of the AHZO films were investigated in terms of the annealing conditions to study the thermal stability. The XRD measurements revealed that the degree of c-axis orientation was decreased and the crystallintiy of the films was deteriorated by the heat treatment. The electrical resistivity was significantly increased when the films were annealed at higher temperature. Although the optical transmittance of AHZO films didn't highly changed by heat treatment, the optical band gap was reduced, regardless of annealing temperature and duration. The thermal stability of AHZO films was worse compared to AZO films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.32-36
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• 2022

AGZO thin films were deposited on glass substrates using RF magnetron sputtering system under Ar flow rates, and their structural, electrical, and optical properties were analyzed systematically. As a result of the XRD pattern, the peak of the (002) (2θ≈33.7˚) orientation was observed, and it was found to have a hexagonal wurtzite structure. The sheet resistance of Ar 5 sccm was 3.073×10² Ω/sq and showed the best electrical properties because of the improvement of mobility due to the increase of the grain size and the variation of RMS roughness. In addition, the average transmittance was more than 90% for all samples, which demonstrated good optical properties. It is expected that the TCO characteristics can be improved by controlling Ar flow rates, and this will increase the efficiency of photoelectronic devices such as OLED and solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.932-938
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• 2007

The structural, optical, and electrical properties of ZnO thin films grown on glass by radio-frequency (rf) magnetron sputtering were investigated. The mixture flow ratio of $O_2$ to Ar, which was operated with sputtering gas, was chosen as a parameter for growing high-qualify ZnO thin films. The structural properties and surface morphologies of the thin films were characterized by the X-ray diffraction and the atomic force microscope, respectively. As for the optical properties of the films, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of ZnO thin films were calculated from the measured data. The crystallinity of the films was improved and the bandgap energy was increased from 3.08 eV to 3.23 eV as the oxygen flow ratio was increased from 0 % to 50 %. Furthermore, The ultraviolet and violet luminescences were observed by using photoluminescence spectroscopy. The hall mobility was decreased with the increase of oxygen flow ratio.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.145-149
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• 2017

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.198-200
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• 2014

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.346-346
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• 2012

We investigated electrical and optical properties and chemical states of amorphous In-Ga-Zn-O (a-IGZO) thin films deposited at different substrate temperatures (from room temperature to $300^{\circ}C$). a-IGZO thin films were fabricated by radio frequency magnetron sputtering using $In_2O_3$ : $Ga_2O_3$ : ZnO = 1 : 1 : 1 target, and their electrical and optical properties and chemical states were investigated by Hall-measurement, UV-visible spectroscopy and x-ray photoelectron spectroscopy (XPS), respectively. The data showed that as substrate temperature increased, carrier concentration increased, but mobility, conductivity, transmittance in the shorter wavelength region (>350 nm), and the Tauc-plot-estimated optical bandgap decreased. XPS data indicated that the intensity of In 3d peak compared to Ga 3d peak increased but the intensity of Zn 3d peak compared to Ga 3d decreased, and that, from the deconvoluted O 1s peak, defects or oxygen vacancies and non-quaternary contents increased as the temperature increased. The relative intensity changes of the In, Zn, and O 1s sub-component are suggested to explain the changes in electrical and optical properties.