• Electrical & Electronic Materials
• /
• v.9 no.4
• /
• pp.404-409
• /
• 1996

The structural and electric properties of $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$(x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) have been investigated by using XRD(X-ray diffraction), TMA(thennomechanical analysis), NMR(nuclear magnetic resonance) analysis and four probe method. $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$ samples were prepared by conventional solid-state reaction method using $Y_{2}$O$_{3}$, BaCO$_{3}$, CuO and YbF$_{3}$ power. TMA and high temperature XRD results shows that orthorhombic to tetragonal phase transition occurs in the unfluorinated 1-2-3 sample while the phase change is not observed in the fluorinated 1-2-3 samples. Superconducting transition temperature(T$_{c}$) increases with increasing YbF$_{3}$ content ; T$_{c}$, of the sample reaching maximum of 102K for x=0.3, and then decreases with further increasing YbF$_{3}$ content. The structural analysis and T$_{c}$ results shows that the fluorine doping stabilize the orthorhombic phase, together with the increase in T$_{c}$.}$ c/.TEX> c/.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05c
• /
• pp.189-192
• /
• 2001

In this paper, an novel optical measuring system based on the electro-optic effect has been proposed and realized using Pockels cell with a view to detecting partial discharge taking place at the needle plane electrode. This system has the following advantages ; nonmetallic probe sensor, immune to external EMI noise and broad band response of the Pockels cell from DC to GHz. This system is constructed by He-Ne laser, Mach-Zehnder interferometer with Pockels sensor, balanced photo receiver, data acquisition board and PC. The response characteristics of the developed proto type sensor are examined for AC and corona discharge.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.470-470
• /
• 2010

Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

• Korean Journal of Materials Research
• /
• v.26 no.4
• /
• pp.207-211
• /
• 2016

Ti films were deposited on glass substrates under various preparation conditions in a chamber of two-facing-target type dc sputtering; after deposition, the electric resistivity values were measured using a conventional four-probe method. Crystallographic orientations and microstructures, including the texture and columnar structure, were also investigated for the Ti films. The morphological features, including the columnar structures and surface roughness, are well explained on the basis of Thornton's zone model. The electric resistivity and the thermal coefficient of the resistivity vary with the sputtering gas pressure. The minimum value of resistivity was around 0.4 Pa for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films; the apparent tendencies are almost the same for the two films, with a small difference in resistivity because of the different film thicknesses. The films deposited at high gas pressures show higher resistivities. The maximum of TCR is also around 0.4 Pa, which is the same as that obtained from the relationship between the resistivity and the gas pressure. The lattice spacing also decreases with increasing sputtering gas pressure for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films. Because they are strongly related to the sputtering gas pressures for Ti films that have a crystallographic anisotropy that is different from cubic symmetry, these changes are well explained on the basis of the film microstructures. It is shown that resistivity measurement can serve as a promising monitor for microstructures in sputtered Ti films.

• Composites Research
• /
• v.34 no.6
• /
• pp.387-393
• /
• 2021

This paper investigated the electrical properties of multiwall carbon nanotube reinforced polydimethylsiloxane (CNT-PDMS) strain sensors with copper electrodes on the wet-etched surface. MWCNT-PDMS strain sensors were fabricated according to the wt% of MWCNT. Surfaces on the electrode area were wet-etched with various etching duration and silver epoxy adhesives were spread on the wet-etched surface. Finally, we attached the copper electrodes to the MWCNT-PMDS strain sensors. We checked the electric conductivities by the two-probe method and sensing characteristics under the cyclic loading. We observed the electric conductivity of MWCNT-PDMS strain sensors increased sharply and the scattering of the measured data decreased when the surface of the electrode area was wet-etched. Initial resistances of MWCNT-PDMS strain sensors were inversely proportion to wt% of MWCNT and the etching duration. However, the resistance changing rates under 30% strain increased as wt% of MWCNT and the etching duration increased. Decreasing rate of the electric resistance change after 100 repetitions was smaller when wt% of MWCNT was larger and the etching duration was short. This was due to the low initial resistance of the MWCNT-PMDS strain sensors by the wet-etching.

• Archives of Metallurgy and Materials
• /
• v.67 no.4
• /
• pp.1469-1473
• /
• 2022

Tungsten diselenide (WSe₂) is one of the promising transition metal dichalcogenides (TMDs) for nanoelectronics and optoelectronics. To enhance and tune the electronic performance of TMDs, chemical functionalization via covalent and van der Waals approaches has been suggested. In the present report, the electric and structural transition of WSe₂ oxidized by exposure to O₃ is investigated using scanning tunneling microscopy. It is demonstrated that the exposure of WSe₂/high-ordered pyrolytic graphite sample to O₃ induces the formation of molecular adsorbates on the surface, which enables to increase in the density of states near the valence band edge, resulting from electric structural modification of domain boundaries via exposure of atomic O. According to the work function extracted by Kelvin probe force microscopy, monolayer WSe₂ with the O₃ exposure results in a gradual increase in work function as the exposure to O₃. Therefore, the present report demonstrates the potential pathway for the chemical functionalization of TMDs to enhance the electric performance of TMDs devices.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1806-1808
• /
• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si substrate, deposited by r.f magnetron sputtering. It were analyzed with annealing condition($1000^{\circ}C$ for 120 min) by four point probe, a-step, SEM and XRD. Until $1000^{\circ}C$ of annealing temperature, MgO medium layer had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had $3927ppm/^{\circ}C$ and liner in the temperature range of room temperature ${\sim}400^{\circ}C$.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2005.11a
• /
• pp.443-447
• /
• 2005

The SAR measurement system with stationary probes, presented in this paper, can calculate area SAR value based ell the measured 9 electric field data. By converting obtained area SAR to the volume SAR, the results can be acquired in a few seconds. The system can be very useful tool in the stages of handset development for mobile communication as well as in the handset production line because of its rapid SAR measurement. The system showed good linearity characteristics at 835 MHz of 10 $\sim$ 27 dBm input power range.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.1
• /
• pp.82-87
• /
• 2010

A measurement system of contact force between overhead contact line and pantograph of train is developed which measures the contact force by using four sets of full-bridge strain gauges instead of load cells and accelerometers. The sensors are installed on the pan head of pantograph and the measured data from the sensors are transmitted to a server system in the train by way of wireless Lan. This configuration of the measuring system makes it easy to install on the trains without any alteration of train system. The measurement system is applied to KTX on the Kyungbu high speed line, and the measured contact force data shows good agreement with those measured by load cell and accelerometers. The waveform of the contact force between overhead contact line and pantograph contains essential information about their conditions. The proposed measurement system can probe any defects on overhead contact lines with train running at high speed, which will be a powerful solution for the maintenance of long-distance overhead contact lines.

• Transactions of Materials Processing
• /
• v.27 no.4
• /
• pp.244-249
• /
• 2018

Rhodium is a representative platinum group material. Rhodium is used in several industrial fields including jewelry, chemical reaction catalyst, electric component etc. In recently, ultra-fine rhodium wire has been applied to the pins of probe card used to test a semiconductor. In this study, in order to produce a fine rhodium wire with the diameter of $50{\mu}m$, a fine rhodium wire drawing process was designed. After design of the fine wire drawing process by using a uniform reduction ratio theory, finite element analysis was performed. Finally, fine wire drawing experiment was performed to verify the effectiveness of the designed process.