Archives of Metallurgy and Materials

Institute of Metallurgy and Materials Science of Polish Academy of Sciences
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Structural Deformation of Tungsten Diselenide Nanostructures Induced by Ozone Oxidation and Investigation of Electronic Properties Change

  • Eunjeong Kim (Gyeongsang National University, Department of Materials Engineering and Convergence Technology) ;
  • Sangyoeb Lee (Hanbat National University, Department of Materials Science and Engineering and Department of Materials and Manufacturing Engineering) ;
  • Yeonjin Je (Gyeongsang National University, School of Materials Science and Engineering) ;
  • Dong Park Lee (Gyeongsang National University, School of Materials Science and Engineering) ;
  • Sang Jun Park (Gyeongsang National University, School of Materials Science and Engineering) ;
  • Sanghyun Jeong (Hanbat National University, Department of Materials Science and Engineering and Department of Materials and Manufacturing Engineering) ;
  • Joon Sik Park (Hanbat National University, Department of Materials Science and Engineering and Department of Materials and Manufacturing Engineering) ;
  • Byungmin Ahn (Ajou University, Department of Materials Science and Engineering and Department of Energy Systems Research) ;
  • Jun Hong Park (Gyeongsang National University, Department of Materials Engineering and Convergence Technology)
  • Published : 20220000
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Abstract

Tungsten diselenide (WSe2) is one of the promising transition metal dichalcogenides (TMDs) for nanoelectronics and optoelectronics. To enhance and tune the electronic performance of TMDs, chemical functionalization via covalent and van der Waals approaches has been suggested. In the present report, the electric and structural transition of WSe2 oxidized by exposure to O3 is investigated using scanning tunneling microscopy. It is demonstrated that the exposure of WSe2/high-ordered pyrolytic graphite sample to O3 induces the formation of molecular adsorbates on the surface, which enables to increase in the density of states near the valence band edge, resulting from electric structural modification of domain boundaries via exposure of atomic O. According to the work function extracted by Kelvin probe force microscopy, monolayer WSe2 with the O3 exposure results in a gradual increase in work function as the exposure to O3. Therefore, the present report demonstrates the potential pathway for the chemical functionalization of TMDs to enhance the electric performance of TMDs devices.

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Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2021R1C1C1012209 and 2020R1A4A4079397).