• International Journal of Precision Engineering and Manufacturing
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• v.9 no.4
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• pp.74-78
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• 2008

High-speed tool steels are extensively used in tooling industries for manufacturing cutting tools, forming tools, and rolls. Electrical discharge machining (EDM) has been found to be an effective process for machining these extremely hard and difficult-to-cut materials. Extensive research has been conducted to identify the optimum machining parameters for EDM with different tool steels. This paper presents a fundamental study of the surface characteristics of SKH-51 tool steel machined by micro-EDM, with particular focus on obtaining a better surface finish. An RC pulse generator was used to obtain a better surface finish as it produces fine discharge craters. The main operating parameters studied were the gap voltage and the capacitance while the resistance and other gap control parameters were kept constant. A negative tungsten electrode was used in this study. The micro-EDM performance was analyzed by atomic force microscopy to determine the average surface roughness and the distance between the highest peak and lowest valley. The topography of the machined surface was observed using a scanning electron microscope and a digital optical microscope.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.119-120
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• 2006

The impedance spectroscopy is one of the effective ways to understand the electrical properties of organic light emitting diodes. The frequency-dependant properties of small molecule based OLEDs have been studied. The equivalent circuit of single-layer device is composed of contact resistance ($R_c$), bulk resistance ($R_p$) and bulk capacitance ($C_p$). The equivalent circuit of double layer device is composed of two parallel circuits connected in series, each of which is a parallel resistor and a capacitor. We have fabricated a double layer device indium-rio-oxide (ITO, anode), N,NV -diphenyl- N,NV -bis(3-methylphenyI)-1,1V -diphenyl-4,4V-diamine (TPD, hole-transporting layer), tris-(8-hydroxyquinoline) aluminum (Alq3, emitting layer), and aluminum (AI, cathode) and two single layer devices ([TO/ Alq3/ AI, ITO/TPD/AI).

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.131-134
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• 2011

Back-end-of-line using ultra low-k (ULK; k < 2.5) has been required to reduce resistive capacitance beyond 45 nmtechnologies, because micro-processing units need higher speed and density. There are two strategies to manufacture ULK inter-layer dielectric (ILD) materials using an air-gap (k = 1). The former ULK and calcinations of ILD degrade the mechanical strength and induce a high cost due to the complication of following process, such as chemical mechanical polishing and deposition of the barrier metal. In contrast, the air-gap based low-k ILD with a relatively higher density has been researched on the trench-type with activity, but it has limited application to high density devices due to its high air-gap into the next metal layer. The height of air-gap into the next metal layer was reduced by changing to the via-typed air-gap, up to about 50% compared to that of the trench-typed air-gap. The controllable ULK was easily fabricated using the via-typed air-gap. It is thought that the via-type air-gap made the better design margin like via-patterning in the area with the dense and narrow lines.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.110-113
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• 2008

Embedded capacitor technology is one of the effective packing technologies for further miniaturization and higher performance of electric packaging system. In this paper, the embedded capacitors were simulated and fabricated in 8-layered printed circuit board employing standard PCB processes. The composites of barium titanante($BaTiO_3$) powder and epoxy resin were employed for the dielectric materials in embedded capacitors. Theoretical considerations regarding the embedded capacitors have been paid to understand the frequency dependent impedance behavior. Frequency dependent impedance of simulated and fabricated embedded capacitors was investigated. Fabricated embedded capacitors have lower self resonance frequency values than that of the simulated embedded capacitors due to the increased parasitic inductance values. Frequency dependent capacitances of fabricated embedded capacitors were well matched with those of simulated embedded capacitors from the 100MHz to 10GHz range. Quality factor of 20 was observed and simulated at 2GHz range in the 10 pF embedded capacitors. Temperature dependent capacitance of fabricated embedded capacitors was presented.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.51-57
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• 2013

The current expanding mobile markets incessantly demands small form factor, low power consumption and high aggregate throughput for silicon-level integration such as memory to logic system. One of emerging solution for meeting this high market demand is 3D through silicon stacking (TSS) technology. Main challenges to bring 3D TSS technology to the volume production level are establishing a cost effective supply chain and building a reliable manufacturing processes. In addition, this technology inherently help increase number of IOs and shorten interconnect length. With those benefits, however, potential signal and power integrity risks are also elevated; increase in PDN inductance, channel loss on substrate, crosstalk and parasitic capacitance. This paper will report recent progress of wide IO memory to high count TSV logic device assembly development work. 28 nm node TSV test vehicles were fabricated by the foundry and assembled. Successful integration of memory wide IO chip with less than a millimeter package thickness form factor was achieved. For this successful integration, we discussed potential signal and power integrity challenges. This report demonstrated functional wide IO memory to 28 nm logic device assembly using 3D package architecture with such a thin form factor.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.893-898
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• 2014

Recently, the interior permanent synchronous motor (IPMSM) has been applied to an integrated starter and generator (ISG) for hybrid electric vehicles. In the design of such a motor, thermal analysis is necessary to maximize the power density because the loss is proportional to the power of a motor. Therefore, a cooling device as a heat sink is required internally. Generally, a cooling system designed with a water jacket structure is widely used for electric motors because it has advantages of simple structure and cooling effectiveness. An effective approach to analyze an electric machine with a water jacket is a thermal equivalent network. This network is composed of thermal resistance, a heat source, and thermal capacitance that consider the conduction, convection, and radiation. In particular, modeling of the cooling channel in a network is challenging owing to the flow of the coolant. In this paper, temperature prediction using a thermal equivalent network is performed in an ISG that has a water cooled system. Then, an experiment is conducted to verify the thermal equivalent network.

• Journal of Electrical Engineering and Technology
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• v.13 no.3
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• pp.1346-1354
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• 2018

Quality of the power system depends upon the reliability of its components such as transformer, transmission lines, insulators, circuit breakers and isolators. The transient voltage due to internal or external reasons may affect the insulation level of the components. The insulation level of these components must be tested against these conditions. Different studies, testing of different electrical components against high voltage impulses and different industrial applications rely on the international manufactures for pulsed power generation and testing, that is quite expensive and large in size. In this paper a model of impulse voltage generator with capacitive load of pin type insulator is studied by simulation method and by an experimental setup. A ten stage high voltage impulse generator (HVIG) is designed and implemented for different applications. In this proposed model, the cost has been reduced by using small and cheap capacitors as an alternative for large and expensive ones while achieving the same effectiveness. Effect of the distributed capacitance in each stage is analyzed to prove the effectiveness of the model. Different values of front and tail resistances have been used to get IEC standard waveforms. Results reveal the effectiveness at reduced cost of the proposed model.

• Tribology and Lubricants
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• v.37 no.2
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• pp.41-47
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• 2021

An experimental device was developed for analysis of hydraulic oil characteristics with dielectric constant sensors. Online analysis is the most effective method of the three methods used for analyzing lubricant oils. This is because it can monitor the machine condition effectively using oil sensors in real time without requiring excellent analysis skill and eliminates human errors. Determining the oil quality usually requires complex laboratory equipment for measuring factors such as density, viscosity, base number, acid number, water content, additive, and wear debris. However, the electric constant is another indicator of oil quality that can be measured on-site. The electric constant is the ratio of the capacitance of a capacitor using that material as a dielectric, compared with a similar capacitor that has a vacuum as its dielectric. The electric constant affects the factors such as the base oil, additive, temperature, electric field frequency, water content, and contaminants. In this study, the tendency of the electric constant is investigated with a variation of temperature, water content, and dust weight. The experimental device can control working temperature and mix the contaminants with oil. A machine condition monitoring program developed to analyze hydraulic oil is described. This program provides graph and digital values with variation of time. Moreover, it includes an alarm system for when the oil condition is bad.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Journal of Advanced Marine Engineering and Technology
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• v.41 no.1
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• pp.70-75
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• 2017

In this paper, we studied the RF characteristics of a voltage-controlled artificial transmission line employing periodically arrayed diodes for application to highly miniaturized wireless communication systems on an MMIC (monolithic microwave integrated circuit). According to the results, the novel voltage-controlled artificial transmission line employing periodically arrayed diodes exhibited a short wave length, which was only 35.2% that of the conventional transmission line, owing to increasing capacitance. In addition, it's effective permittivity and effective propagation constant exhibited considerably higher values than those of the conventional transmission line. Furthermore, attenuation constant of the voltage-controlled artificial transmission line was far higher than that of the conventional transmission line. Using the closed-form equation, we theoretically analyzed the equivalent circuit of the voltage-controlled artificial transmission line.