• Korean Journal of Materials Research
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• v.17 no.8
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• pp.420-424
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• 2007

Precipitation behavior has been studied in NiTi-based ordered alloy using transmission electron microscopy. The hardness after solution treatment is high in NiTi alloy suggesting the large contribution of solid solution strengthening in this alloy system. However, the amount of age hardening is not large as compared to the large microstructural variations during aging. At the beginning of aging, the $L2_1-type$ $Ni_2AlTi$ precipitates keep a lattice coherency with the NiTi matrix. By longer periods of aging $Ni_2AlTi$ precipitates lose their coherency and change their morphology to the globular ones surrounded by misfit dislocations. Misfit dislocations, which are observed on {100} planes of H-precipitates have the Burgers vector of a <100> with a pure edge type. The lattice misfits of $NiTi-Ni_2AlTi$ system is estimated from the spacings of misfit dislocations to be 1.3% at 1273 K. The lattice misfits decrease with increasing aging temperature in this system.

• Applied Microscopy
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• v.24 no.3
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• pp.78-86
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• 1994

A TEM study on proeutectoid ${\alpha}$ reaction at sub-eutectoid temperatures has been made in hypoeutectoid Ti-3.gw/o Co and Ti-5.2w/o Fe alloys. Widmanstatten ${\alpha}$ plates were formed in both alloys within the ${\beta}$ matrix with some modification of degenerate forms. These degenerate plates were formed by the sympathetic nucleation of ${\alpha}$ plates at ${\alpha}:{\beta}$ interphase boundaries. Three types of sympathetic nucleation, i.e., edge-to-edge, face-to-edge, face-to-face, were found in both alloys. The edge-to-edge sympathetically nucleated crystals formed a low-angle boundary between two crystals. The ${\alpha}:{\beta}$ interphase boundaries were found to be partially coherent interfaces which consist of regularly spaced misfit dislocations. The growth of these interphase boundaries were accomplished by the lateral movement of growth ledges. The intersection points of two ${\alpha}$ plates or the low angle boundaries which had formed by edge-to-edge sympathetic nucleation played a role as the potential sources of growth ledges during the growth of plate. The interfacial structures and the spatial morphologies of the degenerate proeutectoid ${\alpha}$ plates would be expected to influence the nucleation and growth of the succeeding eutectoid decomposition process.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.579-585
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• 2019

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of ($10{\bar{1}}5$) X-ray rocking curves (XRCs) change from 0.22 to $0.31^{\circ}$ with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to $0.45^{\circ}$ with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the ($10{\bar{1}}5$) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and ($10{\bar{1}}5$) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.4
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• pp.201-208
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• 1992

An experimental study of the constitutive response of precipitation-strengthened Al-0.55wt% Zr alloy, which consists of an Al matrix precipitation-strengthened by coherent particles, ${\beta}^{\prime}(Al_3Zr)$ with $L1_2$ structure has been performed. The deformation response of the materials has been examined by stress relaxation test at 573K, 623K and 673K. It was found that there exist the threshold stress during stress relaxation and threshold stress results from the presense of ${\beta}^{\prime}(Al_3Zr)$ particles. The ratio of threshold stress and Orowan stress decreased gradually with increasing temperature. The resistance to climb-pass of particles was independent of particles size for a fixed volume fraction although the threshold for bowing and particles cutting are sensitive to the particles dimensions. The smaller particles cutted by dislocations. This behavior of dislocations in this alloy was explained in terms of the small value antiphase boundary energy. The dislocation networks wrere more extensive in spesimens subjected to stress relaxation and there were numerous areas that have a high denstiy of jogged dislocation. This experiment results indicate that the rate controlling stress relaxation process is the climb of edge dislocation over particles.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.861-868
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• 2017

Near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near bandgap infrared transmission, is both rapid and non-destructive. Until now no quantitative analysis has been reported for near band edge region which gives the reverse contrast on EL2 absorption images. This paper presents the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band edge domain for cells and walls and for direct and inverted contrast conditions during transitory regimes. The difference in the threshold for the EL2w and EL2b defects could be attributed to the contribution of a different electrical assistance due to a different species of impurities. Quantitative analysis results show an increased density of EL2w and a small reduction of EL2b in the region of the walls where there is a high density of dislocations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.6
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• pp.261-264
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• 2012

In this paper, we investigated characteristics of etching induced surface morphology variation by wet etching of GaN epilayer were grown on sapphire (0001) substrate by hydride vapor phase epitaxy (HVPE). As a results of scanning electron microscope (SEM) observation, three types of hexagonal etch pits (Edge, Screw, Mixed) were formed by the GaN epilayer thickness variations. A lot of etch pits, attributed to screw and mixed type TD, were observed at thinner epilayer, leading to high etch pit density. On the other hand, the thickness of GaN epilayer increased with the number of etch pits corresponding to edge and mixed dislocations, which are the majority of TDs are observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.779-783
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• 2011

The morphology of etch pits in commercial 4H-SiC epi-wafer were investigated by molten-KOH etching. The etching process was optimized in $525{\sim}570^{\circ}C$ at 2~10 min and the novel type of etch pits was revealed. This type of etch pits have been considered as TED (threading edge dislocation) II, its origin and nature, however, are not reported yet. In this work, the morphology and evolution of etch pits during epitaxial growth were analyzed and the different behavior between TED and TEDII was discussed.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.1-8
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• 2015

This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.26-38
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• 1991

The fundamental conditions for growing $r-6Bi_2O_3{\cdot}SiO_2$(BSO) single crystal plates by EFG(Edge-defined Film-fed Growth) method, were investigated and characterization, quality test, property measurement were performed for obtained BSO single crystal plates. The opti$\mu$ growing conditions determined in this study were as follows: ${\cdot}$temperature gradient;$24^{\circ}C/cm$ ${\cdot}$pulling rate;2.0mm/h. BSO Single crystal plates grown at the above optimum conditions did not include secondary phase or grain boundary and were confirmed as single crystals by X-ray analysis. IT was found that the single crystal plates had <100> growth direction. G defects, ie pore, void inclusion, striation, were not detected in the single crystal plate under polarizing microscope but dislocations(microscopic defect) were found and dislocation density was $5.1\times10^5/cm^2$.

• Korean Journal of Remote Sensing
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• v.27 no.2
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• pp.141-150
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• 2011

Precise image-to-image registration is required to process multi-sensor data together. The purpose of this paper is to develop an algorithm that register between high-resolution optical and SAR images using linear features. As a pre-processing step, initial alignment was fulfilled using manually selected tie points to remove any dislocations caused by scale difference, rotation, and translation of images. Canny edge operator was applied to both images to extract linear features. These features were used to design a cost function that finds matching points based on their similarity. Outliers having larger geometric differences than general matching points were eliminated. The remaining points were used to construct a new transformation model, which was combined the piecewise linear function with the global affine transformation, and applied to increase the accuracy of geometric correction.