• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Structural Engineering and Mechanics
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• 제21권1호
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• pp.67-82
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• 2005

This study analyzes stress intensity factors for a number of periodic edge cracks in a semiinfinite medium subjected to a far field uniform applied load along with a distribution of eigenstrain. The eigenstrain is considered to be distributed arbitrarily over a region of finite depth extending from the free surface. The cracks are represented by a continuous distribution of edge dislocations. Using the complex potential functions of the edge dislocations, a simple as well as effective method is developed to calculate the stress intensity factor for the edge cracks. The method is employed to obtain the numerical results of the stress intensity factor for different distributions of eigenstrain. Moreover, the effect of crack spacing and the intensity of the normalized eigenstress on the stress intensity factor are investigated in details. The results of the present study reveal that the stress intensity factor of the periodic edge cracks is significantly influenced by the magnitude as well as distribution of the eigenstrain within the finite depth. The eigenstrains that induce compressive stresses at and near the free surface of the semi-infinite medium reduce the stress intensity factor that, in turn, contributes to the toughening of the material.

• 한국전기전자재료학회논문지
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• 제32권3호
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• pp.192-195
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• 2019

Single-crystal diamond obtained by chemical vapor deposition (CVD) exhibits great potential for use in next-generation power devices. Low defect density is required for the use of such power devices in high-power operations; however, plastic deformation and lattice strain increase the dislocation density during diamond growth by CVD. Therefore, characterization of the dislocations in CVD diamond is essential to ensure the growth of high-quality diamond. In this work, we analyze the characteristics of the dislocations in CVD diamond through synchrotron white beam X-ray topography. In estimate, many threading edge dislocations and five mixed dislocations were identified over the whole surface.

• Nuclear Engineering and Technology
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• 제43권5호
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• pp.421-428
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• 2011

The out-of-pile mechanical performance and microstructure of recrystallized Zr-1.5 Nb-S alloy was investigated. The strength of the recrystallized Zr-1.5Nb-O-S alloys was observed to increase with the addition of sulfur over a wide temperature range, from room temperature up to $300^{\circ}C$. A yield drop and stress serrations due to dynamic strain were observed at room temperature and $300^{\circ}C$. Wavy and curved dislocations and loosely knit tangles were observed after strained to 0.07 at room temperature, suggesting that cross slip is easier. At $300^{\circ}C$, however, dislocations were observed to be straight and aligned along the slip plane, suggesting that cross slip is rather difficult. At $300^{\circ}C$, oxygen atoms are likely to exert a drag force on moving dislocations, intensifying the dynamic strain aging effect. Oxygen atoms segregated at partial dislocations of a screw dislocation with the edge component may hinder the cross slip, resulting in the rather straight dislocations distributed on the major slip planes. Recrystallized Zr-Nb-S alloys exhibited ductile fracture surfaces, supporting the beneficial effect of sulfur in zirconium alloys. Oxidation resistance in air was also found to be improved with the addition of sulfur in Zr-1.5 Nb-O alloys.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• Applied Microscopy
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• 제42권3호
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• pp.151-157
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• 2012

The microstructure of various shapes of stacking fault pyramids (SFPs) formed in multiple implant/anneal Separation by Implanted Oxygen (SIMOX) material were investigated by plan-view and cross-sectional transmission electron microscopy. In the multiple implant/anneal SIMOX, the defects in the top silicon layer are confined at the interface of the buried oxide layer at a density of ${\sim}10^6\;cm^{-2}$. The dominant defects are perfect and imperfect SFPs. The perfect SFPs were formed by the expansion and interaction of four dissociated dislocations on the {111} pyramidal planes. The imperfect SFPs show various shapes of SFPs, including I-, L-, and Y-shapes. The shape of imperfect SFPs may depend on the number of dissociated dislocations bounded to the top of the pyramid and the interaction of Shockley partial dislocations at each edge of {111} pyramidal planes.

• Tribology and Lubricants
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• 제38권3호
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• pp.73-83
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• 2022

This paper is concerned with an analysis of a surface edge crack emanated from a sharp contact edge. For a geometrical model, a square wedge is in contact with a half plane whose materials are identical, and a surface perpendicular crack initiated from the contact edge exists in the half plane. To analyze this crack problem, it is necessary to evaluate the stress field on the crack line which are induced by the contact tractions and pseudo-dislocations that simulate the crack, using the Bueckner principle. In this Part I, the stress filed in the half plane due to the contact is re-summarized using an asymptotic analysis method, which has been published before by the author. Further focus is given to the stress field in the half plane due to a pseudo-edge dislocation, which will provide a stress solution due to a crack (i.e. a continuous distribution of edge dislocations) later, using the Burgers vector. Essential result of the present work is the corrective functions which modify the stress field of an infinite domain to apply for the present one which has free surfaces, and thus the infiniteness is no longer preserved. Numerical methods and coordinate normalization are used, which was developed for an edge crack problem, using the Gauss-Jacobi integration formula. The convergence of the corrective functions are investigated here. Features of the corrective functions and their application to a crack problem will be given in Part II.

• 한국세라믹학회지
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• 제28권11호
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• pp.878-884
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• 1991

The mobility and diffusivity in an edge dislocation in an FCC crystal formed by the removal of one half of a (100) plane were evaluated in an applied field by analyzing a vacancy tight binding model using Stark's matrix technique. A model of an edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge of the extrac half plane of ions was considered. The model considered a tight binding approximation of the vacancy to the compressed region of the core and carried the calculation to the limit of an infinite length of dislocation. The diffusivity and the ratio of mobility to diffusivity were found to increase without bounds in the limit where the correlation factor becomes zero. In contrast, as the correlation factor became unity, the diffusivity became zero and the ratio of mobility to diffusivity became unity associated with the uncorrelated limit of 1/kT. This implied that the phenomenon was not unique to the crystal structure but was unique to edge dislocations with vacancy tight binding.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.172-172
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• 2009

In this study, we presented comparative discrimination methods to identify various line and planar defects observed in nonpolar a-GaN epilayers on r-sapphire substrates. Unlike the case of conventional c-GaN, which is dominated by perfect threading dislocations, systematic identification of undistinguishable defects using transmission electron microscopy (TEM) is necessary to suppress the propagation of defects in nonpolar GaN epilayers. Cross-sectional TEM images near the [0001] zone axis revealed that perfect mixed and pure screw type dislocations are visible, while pure edge, partial dislocations, and basal stacking faults (BSFs) are not discernible. In tilted cross-sectional TEM images along the [$1\bar{2}10$] zone axis, the dominant defects were BSFs and partial dislocations for the $g=10\bar{1}0$ and 0002 two-beam images, respectively. From plan view TEM images taken along the [$11\bar{2}0$] axis, it was found that the dominantpartial and perfect dislocations were Frank-Shockley with b=${\pm}1/6$<$20\bar{2}3$> and mixed type without an 1 component including b=${\pm}1/3$<$1\bar{2}10$> and ${\pm}1/3$<$\bar{2}110$>, respectively. Prismatic stacking faults were observed as inclined line contrast near the [0001] zone axis and were visible as band contrast in the two-beam images along the [$1\bar{2}10$] and [$11\bar{2}0$] zone axes.

• 열처리공학회지
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• 제20권4호
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• pp.187-194
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• 2007

A transmission electron microscope (TEM) investigation has been performed on the precipitation of $L2_1$-type $Ni_2AlTi$ phase in B2-ordered NiAl system. The hardness after solution treatment is high in NiAl-Ti alloys suggesting the large contribution of solid solution strengthening in this alloy system. However, the amount of age hardening is not large as compared to the large microstructural variations during aging. At the beginning of aging, the $L2_1$-type $Ni_2AlTi$ precipitates keep a lattice coherency with the NiAl matrix. By longer periods of aging $Ni_2AlTi$ precipitates lose their coherency and change their morphology to the globular ones surrounded by misfit dislocations. Misfit dislocations, which are observed on {100} planes of H-precipitates have the Burgers vector of a <100> with a pure edge type. The lattice misfits of NiAl-$Ni_2AlTi$ system is estimated from the spacings of misfit dislocations to be 1.1% at 1273 K. The lattice misfits decrease with increasing aging temperature in this system.