• Title/Summary/Keyword: duplexer

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Tx-Leakage Signal Blocking System in RFID System (단일 안테나를 사용하는 RFID에서의 Phase Shifter를 이용한 TX Leakage 제거 방식)

  • Jeon, Bu-Won;Bae, Jae-Hyun;Roh, Hyoung-Hwan;Joung, Myoung-Sub;Park, Jun-Seok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.8
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    • pp.862-865
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    • 2007
  • Rx and Tx signal use same band in RFID. Then RFID system is not used duplexer and used coupler. RFID system have problem about Rx part to Tx leakage signal because that Rx signal port is Tx signal port's Isolation port. We proposal using phase shifter Tx leakage signal decrease than other RFID system. It is same signal Tx signal port's coupling port and isolation port signal except amplitude and phase. So if make coupling signal and isolation signal is in all same signal. We cancel Tx leakage signal used coupling port. And verification about ADS2006.

BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹의 마이크로웨이브 유전특성

  • Seong, Hui-Gyeong;Kim, Tae-Hong;Lee, Jae-Sin;Choe, Tae-Gu
    • ETRI Journal
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    • v.14 no.4
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    • pp.217-227
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    • 1992
  • 최근 이동통신 및 위성통신 등 마이크로웨이브를 이용하는 통신분야의 시장이 급속히 신장됨에 따라 RF(Radio Frequency) 부품의 산업적 중요성이 부각되고 있다. RF 부품은 크게 능동부품과 필터로 대표되는 수동부품으로 대별되는데, duplexer나 필터는 현재 대부분 마이크로웨이브 세라믹유전체를 사용 제조하고 있다. 본 연구에서는 이들 부품들에 사용가능한 세라믹유전체를 개발하기 위한 연구의 일환으로 BaO-$Sm_2$$O_3$-$TiO_2$계 세라믹의 마이크로웨이브 유전특성과 여기에$La_2\$$O_3$를 첨가한 계인 BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹유전체를 제조하여 마이크로웨이브 유전특성을 살펴보았다. RF 부품에 사용되는 세라믹유전체는 높은 유전율$\varepsilon_r$높은 품질계수 (Q) 및 안정된 온도특성 $\tau_f$ 등의 조건을 충족시켜야한다. 본 연구에서는 유전체의 $\varepsilon_r$ 및 Q의 측정에 디스크형 유전체공진기와 두개의 도체평행판을 사용한 Hakki-Coleman법을 사용하였으며, $\tau_f$는 fixture를 항온조에 넣어서 측정하였다. BaO-$Sm_2O_3-TiO_2$계의 경우 소결온도 $1350^{\circ}C$까지는 $\varepsilon_r$및 Q가 증가하나 그 이상의 소결온도에서는 감소한다. 그리고 $\tau_f$$-35_{ppm}/^{\circ}C$에서 소결온도에는 거의 의존하지 않았다. $La_2O_3$를 첨가한BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹의 마이크로웨이브 유전특성은 $La_2O_3$의 첨가량이 많을수록 $\tau_f$값이 음에서 양으로 이동함이 관찰되었으며, x=0.15에서 $\tau_f$가 0이 되어 마이크로웨이브 부품용 마이크로웨이브 세라믹유전체를 얻을 수 있음이 확인되었다.

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A Design of Hairpin Type Band-pass Filter with an Arbitrary Image Impedance and Coupled Line Length (임의의 영상 임피던스와 결합기를 갖는 hairpin형태의 대역통과 여파기 설계)

  • Lee, Dong-Hwan;Lee, Yong-Woo;Kim, Chul-Soo;Kim, Geun-Young;Park, Jun-Seok;Ahn, Dal
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.12
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    • pp.21-30
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    • 1999
  • Several kinds of design method for the hairpin type band-pass filter have been reported. The conventional design methods have some restrictions in characteristic impedance of coupled line section, which provide complexities to designer. In this paper, the novel design formulas for the hairpin type band pass filter have been derived and proposed to resolve the problems of the reported design methods. By employing the equivalent circuit of the coupled line section and band pass filter design theory, the design procedures and formulas are derived. The hairpin type RX/TX band pass filters for the IMT-2000 service have been designed, fabricated with duplexer configuration, and then measured to show the validity of the proposed design method.

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A Study on the Out-of-Band Rejection Improvement of TFBAR Ladder Filter using On-Wafer Inductors (기판상의 인덕터를 이용한 박막 공진 여파기의 대역 외 저지특성 개선 연구)

  • 김종수;구명권;육종관
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.3
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    • pp.284-290
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    • 2004
  • In this paper, two types of thin nim bulk acoustic resonator(TFBAR) ladder filters are desisted and fabricated to analyze the effects of on-wafer inductor integration. To suppress the overmode phenomenon a 1 $\mu\textrm{m}$ thick air-gap is fabricated under the TFBAR and aluminum nitride is used for piezoelectric material, while platinum is employed for the top and bottom electrodes. The Tx filter in a duplexer, which usually has a steeper skirt characteristics o the right side of the passband, is designed with four serial and two shunt resonators, namely, a 4/2 stage. Similarly, the Rx filter is devised with a 3/4 stage to create a mirrored image of the Tx filter passband characteristics. Fabricated on-wafer spiral inductors with underpass reveals the Q factor of 5~9 at 2 ㎓. Inductor integrated filters have approximately 10 to 12 ㏈ out-of-band rejection improvement, when compared to the original filters.

Development of Common PCS Base Station System (PCS 공용 기지국 시스템 개발)

  • 황선호;박준현;김훈석
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.05a
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    • pp.214-217
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    • 2001
  • This paper presents an implementation methodology of common Rf- integrated PCS base station system which, is capable of providing PCS services for 3 PCS carriers concurrently and wireless system performance evaluation data is shown. We have built up a common PCS base station system using a commonization module, which is consisted of a multi-channel combiner, duplexer, LNA, power divider, feeder line, and a common set of antennas. It was shown that the performance of the system within the total 30MHz PCS frequency range is uniformly acceptable and measured signal quality and coverage are equivalent to that of the individual PCS base station. It is expected that PCS carriers are able to save a huge amount of installation and maintenance expenses by installing and sharing this base station system. This paper forms a groundwork for deploying efficient and economical IMT-2000 network.

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Real-time 14N NQR-based sodium nitrite analysis in a noisy field

  • Mohammad Saleh Sharifi;Ho Seung Song;Hossein Afarideh;Mitra Ghergherehchi;Mehdi Simiari
    • Nuclear Engineering and Technology
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    • v.55 no.12
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    • pp.4570-4575
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    • 2023
  • Noise and Radio-frequency interference or RFI causes a significant restriction on the Free induction Decay or FID signal detection of the Nuclear Quadrupole Resonance procedure. Therefore, using this method in non-isolated environments such as industry and ports requires extraordinary measures. For this purpose, noise reduction algorithms and increasing signal-to-noise-and-interference ratio or SNIR have been used. In this research, sodium nitrite has been used as a sample and algorithms have been tested in a non-isolated environment. The resonant frequencies for the 150 g of test sample were measured at 303 K at about 1 MHz and 3.4 MHz. The main novelty in this study was, (1) using two types of antennas in the receiver to improve adaptive noise and interference cancellation, (2) using a separate helical antenna in the transmitter to eliminate the duplexer, (3) estimating the noise before sending the pulse to calculate the weighting factors and reduce the noise by adaptive noise cancellation, (3) reject the interference by blanking algorithm, (4) pulse integration in the frequency domain to increase the SNR, and (5) increasing the detection speed by new pulse integration technique. By interference rejection and noise cancellation, the SNIR is improved to 9.24 dB at 1 MHz and to 7.28 dB at 3.4 MHz, and by pulse integration 44.8 dB FID signal amplification is achieved, and the FID signals are detected at 1.057 MHz and 3.402 MHz at room temperature.

Design of a LTCC Front End Module with Power Detecting Function (전력 검출 기능을 포함하는 LTCC 프런트 엔드 모듈 설계)

  • Hwang, Mun-Su;Koo, Jae-Jin;Koo, Ja-Kyung;Lim, Jong-Sik;Ahn, Dal;Yang, Gyu-Yeol;Kim, Jun-Chul;Kim, Dong-Su;Park, Ung-Hee
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.8
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    • pp.844-853
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    • 2008
  • This paper describes the design of a FEM(Front End Module) having power detection function for mobile handset application. The designed FEM consists of a MMIC(Monolithic Microwave Integrated Circuits) power amplifier chip, SAW Tx filter and duplexer, diode power detector and stripline matching circuit. An LTCC(Low Temperature Co-fired Ceramics) technology is adopted for miniaturized FEM. The frequency band is $824{\sim}869$ MHz which is the uplink Tx band of the CDMA mobile system. The size of designed FEM is $7.0{\times}5.5{\times}1.5\;mm^3$, which is an ultra-small size even though the power detector circuit is included. All sub-components of FEM have been developed and measured in advance before being integrated into FEM. The measured output power and gain are 27 dBm and 27 dB, respectively. In addition, the measured ACPR characteristics are 46.59 dBc and 55.5 dBc at 885 kHz and 1.98 MHz offset, respectively.

Design and implementation of dual band power amplifier for 800MHz CDMA and PCS handset (CDMA방식의 이중대역 전력증폭기의 설계 및 제작)

  • 윤기호;유태훈;유재호;박한규
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.12
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    • pp.2674-2685
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    • 1997
  • In this paper, the design and imprlementation of dual-band power amplifier which is used as a critical part for mobile phone to be simultaneously working at a dual band, 800MHz CDAM and PCS frequency band is described. DC operating point of power FET is limited to Class-B to enable long talk time considering that the tyupical power range of CDMA phones in working is around 10 to Class-B to enable long talk time considering that the typical power range of CDMA phones in working is around 10 to 15dBm, i.e., liner range. The power amplifier which employs two GaAs FETs with good linerity at a low operating point has duplexer cuplexer circuit to separate two frequency bands at input and output stage. Electromagnetic analysis for via holes and coupling between narrow transmission lines is included to design a circuit. Moduld size of 0.96CC($22{\times}14.5{\times}3mm^3$) and maximum module current of 130mA at output power range, 10 to 15dBm are attained. The power amplifer module has achieved ACPR performance with 2 to 3dB marging from IS-95 requirement at output powers, 23.5dBm for PCS and 28dBm for 800MHz CDMA respectively.

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