• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.23-27
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• 2006

Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.316-321
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• 2016

To study emission characteristics for dual-emission tandem organic light emitting display (OLED), we fabricated blue fluorescent OLED according to thickness variation of $MoO_x$ as charge generation layer and Al as cathode. The bottom emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness showed threshold voltage of 9, 7, 9 V, maximum current emission efficiency of 19.32, 23.18, 15.44 cd/A and luminance of $1,000cd/m^2$ at applied voltage of 17.6, 13.2, 16.5 V, respectively. The top emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness indicated threshold voltage of 13, 10, 13 V, maximum current emission efficiency of 0.17, 0.23, 0.16 cd/A and luminance of $50cd/m^2$ at applied voltage of 22.6, 16.5, 20.1 V, respectively. In case of thicker or thinner than $MoO_x$ of 3 nm, the emission characteristics were decreased because of mismatching of electron and hole in emission layer. The bottom emission characteristics of OLED with Al 15, 20, 25 nm thickness showed threshold voltage of 8, 8, 7 V, maximum current emission efficiency of 18.42, 22.98, 23.18 cd/A and luminance of $1000cd/m^2$ at applied voltage of 16.2, 13.9, 13.2 V, respectively. The reduction of threshold voltage and increase of maximum current emission efficiency are caused by the increase of current injection according to increase of Al cathode thickness. The top emission characteristics of OLED with Al 15, 20, 25 nm thickness indicated threshold voltage of 7, 7, 8 V, maximum emission luminance of 371, 211, $170cd/m^2$, respectively. The top emission OLED of Al cathode with 15 nm thickness showed maximum luminance and it decreased at thickness of 20 nm. These phenomena are caused by the decrease of intensity of emitted light by reduction of optical transmittance according to increase of Al cathode thickness.

• Current Applied Physics
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• v.18 no.12
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• pp.1592-1599
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• 2018

The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.268-270
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• 2007

LCD Backlight 구동 응용을 위한 새로운 인버터 회로 Topology인 Dual Active Clamp Forward (ACF) Inverter를 제안한다. 제안된 회로는 LCD의 광원 역할을 하는 냉음극 형광램프(Cold Cathode Fluorescent Lamp, CCFL) 구동을 위한 회로로서, 넓은 입력 범위 및 부하 범위에서도 영 전압 스위칭 동작을 보장하며, 출력 AC 전류의 대칭성을 보장한다. 더욱이 기존 Symmetric Phase Shift Full Bridge방식은 특허 우선순위가 있는 방법으로써, Dual ACF Inverter를 사용할 경우 특허 Royalty 부담을 줄일 수 있다. 본 논문에서는 제안된 회로의 동작원리에 대한 타당성을 이론적 분석 및 모의실험을 통하여 검증한다.

• Journal of the Korean Society of Propulsion Engineers
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• v.20 no.3
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• pp.54-62
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• 2016

Micro plasma thruster (${\mu}PT$) was studied experimentally with a dual-stage micro-hollow cathode discharge (MHCD) plasma. Electrostatic-like acceleration exhibiting more directional and elongated exhaust plume was achieved by a dual layer MHCD at the total input power less than 10 W with argon flow rate of 40 sccm. V-I characteristic indicated that there was an optimal regime for dual-stage operation where the acceleration voltage across the second stage remained constant. Estimated exhaust plume length showed a similar trend to the analytic estimate of exhaust velocity which scales with an acceleration voltage. ${\mu}PT$ with multiple holes exhibited similar performance with single-hole thruster indicating that higher power loading is possible owing to decreased power through each hole. Boltzmann plot of atomic argon spectral lines showed average electron excitation temperature of about 2.6 eV (~30,170 K) in the exhaust plume.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.358-363
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• 2004

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

• Korean Chemical Engineering Research
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• v.57 no.3
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• pp.425-431
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• 2019

As rechargeable metal-air batteries will be ideal energy storage devices in the future, an active cathode electrocatalyst is required with bi-functionality on both oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) during discharge and charge, respectively. Here, a class of perovskite cathode catalyst with a micro-tubular structure has been developed by controlling bi-functionality from different Ru and Ni dopant ratios. A micro-tubular structure is achieved by the activated carbon fiber (ACF) templating method, which provides uniform size and shape. At the perovskite formula of $LaCrO_3$, the dual dopant system is successfully synthesized with a perfect incorporation into the single perovskite structure. The chemical oxidation states for each Ni and Ru also confirm the partial substitution to B-site of Cr without any changes in the major perovskite structure. From the electrochemical measurements, the micro-tubular feature reveals much more efficient catalytic activity on ORR and OER, comparing to the grain catalyst with same perovskite composition. By changing the Ru and Ni ratio, the $LaCr_{0.8}Ru_{0.1}Ni_{0.1}O_3$ micro-tubular catalyst exhibits great bi-functionality, especially on ORR, with low metal loading, which is comparable to the commercial catalyst of Pt and Ir. This advanced catalytic property on the micro-tubular structure and Ru/Ni synergy effect at the perovskite material may provide a new direction for the next-generation cathode catalyst in metal-air battery system.

• Journal of the Korean institute of surface engineering
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• v.52 no.3
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• pp.171-179
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• 2019

We have developed a numerical model to analyze flow dynamics and heat transfer characteristics of the cooling water in a circular rotating magnetron cathode by a moving boundary grid method realized in a commercial multiphysics package, CFD-ACE+. The numerical model is composed of a target, dual mass rotating cathode and cooling water connections. When the inlet and outlet of the cooling water are offset by the same distance from the rotation axis, the temperature at the center is higher by $50^{\circ}C$ at maximum. At 5 mm away from the target surface, the temperature profile showed typical center high characteristic. At heat input of 30 kW, the maximum temperature change of the cooling water hits $6^{\circ}C$ within 0.5 sec under 60 rpm. With a cooling water configuration of center in/edge out, the temperature of the center region of the target gets lowered. Within 100 seconds of plasma operation time, the cooling water temperature keeps getting higher.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.30-30
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• 2000

당사는 각종 진공 장비를 개발/제작한 경험을 바탕으로 25년 동안 진공 산업 발전에 기여하여 왔으며 자체 기술로 HIGH VACUUM 응용시스템 설계 및 제작하고 있다. 이와 함께 3D CAD를 이용한 consulting 및 Modeling 분석을 수행하여, 자체 기술로 설계 및 제작 판매하고 있다. Vacuum System은 In-line System (ITO, SiO2, Cr Tio2, Ag, Al 등), Roll to Roll(Web) Sputtering system (ITO, SiO2, Ar, Metal 등), 유기 EL 박막 진공 증착 장치, PECVD System, Evaporator 시스템 등을 제작 공급하고 있다. 현재 Roll to Roll(Web) Sputtering System은 Dual Cathode를 사용하는 방식으로 개발중에 있으며, 평판 디스플레이용 대면적 Glass를 위한 In-line Sputtering System을 같이 개발하고 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.259-266
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• 2004

In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.