• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.3 no.3
• /
• pp.547-552
• /
• 1999

In [1], it is shown that a subclass of ETBFs, which are self-dual ETBFs can be expressed as a weighted average of median subfiltered outputs. In this paper, the ETBF is extended for real-valued input. Using this result, the scale-preservation and translation-invariance properties of the ETBFs are investigated. In particular, it is shown that the ETBFs are scale-preserving if and only if it is extended self-dual.

• Journal of the Korean institute of surface engineering
• /
• v.49 no.3
• /
• pp.316-321
• /
• 2016

To study emission characteristics for dual-emission tandem organic light emitting display (OLED), we fabricated blue fluorescent OLED according to thickness variation of $MoO_x$ as charge generation layer and Al as cathode. The bottom emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness showed threshold voltage of 9, 7, 9 V, maximum current emission efficiency of 19.32, 23.18, 15.44 cd/A and luminance of $1,000cd/m^2$ at applied voltage of 17.6, 13.2, 16.5 V, respectively. The top emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness indicated threshold voltage of 13, 10, 13 V, maximum current emission efficiency of 0.17, 0.23, 0.16 cd/A and luminance of $50cd/m^2$ at applied voltage of 22.6, 16.5, 20.1 V, respectively. In case of thicker or thinner than $MoO_x$ of 3 nm, the emission characteristics were decreased because of mismatching of electron and hole in emission layer. The bottom emission characteristics of OLED with Al 15, 20, 25 nm thickness showed threshold voltage of 8, 8, 7 V, maximum current emission efficiency of 18.42, 22.98, 23.18 cd/A and luminance of $1000cd/m^2$ at applied voltage of 16.2, 13.9, 13.2 V, respectively. The reduction of threshold voltage and increase of maximum current emission efficiency are caused by the increase of current injection according to increase of Al cathode thickness. The top emission characteristics of OLED with Al 15, 20, 25 nm thickness indicated threshold voltage of 7, 7, 8 V, maximum emission luminance of 371, 211, $170cd/m^2$, respectively. The top emission OLED of Al cathode with 15 nm thickness showed maximum luminance and it decreased at thickness of 20 nm. These phenomena are caused by the decrease of intensity of emitted light by reduction of optical transmittance according to increase of Al cathode thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2015.10a
• /
• pp.465-467
• /
• 2015

This paper implements a dual-mode power strip controller (PSCtrl) with environmental sensors which cooperates with Android-based smartphones. According to the statistics on fires in housing facilities, unidentified electrical fires account for 23.4%. In order to reduce these fire accidents caused by user carelessness and protect life and property, smart power control techniques with improved user convenience are required. For this reason, the implemented dual-mode PSCtrl controls ON-OFF operations of a power strip in two ways (e.g. manual and automatic modes) by cooperating with Android-based smartphones provided with environmental data from light, temperature, and humidity sensors. In manual mode, users check environmental data displayed on Android-based smartphones, forcibly controlling the ON-OFF operations through the dual-mode PSCtrl, and in automatic mode, when environmental data exceeds the threshold set by users in advance, the dual-mode PSCtrl automatically controls the ON-OFF operations. Some experimental tests verify successful dual-mode operations of the implemented dual-mode PSCtrl.

• Journal of the Korean Society for Aviation and Aeronautics
• /
• v.24 no.1
• /
• pp.10-15
• /
• 2016

In this study, The code-carrier divergence test was applied to GPS measurements, and the results were compared and analyzed. The GPS data used for the threshold determination were obtained from Global Navigation Satellite System permanent stations built by the Korea Aerospace Research Institute. At each permanent station, identical dual-frequency receiver and choke ring antenna with radome are installed. The analysis method, root mean square values were compared and analyzed for each permanent station and satellite. As a result, the root mean square value generally decreased as the satellite elevation angle increased although the trend was gentle. Threshold were finally selected based on the average and standard deviation of root mean square for each permanent station. For improving of availability and continuity in real-time operation when the threshold is over the limits, Code-Carrier divergence test values are initialized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.2
• /
• pp.76-80
• /
• 2014

Dual-gate PCRAM which unify capacitor-less DRAM and NVM using a PCM instead of a typical SONOS flash memory is proposed as 1 transistor. $VO_2$ changes its phase between insulator and metal states by temperature and field. The front-gate and back-gate control NVM and DRAM, respectively. The feasibility of URAM is investigated through simulation using c-interpreter and finite element analysis. Threshold voltage of NVM is 0.5 V that is based on measured results from previous fabricated 1TPCM with $VO_2$. Current sensing margin of DRAM is 3 ${\mu}A$. PCM does not interfere with DRAM in the memory characteristics unlike SONOS NVM. This novel unified dual-gate PCRAM reported in this work has 1 transistor, a low RESET/SET voltage, a fast write/erase time and a small cell so that it could be suitable for future production of URAM.

• Journal of IKEEE
• /
• v.15 no.2
• /
• pp.143-148
• /
• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• Journal of electromagnetic engineering and science
• /
• v.10 no.2
• /
• pp.50-55
• /
• 2010

Orthogonal Frequency Division Multiplexing(OFDM) dual-hop systems can take full advantages of the techniques of both multi-hop communication and OFDM. To achievethis end, we propose a joint subcarrier matching, power allocation and bit loading algorithm operating under a total power constraint and the same Bit Error Rate(BER) threshold over all subcarriers. Simulation results demonstrated system throughput improvement compared to single-hop systems and dual-hop systems with different bit loading algorithms for each relay position, power constraint, and required BER.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.3
• /
• pp.233-237
• /
• 2002

A giga-bit DRAM(dynamic random access memory) technology with W/WNx/poly-Si dual gate electrode is presented in 7his papers. We fabricated $0.16\mu\textrm{m}$ CMOS using this technology and succeeded in suppressing short-channel effects. The saturation current of nMOS and surface-channel pMOS(SC-pMOS) with a $0.16\mu\textrm{m}$ gate was observed 330 $\mu\A/\mu\textrm{m}$ and 100 $\mu\A/\mu\textrm{m}$ respectively. The lower salutation current of SC-pMOS is due to the p-doped poly gate depletion. SC-pMOS shows good DIBL(dram-induced harrier lowering) and sub-threshold characteristics, and there was no boron penetration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.4
• /
• pp.296-299
• /
• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• Proceedings of the KIEE Conference
• /
• 1998.07g
• /
• pp.2480-2482
• /
• 1998

In this paper, the implementation of dual rate ADPCM using G.723 16Kbps and 40Kbps speech codec algorithm is handled. For small signals, the low rate 16Kbps coding algorithm shows the same SNR as the high rate 40Kbps coding algorithm, while the low rate 16Kbps coding algorithm shows the lower SNR than the high rate 40Kbps coding algorithm for large signal. To obtain the good trade-off between the data rate and synthesized speech quality, we applied low rate 16Kbps for the small signal and high rate 40Kbps for the large signal. Various threshold values determining the rate are tested for good trade off data rate and speech quality. Also the low pass filter effect of speech input and output devices is simulated at several cut-off frequencies. To simulation result shows the good speech quality at a low rate comparing with 16Kbps & 40Kbps.