• Title/Summary/Keyword: dual threshold

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Implementation of Variable Threshold Dual Rate ADPCM Speech CODEC Considering the Background Noise (배경잡음을 고려한 가변임계값 Dual Rate ADPCM 음성 CODEC 구현)

  • Yang, Jae-Seok;Han, Kyong-Ho
    • Proceedings of the KIEE Conference
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    • 2000.07d
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    • pp.3166-3168
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    • 2000
  • This paper proposed variable threshold dual rate ADPCM coding method which is modified from the standard ADPCM of ITU G.726 for speech quality improvement. The speech quality of variable threshold dual rate ADPCM is better than single rate ADPCM at noisy environment without increasing the complexity by using ZCR(Zero Crossing Rate). In this case, ZCR is used to divide input signal samples into two categories(noisy & speech). The samples with higher ZCR is categorized as the noisy region and the samples with lower ZCR is categorized as the speech region. Noisy region uses higher threshold value to be compressed by 16Kbps for reduced bit rates and the speech region uses lower threshold value to be compressed by 40Kbps for improved speech quality. Comparing with the conventional ADPCM, which adapts the fixed coding rate. the proposed variable threshold dual rate ADPCM coding method improves noise character without increasing the bit rate. For real time applications, ZCR calculation was considered as a simple method to obtain the background noise information for preprocess of speech analysis such as FFT and the experiment showed that the simple calculation of ZCR can be used without complexity increase. Dual rate ADPCM can decrease the amount of transferred data efficiently without increasing complexity nor reducing speech quality. Therefore result of this paper can be applied for real-time speech application such as the internet phone or VoIP.

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Voice Activity Detection Algorithm base on Radial Basis Function Networks with Dual Threshold (Radial Basis Function Networks를 이용한 이중 임계값 방식의 음성구간 검출기)

  • Kim Hong lk;Park Sung Kwon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.12C
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    • pp.1660-1668
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    • 2004
  • This paper proposes a Voice Activity Detection (VAD) algorithm based on Radial Basis Function (RBF) network using dual threshold. The k-means clustering and Least Mean Square (LMS) algorithm are used to upade the RBF network to the underlying speech condition. The inputs for RBF are the three parameters in a Code Exited Linear Prediction (CELP) coder, which works stably under various background noise levels. Dual hangover threshold applies in BRF-VAD for reducing error, because threshold value has trade off effect in VAD decision. The experimental result show that the proposed VAD algorithm achieves better performance than G.729 Annex B at any noise level.

High Speed And Low Voltage Swing On-Chip BUS (고속 저전압 스윙 온 칩 버스)

  • Yang, Byeong-Do;Kim, Lee-Seop
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.2
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    • pp.56-62
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    • 2002
  • A new high speed and low voltage swing on-chip BUS using threshold voltage swing driver and dual sense amplifier receiver is proposed. The threshold voltage swing driver reduces the rising time in the bus to 30% of the full CMOS inverter driver and the dual sense amplifier receiver increases twice the throughput. of the conventional reduced-swing buses using sense amplifier receiver. With threshold voltage swing driver and dual sense amplifier receiver combined, approximately 60% speed improvement and 75% power reduction are achieved in the proposed scheme compared to the conventional full CMOS inverter for the on-chip bus.

A Study Comparison and Analysis of Electrical Characteristics of IGBTs with Variety Gate Structures (다양한 게이트 구조에 따른 IGBT 소자의 전기적 특성 비교 분석 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.11
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    • pp.681-684
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    • 2016
  • This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

Threshold Voltage Control of Pentacene Thin-Film Transistor with Dual-Gate Structure

  • Koo, Jae-Bon;Ku, Chan-Hoe;Lim, Sang-Chul;Lee, Jung-Hun;Kim, Seong-Hyun;Lim, Jung-Wook;Yun, Sun-Jin;Yang, Yong-Suk;Suh, Kyung-Soo
    • Journal of Information Display
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    • v.7 no.3
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    • pp.27-30
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    • 2006
  • This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.

An Analytical Modeling of Threshold Voltage and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for High Speed Wireless Communication

  • Balamurugan, N.B.;Sankaranarayanan, K.;Amutha, P.;John, M. Fathima
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.3
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    • pp.221-226
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    • 2008
  • A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.

Dual Mode Packet Transmission Scheme using a Dynamic Switching Threshold in the IMT-2000 (IMT-2000에서 동적 스위칭 임계점을 이용하는 이중 모드 패킷 전송방식)

  • 김장욱;반태원;오창헌;조성준
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.5
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    • pp.907-915
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    • 2003
  • A very efficient packet transmission scheme is needed in the radio environment where radio resource is insufficient as compared with the environment of the wired communication. In general, dual mode packet transmission scheme is used broadly. Packets are transmitted through the dedicated or common chamois according to a switching criterion. The general criteria are the length and generation frequency of packet, that is, large and frequent packets are transmitted using a dedicated channel and small and infrequent packets are transmitted using a common channel. The performance of dual mode packet transmission scheme is closely related to the switching criteria. However, it is very difficult to find the optimal switching point because that is not fixed but variable according to the environment such as traffic load, length of generated packets, and the number of channels. In this paper, a new scheme for the dual mode packet transmission scheme using a dynamic switching threshold is proposed where the switching threshold is not fixed but variable according to the network environment. The performance of the proposed method is analyzed using a simulation. From the simulation results, it is shown that the performance of the proposed scheme is not very influenced by the network environment unlike the conventional dual mode packet transmission scheme.

Denoising Algorithm using Wavelet (웨이브렛을 이용한 잡음 제거 알고리즘)

  • 배상범;김남호
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.8
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    • pp.1139-1145
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    • 2002
  • Wavelet transformed data can filter signal with each frequency band, because it includes detail information about original signal. Therefore, in this paper, important two noises were removed by wavelet. About AWGN environment UDWT(undecimated discrete wavelet transform), applying hard-threshold, was used and about impulse noise environment, it can be possible to recognize edge of original signal as well as superior denoising effect by using two methods, denoising by threshold and slope of signal by wavelet. SNR was used as a judgemental criterion of a denoising effect and Blocks and DTMF(dual tone multi frequency) were used as a test signal.

Formation of Dual Threshold in a Vertical Alignment Liquid Crystal Device

  • Choi, Sun-Wook;Jin, Huilian;Kim, Ki-Han;Lee, Ji-Hoon;Kim, Hoon;Shin, Ki-Chul;Kim, Hee Seop;Yoon, Tae-Hoon
    • Journal of the Optical Society of Korea
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    • v.16 no.2
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    • pp.170-173
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    • 2012
  • We present a method that enables dual threshold voltages in a vertical alignment liquid crystal device, through which the gamma shift can be reduced with no subsequent decrease in the contrast ratio. By forming polymer layers, the threshold voltage shift is accomplished through the utilization of the voltage drop effect. We expect that the proposed method can be applied to the conventional 4-domain mode in order to achieve an 8-domain mode without the need for complex driving schemes.

S/W Watch-Dog method between dual CPU using different OS (이종 OS로 구동되는 Dual CPU 기반에서의 S/W Watch-Dog 기법)

  • You, Young-Eel;Chon, Byoung-Sil
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.2
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    • pp.34-39
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    • 2010
  • This paper proposes S/W Watch-Dog method between Dual CPU using the different OS. The proposed watch-dog method performs that it distinguishes the status of channel between dual CPU and status of processor itself. We find out the ideal value of threshold and priority for load test task. and we evaluate the accuracy of the proposed S/W Watch-Dog Method at the result of evaluation. We figure out that the accuracy of proposed method is higher than the accuracy of general S/W Watch-Dog Method in case of variable data rate. Therefore we confirm that the proposed Method has high accuracy of watch-dog function with the ideal value of threshold and priority for load test task through the performance evaluation.