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A Study Comparison and Analysis of Electrical Characteristics of IGBTs with Variety Gate Structures

다양한 게이트 구조에 따른 IGBT 소자의 전기적 특성 비교 분석 연구

  • Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2016.08.07
  • Accepted : 2016.10.05
  • Published : 2016.11.01

Abstract

This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

Keywords

References

  1. E. G. Kang, D. S. Oh, D. W. Kim, D. J. Kim, and M. Y. Sung, J. Korean Inst. Electr. Electron. Mater. Eng., 15, 758 (2002).
  2. J. I. Lee, S. M. Yang, Y. S. Bae, and M. Y. Sung, J. Korean Inst. Electr. Electron. Mater. Eng., 23, 190 (2010).
  3. T. Laska, M. Munzer, F. Pfirsch, C. Schaeffer, and T. Schmidt, ISPSD Proceedings, 355 (2000). [DOI: http://dx.doi.org/10.1109/ispsd.2000.856842]
  4. B. S. Ahn, H. S. Chung, E. S. Jung, S. J. Kim, and E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 187 (2012).
  5. J. S. Lee, E. G. Kang, and M. Y. Sung, Microelectronics Journal, 39, 57 (2008). [DOI: http://dx.doi.org/10.1016/j.mejo.2007.10.023]