• 한국광학회지
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• 제8권1호
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• pp.26-30
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• 1997

서로 수직으로 편광되고 두개의 종모우드로 발진하는 주파수가 안정화된 He-Ne 레이저를 이용하여 넓은 측정 범위를 갖는 헤테로다인 간섭계를 구성하였다. 두 모우드 사이의 맥놀이 주파수인 684MHz에 대한 라디오 주파수 간섭을 이용하여 약 .+-.1.74.mu.m의 분해능으로 광학매질의 광학두께를 측정할 수 있는 장치를 구성하였다. 이와 같은 측정장치를 이용하여 Nd:YAG 레이저의 수동형 Q-스위칭에 포화흡수체로 사용되고 있는 유기염료 박막의 두께와 국부적인 광학두께의 변화에 대한 map을 구할 수 있었다.

• The Journal of Advanced Prosthodontics
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• 제10권3호
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• pp.211-217
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• 2018

PURPOSE. To evaluate the effect of prolonged sandblasting on the bond durability of dual-cure adhesive resin cement to computer-aided design and computer-aided manufacturing (CAD/CAM) restoratives. MATERIALS AND METHODS. Nano-ceramic LAVA Ultimate and hybrid-ceramic VITA Enamic CAD/CAM blocks were used for this study. Each CAD/CAM block was sectioned into slabs of 4-mm thickness for the microtensile test (${\mu}TBS$) test and 2-mm thickness for the surface roughness test. Three groups were created according to the sandblasting protocols; group 1: specimens were sandblasted for 15 seconds, group 2: specimens were sandblasted for 30 seconds, and group 3: specimens were sandblasted for 60 seconds. After sandblasting, all specimens were luted using RelyX Ultimate Clicker. Half the specimens were subjected to ${\mu}TBS$ tests at 24 hours, and the other half were subjected to tests after 5000 thermocycles. Additionally, a total of 96 CAD/CAM block sections were prepared for surface roughness tests and scanning electron microscopy (SEM) evaluations. The Mann-Whitney U test, Kruskal-Wallis one-way analysis of variance, and Dunn's post hoc test were used to compare continuous variables among the groups. RESULTS. At baseline, group 1, group 2, and group 3 exhibited statistically similar ${\mu}TBS$ results for LAVA. However, group 3 had significantly lower ${\mu}TBS$ values than groups 1 and 2 for VITA. After 5000 thermocycles, ${\mu}TBS$ values significantly decreased for each block (P<.05). CONCLUSION. It is important to perform controlled sandblasting because it may affect bond strength results. Sixty seconds of sandblasting disturbs the initial ${\mu}TBS$ values and the stability of adhesion of CAD/CAM restoratives to dual-cure adhesive resin cement for VITA Enamic.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.249-251
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• 2003

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.123-124
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• 2005

We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.95-100
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• 2022

In this paper, a power loss analysis technique of a high-frequency transformer of a bidirectional DAB (Dual Active Bridge) converter is reported. To miniaturize the transformer of the dual active bridge converter, a resonant inductor was designed with an air gap included low-coupled rate state core to combine leakage inductor with the resonant inductor which is required for soft-switching. In this paper, leakage inductance and magnetizing inductance, core material, type of winding and winding method are included in the dual active bridge transformer loss analysis process to enable optimal design at the initial design stage. Transformer loss analysis for dual active bridge with a switching frequency of 200 kHz and maximum output of 5 kW was executed, and elements necessary for design based on the number of turns on the primary side were graphed while maintaining the transformer turns ratio and window area. In particular, it was possible to determine the optimal number of turns and thickness of the transformer, and ultimately, the total loss of the transformer could be estimated.

• 대한의용생체공학회:의공학회지
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• 제9권2호
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• pp.185-194
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• 1988

The dual-energy technique win used to separate the bone-only and tissue-only images from the conventional chest images. The equivalent thickness of the basic materials are estimated from low and high energy images of a given complex materials using the attenuation coefficient of ma serial componens. We showed that the image quality of dual-energy imaging method can be influenced by the ponlinearity and noise components of system and spectrum distributions The quantitative analysis of Calcium component was performed by dual-energy technique and it is shown that the concentration of the Calcium could be accurately estimated within 5% error range.

• 한국전자통신학회논문지
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• 제7권6호
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• pp.1275-1279
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• 2012

본 논문에서는, 무선통신을 위한 이중대역 마이크로스트립 안테나를 설계하였다. IEEE 802.11a의 대역인 Hyper LAN(5.725~5.825GHz)에서도 사용 할 수 있도록 설계하였다. 제안된 안테나의 기판은 FR-4이고 크기는 $22mm{\times}23mm$, 두께는 1.6mm로 구성하였으며, 시뮬레이션은 CST Microwave Studio 2010을 사용하였다. 설계된 안테나의 시뮬레이션 결과 5GHz와 5.8GHz의 대역에서 공진을 나타내고 -10dB 이하에서 양호한 반사손실을 보였다.

• 소성∙가공
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• 제24권3호
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• pp.194-198
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• 2015

Microstructure based FE simulations were conducted to investigate the micro-mechanical properties of ferrite-martensite dual-phase steels. The FE model was built based on real microstructure images which were characterized by optical microscopy through the thickness direction. Serial sectioned 2D images were converted into semi-2D representative volume elements (RVEs) model. Each RVE model was subjected to a non-proportional loading condition and the mechanical response was analyzed on both the macroscopic and microscopic levels. Macroscopically, stress-strain curves were described under tension-compression and tension-orthogonal tension conditions and the Bauschinger effect was well captured for both loading paths. In addition, micromechanical properties were investigated in the view of stress-strain partitioning and strain localization during monotonic tension.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.93-96
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• 2017

The structural, electrical and optical properties of Ti thin films fabricated by dual magnetron sputtering were investigated under various film thicknesses. The fabricated Ti thin films exhibited uniform surfaces, crystallinity, various grain sizes, and with various film thicknesses. Also, the crystallinity and grain size of the Ti thin films increased with the increase of film thickness. The electrical properties of Ti thin films improved with the increase of film thickness. The results showed that the performance of TCO-less DSSC critically depended on the film thickness of the Ti working electrodes, due to the conductivity of Ti thin film. However, the maximum conversion efficiency of TCO-less DSSC was exhibited at the condition of 100 nm thickness due to the surface scattering of photons caused by the variation of grain size.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.44-48
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• 2008

Hole mobility characteristics of two representative biaxially strained SiGe/Si structures with high Ge contents are studied, They are single channel ($Si/Si_{1-x}Ge_x/Si$ substrate) and dual channel ($Si/Si_{1-y}Ge_y/Si_{1-x}Ge_x/Si$ substrate), where the former consists of a relaxed SiGe buffer layer with 60 % Ge content and a tensile-strained Si layer on top, and for the latter, a compressively strained SiGe layer is inserted between two layers, Owing to the hole mobility performance between a relaxed SiGe film and a compressive-strained SiGe film in the single channel and the dual channel, the hole mobility behaviors of two structures with respect to the Si cap layer thickness shows the opposite trend, Hole mobility increases with thicker Si cap layer for single channel structure, whereas it decreases with thicker Si cap layer for dual channel. This hole mobility characteristics could be easily explained by a simple capacitance model.