• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.78-82
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• 2020

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.

• Geomechanics and Engineering
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• v.7 no.5
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• pp.525-537
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• 2014

The typical design of ground improvement with prefabricated vertical drains (PVD) and surcharge preloading involves a series of deterministic analyses using averaged or mean soil properties for the various combination of the PVD spacing and surcharge preloading height that would meet the criteria for minimum consolidation time and required degree of consolidation. The optimum design combination is then selected in which the total cost of ground improvement is a minimum. Considering the variability and uncertainties of the soil consolidation parameters, as well as considering the effects of soil disturbance (smear zone) and drain resistance in the analysis, this study presents a stochastic cost optimization of ground improvement with PVD and surcharge preloading. Direct Monte Carlo (MC) simulation and importance sampling (IS) technique is used in the stochastic analysis by limiting the sampled random soil parameters within the range from a minimum to maximum value while considering their statistical distribution. The method has been verified in a case study of PVD improved ground with preloading, in which average results of the stochastic analysis showed a good agreement with field monitoring data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1706-1711
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• 1989

Unit processes for the fabrication of HEMT(high electron mobility transistor)was studied and the optimum conditions of them were applied to the fabrifcation of a discrete HEMT device. The HEMT with a nominal gate-source spacing of 3.6\ulcorner and a gate length of 2.8\ulcorner showed a transconductance of 46.1mS/mm and a threshold voltage of -0.29V. A source-drain voltage of 2.0V for a saturation current of 35mA/mm was achieved.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.65-70
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• 2013

A 0.18-${\mu}m$ 3.3 V grounded-gate NMOS (GGNMOS) I/O cell array for timing controller (TCON) application is proposed for improving electrical overstress (EOS) robustness. The improved cell array consists of 20 GGNMOS, 4 inserted well taps, 2 end-well taps and shallow trench isolation (STI). Technology computer-aided design (TCAD) simulation results show that the inserted well taps and extended drain contact gate spacing (DCGS) is effective in preventing EOS failure, e.g. local burnout. Thermodynamic models for device simulation enable us to obtain lattice temperature distributions inside the cells. The peak value of the maximum lattice temperature in the improved GGNMOS cell array is lower than that in a conventional GGNMOS cell array. The inserted well taps also improve the uniformity of turn-on of GGNMOS cells. EOS test results show the validity of the simulation results on improvement of EOS robustness of the new GGNMOS I/O cell array.

• Asian Journal of Turfgrass Science
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• v.17 no.4
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• pp.155-163
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• 2003

This study was conducted to find out suitable rootzone profile, irrigation system, and turfgrass species for roof turf garden. Treatments of profile with soil amendment were Mixture I: Perlite(PL)60％＋Vermiculite(VC)20％＋Peatmoss(PM)20％, Mixture II: PL60％＋VC 10％＋PM20％＋Sand(SD)10％, Mixture III: PL60％＋VC20％＋PM20％ and Mixture IV: PL60％＋VC10％＋PM20％＋SD10％＋Styrofoam 5cm as a drain layer. To test trickle irrigation for roof garden, intervals of main pipe spacing(50cm, 100cm) and drop hole distance(15, 20, 30, 50 and 100cm)were treated, To select most suitable turfgrass species or mixture, Bermudagrass 'Konwoo', Zoysiagrass 'Konhee' and cool-season grass(Kentucky Bluegrass 80％ ＋ Perennial Ryegrass 20％, Tall Fescue 30％ ＋ KB50％ ＋ PR 20％)were tested. In particle size analysis, the soil amendments Perlite and vermiculite showed very even distribution, however, peatmoss contained mostly coarse particles with fiber over $\Phi$ 4.75mm. Under field moisture condition, vermiculite and peatmoss showed 350％ water holding capacity, on the other hand, sand or Perlite showed 115％ and 166％, respectively. Total weight of soil profile was 139.2kg/$m^2$ with Styrofoam drain layer without sand, which showed most lightest among treatments. Turf quality also resulted positve with Styrofoam drain layer installation. On trickle irrigation system, the proper interval of main drain pipe spacing and drop hole distance were 50cm and 50cm, respectively, In irrigation frequency, once per a day for 15 minute irrigation with 2 1/hr showed the best results on turf quality. Among turfgrass species or cool season grass mixture, warm season turfgrass fine leaf type zoysiagrass 'Konhee' and Bermudagrass 'Konwoo' showed very acceptable result on all over the treatments of rootzone and irrigation system. To apply cool season grasses for the roof garden, advanced researches may be needed to establish the proper soil amendment, rootzone profile, and irrigation system, Application of Bermudagrass 'Konwoo' for roof turf garden also needs successive tests to overcome winter injuries.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.1-8
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• 2005

In this paper, we analyzed the DC and RF characteristics of $0.1\;{\mu}m$ metamorphic high electron mobility transistor (MHEMT) using the ISE-TCAD simulation tool. we also analyzed the effects or the scaling on vertical and lateral dimensions such as a gate length, source-drain spacing, and channel thickness. We discussed the degradation of extrinsic transconductance $g_{m,max}$ in the MHEMTs adopting the gate length $(L_g)$ of $sub-0.1\;{\mu}m$. We suggested the model describing the effects on the vertical and lateral parameter scaling.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.675-678
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• 2003

We studied the electrical characteristics of pentacene-based organic field-effect transistors (FETs) with polymethyl methacrylate (PMMA) or poly-4-vinylphenol (PVP) as the gate insulator. PMMA or PVP was spin-coated on the indium tin oxide glass substrate that serves as gate electrodes. The source-drain current dependence on the gate voltage shows the FET characteristics of the hole accumulation type. The transistor with PVP shows a higher field-effect mobility of 0.14 $cm^{2}/Vs$ compared with 0.045 $cm^{2}/Vs$ for the transistor with PMMA. The atomic force microscope (AFM) images indicate that the grain size of the pentacene on PVP is larger than that on PMMA. X-ray diffraction (XRD) patterns for the pentacene deposited on PVP exhibit a new Bragg reflection at $19.5{\pm}0.2^{\circ}$, which is absent for the pentacene on PMMA. This peak corresponds to the flat-lying pentacene molecules with less intermolecular spacing.

• Journal of the Korean Geotechnical Society
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• v.16 no.2
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• pp.61-70
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• 2000

When clay foundations of embankments are treated with vertical drain, essentially, the strain occurs to vertical direction but the water flow is radial. The initial horizontal permeability and its variation with the vertical compression are key parameters for the choice of the type of drains, their spacing, and affect to the cost of the project. In this study, CRS consolidation test is performed to investigate the anisotropic characteristics of decomposed mudstone soil and direct permeability test is performed on the same specimens. The results of testing show that Ch is larger than Cv. specially, the Cv - $\sigma$v relationship for a soil sample is viewed from three different curve segments corresponding to overconsolidated, transition and normally consolidated states. The anisotropic ratio, rk(kh/kv) is 2.19. Coefficient of permeability in normally consolidated state is related to its void ratio and permeability parameter n. C can be determined from a linear plot of log[k(1+e)] versus log e. The slope, n, of graphs is the same, whereas the vertical intercept, log C, seems to vary somewhat for anisotropic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.911-915
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• 2004

In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.