• Journal of the Korean Institute of Rural Architecture
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• v.1 no.2
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• pp.83-96
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• 1999

The Buildings and facilities of municipal Councils of fundamental autonomous organization in various regions were made on the basis of its experiences in 1950s but lacked constructional sophistication and failed to comprehend their functions, resulting in several repairs and renovations after the dedications of the buildings. They also undermined the efficiencies of the worn and was a big drain on the budget of municipal councils. Furthermore, especially after the integration of rural and urban areas. Municipal councils in urban areas couldn't accommodate the increased staffs. Thereby, They used the established councils in the cities and countries and repaired and renovated other buildings of which were permitted as offices, decreasing the eligibility of the buildings for municipal councils. The poor constructional working conditions triggered new constructions of the buildings reserved only for municipal councils. The study finds out find out about the work of municipal councils and analyzes how the municipal council buildings are used as substitutional spaces, directing which way they should go in mapping out spaces. Resultantly, It becomes basic materials in constructing municipal buildings.

• Journal of Environmental Science International
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• v.14 no.11
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• pp.1027-1033
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• 2005

The treatment of styrene vapor was carried out using the biofilter packed with loess/polyurethane composite during continuous operation of 74 days. The microorganisms were adapted within 2-3 days under the experimental conditions of inlet concentration and empty bed contact time (EBCT). At 200 sec of EBCT, the removal efficiency of styrene was 100\% with 200 ppmv of inlet concentration, while $92\%$ with 400 ppmv of inlet concentration. The biofilter showed the stable removal efficiencies of over $74\%$ under the EBCT range from 300 to 75 sec at the 150 ppmv of inlet styrene concentration. The maximum capacity of styrene removal for the biofilter packed with loess/polyurethane was $29g/m^3/hr$. During continuous operation of 74 days, pH of the drain water changed slightly and the pressure drop through the biofilter column was below $45\;mmH_2O/m$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.11
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• pp.87-91
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• 2004

The continuing development of the information technology industry and wireless networking has increased the use of mobile device, which provides both portability and mobility. As follows, demands for extended services within the wireless Internet are increasing rapidly. Because it still in its initial stages of development, the wireless Internet presents continuing problems in security and limitations in the content of services. Furthermore, most mobile equipment utilizes the touch pad input method. This input method is inconvenient when a user needs to input a long sentence. This has led to the more convenient development of image selection by using a pen mouse. In order to provide security under these conditions, a HASH code may be used to transmit an array of information and input values, created by the image input at the early stages. Thus, authentication and key exchange are completed securely. Messages are encoded and transmitted, preventing both information drain by insiders and interference from outside.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.910-917
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• 2009

We have designed a new structures of Junction Field Effect Transistor(JFET) using SILVACO simulation to improve electrical properties and process reliability. The device structure and process conditions of Si control JFET(Si JFET) were determined to set cut off voltage and drain current(at Vg=0 V) to -0.46 V and $300\;{\mu}A$, respectively. Among many design parameters influencing the performance of the device, the drive-in time of p-type gate is presented most predominant effects. Therefore we newly designed SiGe JFET, in which SiGe layers were placed above and underneath of Si-channel. The presence of SiGe layer could lessen Boron into the n-type Si channel, so that it would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer could be explained in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1764-1770
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• 2020

The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.

• KIEAE Journal
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• v.9 no.2
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• pp.99-106
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• 2009

The noise in apartment buildings are major factor that determine the quality of indoor noise environment. Particularly, the noise from children's running footsteps and plumbing noise have caused the residents who live in decrepit apartment houses to uncomfortable environment. And as time go by, sound performance are getting worse according to the aging of the facilities. So this study deals with the plans to improve the sound performance of decrepit apartment house. To compare the noise reduction, we measured the heavy-weight impact sound level and plumbing noise level before and after changes the measurement conditions. As the results of measurements, the heavy-weight impact sound level were decreased when stiffness reinforcement were installed on slab. Especially the sound level were decreased 2.1-7.6dB in 50-80Hz of low frequency range. Instead of PVC pipe system, cast iron pipe and triple elbow drain pipe systems were installed. Noise level were decreased 15dB(A) in 250Hz. Noise level of pipe system's on the slab is less than under slab one. On the contrary water saving stool showed increasing the noise level.

• Journal of IKEEE
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• v.14 no.3
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• pp.219-223
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• 2010

In this study, we fabricated the HgSe nanoparticle-based thin film transistors (TFTs) of back gate structure with PVA gate dielectric. The fabricated TFTs show the improved electrical characteristics in the mobility of $16\;cm^2$/Vs and the on/off ratio of $10^4$ after annealing process at $100^{\circ}C$ for 5 min. AFM images demonstrate that the decrease in surface roughness according to annealing process leads to the improvement of electrical characteristics. The change in drain current caused from the conditions of flexible substrate is investigated under 0.6% strain.

• ETRI Journal
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• v.39 no.2
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• pp.292-299
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• 2017

We propose pulse-mode dynamic $R_on$ measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic $R_on$ of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from $ 0.1{\mu}s$ to 100 ms, the dynamic $R_on$ decreased from $160\Omega$ to $2\Omega$. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.

• Fashion & Textile Research Journal
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• v.5 no.5
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• pp.539-544
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• 2003

The purpose of this study is to research source of soil which is available for non-detergent course, and to develop optimum non-detergent course of washing machine for water soluble soil. The water soluble soil such as grape juice, soy bean paste and soy sauce were easily removed from the fabric but the oil soluble soils such as sesame oil and steak sauce were insurfficiently removed in washing solution without detergent. In the absence of detergent, amount of residual soils increased linearly with increasing number of soiling and washing. To search optimum conditions of washing for non-detergent course, the effect of temperature, washing time and washing method on detergency of soil in non-detergent washing solution was examined. The optimum washing temperature and washing time for non-detergent course were about $40^{\circ}C$, and 7 minutes, respectively. And in the non-detergent washing solution, midterm drain-resupply of water during washing process was good for removal of water soluble soil.