• Title/Summary/Keyword: double-well potential

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AN APPROACH TO SOLUTION OF THE SCHRÖDINGER EQUATION USING FOURIER-TYPE FUNCTIONALS

  • Chang, Seung Jun;Choi, Jae Gil;Chung, Hyun Soo
    • Journal of the Korean Mathematical Society
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    • v.50 no.2
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    • pp.259-274
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    • 2013
  • In this paper, we consider the Fourier-type functionals on Wiener space. We then establish the analytic Feynman integrals involving the ${\diamond}$-convolutions. Further, we give an approach to solution of the Schr$\ddot{o}$dinger equation via Fourier-type functionals. Finally, we use this approach to obtain solutions of the Schr$\ddot{o}$dinger equations for harmonic oscillator and double-well potential. The Schr$\ddot{o}$dinger equations for harmonic oscillator and double-well potential are meaningful subjects in quantum mechanics.

Electric double layers interactions under condition of variable dielectric permittivity

  • Payam, Amir Farrokh;Fathipour, Morteza
    • Interaction and multiscale mechanics
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    • v.3 no.2
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    • pp.157-171
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    • 2010
  • In this paper, a theoretical method has been developed for the electric double layer interaction under condition of the variable dielectric permittivity of water. Using Poisson-Boltzmann equation (PBE), for one plate and two plates having similar or dissimilar constant charge or constant potential, we have investigated the electric double layer potential, its gradient and the disjoining pressure as well as the effect of variation of dielectric permittivity on these parameters. It has been assumed that plates are separated by a specific distance and contain a liquid solution in between. It is shown that reduction of the dielectric permittivity near the interfaces results in compression of electric double layers and affects the potential and its gradient which leads to a decreased electrostatic repulsion. In addition, it is shown that variation of dielectric permittivity in the case of higher electrolyte concentration, leads to a greater change in potential distribution between two plates.

Potential Profiles and Capacitances of an Ideally Polarizable Electrode/Hard Sphere Electrolyte System

  • Kim, Sang-Youl;Vedam, K.
    • Bulletin of the Korean Chemical Society
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    • v.11 no.6
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    • pp.487-493
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    • 1990
  • A complete potential profile of an electrical double layer is calculated from a distribution function of charged particles based upon a model where the effect of a charged electrode and the finite size of ion are explicitly included. Electrons which are distributed on the electrode surface are assumed not to penetrate the electrode/electrolyte boundary. Formation of the constant density regions and their effects on potential and the electrical double layer capacitances are studied in great detail. The distribution of surface electrons as well as the constant density regions are found to be essential in characterizing the electrical double layer. The introduction of the ion size into the prior electrical double layer model of an ideally polarizable electrode/point charged electrolyte system, shows a great improvement in its characteristics mostly at negative potential region.

A study on the fabrication of double rectangular spiral thin film inductor (Double rectangular spiral thin film inductor의 제조에 관한 연구)

  • 김충식;신동훈;정종한;남승의;김형준
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.461-464
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    • 1999
  • Planar type thin film inductors have a potential for the application of miniaturized DC-DC converters. For those high current applications, the magnetic film with high current capability is required. The current capability of magnetic films is mainly determined from high saturation magnetization (4$\piM_s$) as well as large anisotropy field $(H_k)$. We fabricated a double rectangular spiral thin film inductor which consist of magnetic layer, coil and insulator. Highest inductance values as well as best frequency characteristics can be obtained from 5 MHz and quality factor exhibit about 7.

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Analysis of the Output Characteristics of IGZO TFT with Double Gate Structure (더블 게이트 구조 적용에 따른 IGZO TFT 특성 분석)

  • Kim, Ji Won;Park, Kee Chan;Kim, Yong Sang;Jeon, Jae Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.4
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    • pp.281-285
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    • 2020
  • Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

  • Zhu, Zhaomin;Yan, Dawei;Xu, Guoqing;Peng, Yong;Gu, Xiaofeng
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.3
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    • pp.237-244
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    • 2013
  • A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.

A Study on the Zeta Potential Measurement and the Stability Analysis of Nano Fluids using a Particle Image Processing System (입자 영상 처리 시스템을 이용한 콜로이드 입자의 제타포텐셜 측정 및 나노유체 분산 특성 연구)

  • Lee, J.K.;Kim, S.C.;Kim, H.J.;Lee, C.G.;Ju, C.H.;Lee, L.C.
    • Journal of ILASS-Korea
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    • v.8 no.1
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    • pp.16-22
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    • 2003
  • Zeta potential measurements of colloid particles suspended in a liquid are performed by a Zeta Meter developed. There are many applications of colloid stability in spray technology, paints, wastewater treatment, and pharmaceuticalse. Zeta potentials of charged particles are obtained by measuring the electrophoretic velocities of the particles using video enhanced microscopy and image analysis program. The values of zeta potential of polystyrene latex(PSL), $silica(SiO_2)$M, polyvinylidence difluoride(PVDF), silicon nitride, and alumina particles in deionized (DI) water were measured to be -40.5, -31.9, -25.2, -15.1 and -10.1mV, respectively. The particles having high zeta potential less than -20 mV are stable in DI water, because the double layers of them have strong repulsive forces mutually, and the particles having low zeta potential over -20mV are unstable due to Van Der Waals forces. Silica(>20nm), PSL, aluminum and PVDF particles were found to be stable that would remain separate and well disperse, while silicon nitride and alumina particles were found to be unstable that would gradually agglomerate in DI water.

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Current Characteristics at p-GaP Semiconductor Interfaces (p형 GaP 반도체 계면의 전류 특성)

  • 김은익;천장호
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.9
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    • pp.1369-1374
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    • 1989
  • Electrical characteristics at the p-GaP semiconductor/CsNO3 electrolyte interfaces were investigated. It is found that such interfacial phenomena are well analyzed by semiconductor-semiconductor pn junction diode models and image charge effects of semiconductor-vacuum interfaces. The formation processes of electrical double layers and their potential variations are verified using cyclic voltammetric methods. The interfacial current are influenced by Cs+ ion coverage onto the semiconductor electrode surface and structure of electrical double layer.

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Electrokinetic flow and electroviscous effect in a charged slit-like microfluidic channel with nonlinear Poisson-Boltzmann field

  • Chun, Myung-Suk;Kwak, Hyun-Wook
    • Korea-Australia Rheology Journal
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    • v.15 no.2
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    • pp.83-90
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    • 2003
  • In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.

Connection between a Small-Scale Emerging Island and Double Arc Loops Producing a M6.5 Flare in Active Region 12371

  • Kang, Jihye;Inoue, Satoshi;Moon, Yong-Jae;Magara, Tetsuya;Kusano, Kanya
    • The Bulletin of The Korean Astronomical Society
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    • v.42 no.2
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    • pp.81.3-81.3
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    • 2017
  • In this paper, we report a small-scale emerging island and double arc loops, which are associated with a M6.5 flare, in Active Region 12371. We investigate the spatial and temporal changes of both photospheric magnetic fields using SDO/HMI data and coronal magnetic structures obtained from nonliner force-free field (NLFFF) extrapolation. From the vector magnetograms, we find a small-scale emerging island near the main polarityy inversion line about three hours before the flare. The island has a strong shear angle, which is determined by difference between transverse component of observed field and potential field, of around 90 degrees. Furthermore, the NLFFF well reproduces a sigmoidal structure seen in SDO/AIA 94, which is consistent with the double arc loops configuration suggested by Ishiguro and Kusano (2017) who introduced a magnetic configuration showing the double arc instability. The observed emerging island is located among the double arc loops, which is also supproted by their model. Finally, there was an eruption (M6.5 flare) associated with the loops. We discuss a possible role of the double arc instability for the eruption.

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