• Korean Journal of Materials Research
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• v.20 no.5
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.301-304
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• 2002

We investigated the structural and electrical properties of Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$(BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/$SiO_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/$O_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 m (RMS at $500^{\circ}C$, Ar:6 scrim, $O_2$:6 sccm). We have found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.153-156
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their dielectric properties were investigated with variation of composition ratio, doped ZrO$_2$ (0.5, 1.0, 1.5, 2.0, 3.0 wt%) and sintered at 145$0^{\circ}C$. The dielectric constant and loss of the x=0.10 specimen applied field were 19.86 and 0.302 % at 0 V/cm, and 25.937 and 0.339 % at 300 V/cm, respectively. Dielectric constant were increased with increased applied field and decreased with increased frequency, and dielectric loss were within 0.1% at applied 800 MHz, respectively. all specimens showed fairly good applied field. Although, dielectric constant and loss of all specimen showed to tend of nearly the same. same.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.477-483
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• 1987

Cr2O3 doped Pb(Zr0.525 Ti0.475)O3 piezoelectric ceramics were prepared from reagent grade oxide mixture, PbO, ZrO2, TiO2 and Cr2O3. Piezoelectric and aging properties of specimens were measured for various additions of Cr2O3. Generally, it has been known that aging rate decreased with Cr2O3 addition by stabilizing the domain wall. But hysteresis loops showed that the domain destabilization was occurred at high electric field (larger than 10KV/cm). In smaller additions of Cr2O3 (0-0.2mol%), aging rate increased and microcracks were created with increasing poling filed due to increasing internal stress. In larger additions of Cr2O3(0.4∼0.6mol%), aging rate decreased with increasing poling field.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.471-478
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• 2011

Investigations of crystal structure and phase transition of $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics doped with A-site substitution impurity (La, Nd) or B-site substitution impurity (Sb, Nb) at 2 mol% concentration were carried out. X-ray diffraction patterns of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics have been measured at pressures up to ~5 GPa with diamond anvil cell and synchrotron radiation. The patterns were obtained at room temperature using methanol-ethanol mixture as pressure-transmitting media. In order to refine the crystal structure, Rietveld analysis has been performed. The structures of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics are tetragonal in space group P4mm at ambient pressure and are transformed into a cubic phase in space group Pm$\bar{3}$m as the pressure increases. In this study, when A-site substitution donor $La^{3+}$ or $Nd^{3+}$ ion was added to $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics, the phase transition phenomena showed up at the pressure of 2.5~4.6 GPa, but when B-site substitution donor $Nb^{5+}$ or $Sb^{5+}$ ion was added to it, the phase transition appeared at relatively lower pressure of 1.7~2.6 GPa.

• Bulletin of the Korean Chemical Society
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• v.29 no.6
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• pp.1217-1223
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• 2008

A series of Zr,S co-doped $TiO_2$ were synthesized by a modified sol-gel method and characterized by various spectroscopic and analytical techniques. The presence of sulfur caused a red-shift in the absorption band of $TiO_2$. Co-doping of sulfur and zirconium (Zr-$TiO_2$-S) improves the surface properties such as surface area, pore volume, and pore diameter and also enhances the thermal stability of the anatase phase. The Zr-$TiO_2$-S systems are very effective visible-light active catalysts for the degradation of toluene. All reactions follow pseudo firstorder kinetics with the decomposition rate reaching as high as 77% within 4 h. The catalytic activity decreases in the following order: Zr-$TiO_2$-S >$TiO_2$-S >Zr-$TiO_2$>$TiO_2$$\approx$ P-25, demonstrating the synergic effect of codoping with zirconium and sulfur. When the comparison is made within the series of Zr-$TiO_2$-S, the catalytic performance is found to be a function of Zr-contents as follows: 3 wt % Zr-TiO2-S >0.5 wt % Zr-$TiO_2$-S> 5 wt % Zr-$TiO_2$-S >1 wt % Zr-$TiO_2$-S. Higher calcination temperature decreases the reactivity of Zr-$TiO_2$-S.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.915-920
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• 1997

Tetragonal ZrO2 polycrystal (TZP), consisted of 90.24 mol% ZrO2-5.31 mol% Y2O3-4.45 mol% Nb2O5, were prepared using hot-press and mechanical properties and high-temperature degradation were investigated. The specimen, hot-pressed for 1 h at 140$0^{\circ}C$ in Ar atmosphere, exhibited flexural strength of 1010 MPa and fracture toughness of 7.5 MPam1/2 and experienced no low-temperature degradation below 40$0^{\circ}C$. However, as aged for 100h at temperatures higher than 40$0^{\circ}C$, TZP was suffered by high-temperature degradation due to an extensive cavitation caused by the oxidation of carbon. XPS observation revealed that the carbon incorporated in TZPs during hot-pressing exists as either an ether-type CO or a carbonyl-type C=O. Despite of the high-temperature degradation of t-ZrO2 co-doped with Y2O3 and Nb2O5, its flexural strength and fracture toughness were superior to those of the commercial 3 mol% Y2O3-TZP hot-pressed under the identical condition as determined before and after the aging treatments.

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.19-24
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• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.420-426
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• 2002

$ZrO_2$, $Y_2O_3$-doped $ZrO_2$ and CaO-doped $ZrO_2$ powders were prepared by hydrothermal crystallizing spherical $ZrO_2$ gel which had been synthesized by thermal hydrolysis reaction. After the hydrothermal crystallization process, the formed crystallized powders sustained its original spherical shape and had the mean particle size of $0.4{\mu}m$. The particles were composed of about 10nm sized primary particles. The agglomeration strength between the primary particles appears very weak considering that the spherical particles were broken into the primary particles during the pressing process. The particle shape, size, phase fraction and dopant content were analyzed and crystallization mechanism of spherical gel was discussed.