• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.7-19
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• 1981

Anodization method is utilized in order to measure diffusion profiles of boron and arsenic in silicon. The solution used for silicon anodization is Ethylene glycol +KNO3(0.04N), The thickness of silicon which is consumed by a single 200V anodization is 460$\pm$40A regardless of wafer type. The profiles of boron and arsenic in silicon after predeposition process are investigated. The diffusion coefficients of both dopants depending on impurity concentration are extrated from these profiles. The base pull-in effect has been observed in prototype npn transistors with arsenic doped emitter.

• Proceedings of the KSME Conference
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• 2002.08a
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• pp.353-356
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• 2002

Planar laser induced fluorescence(PLIF) has been widely used to obtain two dimensional fuel distribution. Preliminary investigation was performed to measure quantitative air excess ratio distribution in an engine fueled with LPG. It is known that fluorescence signal from acetone as a fluorescent tracer is less sensitive to oxygen quenching than other dopants. Acetone was excited by KrF excimer laser (248nm) and its fluorescence image was acquired by ICCD camera with a cut-of filter to suppress Mie scattering from the laser light. For the purpose of quantifying PLIF signal, an image processing method including the correction of laser sheet beam profile was suggested. Raw images were divided by each intensity of laser energy and profile of laser sheet beam. Inhomogeneous fluorescence images scaled with the reference data, which was taken by a calibration process, were converted to air excess ratio distribution. This investigation showed instantaneous quantitative measurement of planar air excess ratio distribution for gaseous fuel.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.166-170
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• 2001

Dopants implanted in silicon substrate affect the reaction between cobalt and silicon substrate. Phosphorous, unlike boron and arsenic, suppressing the reaction between cobalt and silicon induces CoSi formation during a low temperature thermal treatment instead of CoSi₂formation. The CoSi layer should move to the silicon substrate to fill the vacant volume that is generated in the silicon substrate due to the silicon out-diffusion into the cobalt/CoSi interface. The movement of CoSi at gate sidewall spacer region is suppressed by a cohesion between gate oxide and CoSi layers, resulting in a void formation at the gate sidewall spacer edge.

• Korean Journal of Optics and Photonics
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• v.5 no.2
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• pp.304-310
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• 1994

The use of thermally expanded core (TEe) fibers fabricated by thermal diffusion of dopants such as $GeO_{2}$ in hybrid fiber components has an advantage of eliminating lenses for collimation and focusing. An electric furnace is fabricated to heat the fibers locally for the core expansion. We observed an expansion of the mode size at $1.3\mu\textrm{m}$ wavelength by 27% after treating a section of single mode optical fiber at $1250^{\circ}C$ for 10 hours. hours.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.615-619
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• 2003

Temperature and frequency dependence of dielectric and electrical properties was investigated in cerium and manganese doped Sr$\_$0.6/Ba$\_$0.4/Nb$_2$O$\_$6/(60SBN) ceramic system. Structural deformation of 60SBN by dopants did not appeared. 1350$^{\circ}C$-10 h sintered specimen had higher densification than 1250$^{\circ}C$-10 h sintered one, to which dielectric properties are related. That the feature of dielectric maxima peaks was typical Diffusive Phase Transition (DPT), it was explained by "random-field Ising model". Even though 60SBN has large dielectric loss at high frequency above 100 ㎑, it is desirable for optical applications because of low dielectric loss at low frequency. From Arrhenius plot of temperature, the activation energy was calculated to 0.45-0.49 eV.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.711-714
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• 2002

The Ce, Mn: $LiTaO_3$ crystals were grown by Czochralski method in congruent ${\varphi}$3＂ $LiTaO_3$ single crystal growing conditions. Concentrations of Ce and Mn in melt were respectively 0.1 mole%. As-grown crystals were red, transparent and the grown crystals were tested with oxidation/reduction treatment for clor and other properties. Influence of Ce and Mn dopants on $LiTaO_3$ crystal properties was discussed. And the nonlinear optical properties of the Ce, Mn: $LiTaO_3$ crystal are being studied.

• Journal of the Korean Ceramic Society
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• v.25 no.3
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• pp.293-299
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• 1988

The effects of flux KCl and dopants, La2O3 and Ta2O5, on the PTCR characteristics in molten salt synthesized BaTiO3 have been studied. The resistivity of BaTiO3 at room temperature decreases with increasing amount of dopant La2O3 up to 0.2 atom%, and then increases with La2O3 content. In case of dopant Ta2O5, it increases with increasing amount ofthe dopant. These results could be explained by observation of the microstructure and defect equation. From the results of complex impedance-frequency characteristics, the grain resistances are almost same but the resistances at the grain boundary are quite different.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.1
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• pp.33-39
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• 1974

A method of dopant implantation by low temperatme diffusion with ion collisions as well as the mechanism of its apparatus is to be introduced. The implantillg function is mainly based on the Principle of radiation enhanced diffusion due to the collisions of low energy Particles and the preheating of the substrate in an environment of rarefied air plasma. The implanted results of various dopants into semicondctors by the Implanter are also presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.476-480
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• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.