• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.35-38
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• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• 한국재료학회지
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• 제24권12호
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• pp.715-719
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• 2014

(PDDA/$SiO_2$) thin films that consisted of positively charged poly (diallyldimethylammonium chloride) (PDDA) and negatively charged $SiO_2$ nanoparticles were fabricated on a glass substrate by an applying voltage layer-by-layer (LBL) self-assembly method. In this study, the microstructure and optical properties of the (PDDA/$SiO_2$) thin films coated on glass substrate were measured as a function of the applied voltage on the Pt electrodes. When 1.0 V was applied to a Pt electrode in a PDDA and $SiO_2$ solution, the thickness of the $(PDDA/SiO_2)_{10}$ thin film increased from 79 nm to 166 nm. The surface roughness also increased from 15.21 nm to 33.25 nm because the adsorption volume of the oppositely charged PDDA and $SiO_2$ solution increased. Especially, when the voltage was applied to the Pt electrode in the $SiO_2$ solution, the thickness increase of the (PDDA/$SiO_2$) thin film was larger than that obtained when using the PDDA solution. The refractive index of the fabricated (PDDA/$SiO_2$) thin film was ca. n = 1.31~1.32. The transmittance of the glass substrate coated by (PDDA/$SiO_2$)6 thin film with a thickness of 106 nm increased from ca. 91.37 to 95.74% in the visible range.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.637-640
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• 2006

DuPont Teijin Films (DTF) have developed engineered substrates specifically for the flexible electronics market. $Teonex^{(R)}Q65$ is a biaxially oriented crystalline polyester with a tailored surface and it is emerging as a competitive material for the base substrate in OLED displays and active matrix backplanes. Given the dimensional reproducibility requirements in the display applications, uncontrolled moisture absorption during the processing cycle could potentially be far more significant than the inherent shrinkage of the base substrate. Understanding these effects and optimising the processing steps involved in device manufacture will be critical to achieving the ultimate performance that can be achieved with the base substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.185-189
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• 2002

Flexible displays such as plastic based LCDs and organic light-emitting diodes for mobile communication devices have been researched and developed at KETI in KOREA since 1997. The Plastic film substrate has so poor thermal tolerance and non-rigidness that the fabrication of active devices and panel assembly have to perform at low temperature and pressure. In addition, high thermal expansion of the substrate is also a serious problem for reliable metallic film deposition. In this paper, we investigated particularly on the fundamental characteristics of various plastic substrates and then, suggested novel methods that improve the fabrication processes of plastic LCD panel. In order to maintain stable substrate surface and uniform cell gap during panel assembly, we utilized newly-invented iii and vacuum chuck. Electro-optical characteristics of fabricated plastic LCD are better than or equivalent to those of typical glass based LCDs though it is thinner, lighter-weight and more robust.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.523-525
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• 2002

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.746-749
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• 2002

Aluminum oxide thin films were grown on a poly ethylene naphthalate (PEN) substrate at the temperature of 100$^{\circ}C$ using atomic layer deposition method. The film showed very flat morphology and good adhesion to the substrate. The visible spectrum showed higher transmittance in the range from 400 nm to 800 nm than that of PEN. The water vapor transmission value measured with MOCON for 230nm oxide-deposited PEN was 0.62g/$m^2$/day @ 38$^{\circ}C$, while that of PEN substrate was 1.4g/$m^2$/day @ 38$^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.1-5
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• 2012

Al doped ZnO (AZO) thin film was deposited by using Facing Target Sputtering (FTS) system. This work examined the properties of AZO thin film as a function of the substrate temperature. The sputtering targets were 4 inch diameter disks of AZO (ZnO : $Al_2O_3$ = 98 : 2 wt.% ). The properties of electrical, structural and optical were investigated by 4-point probe, Hall effect measurement, x-ray diffractometer (XRD), field-emitting scanning electron microscopy (FE-SEM), and UV/VIS spectrometer. The lowest resistivity of films was $5.67{\times}10^{-4}{\Omega}.cm$ and the average optical transmittance of the films was above 85% in the visible range.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.45-48
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• 2011

In this paper, vacancy clustering formation and diffusion of germanium substrate was studied. The analysis method was adopted Monte Carlo method. At temperatures higher than melting point, fewer clusters formed, but there was less variation in the number of clusters than at lower temperatures, as the time increased. Equilibrium diffusivities in the clustering region were $10^2$ lower than those of free vacancies in the initial stage of kinetic lattice Monte Carlo simulations. They were expressed according to three temperature regimes: at temperatures above 1,100 K, at temperatures of 1,100-900 K, and at temperatures below 900 K. The effective mean migration energy, 1.1 eV, closely coincided with that of the 1.0-1.2 eV in experiments.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.57-60
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• 2009

Transparent electrode ZnO:Al(AZO)films were deposited on a PES (polyethersulfone) polymer substrate for thin film solar cells applications. A PES substrate with a thickness of 0.2mm and transmittance > 90% in the visible range was used because it is light weight and can deform easily. AZO thin films were prepared at a fixed DC power, $PO_2\;=\;P(O_2)/[P(O_2)\;+\;P(Ar)]$, and various substrate temperatures. The properties of AZO thin films were examined by X-ray diffraction, UV/VIS spectroscopy, four-point probe, Hall measurements, and field emission scanning electron microscopy. The lowest resistivity of all the films was $4.493\;{\times}\;10^{-4}\;[\Omega-cm]$ and the transmittance was > 80% in the visible range.