• Korean Journal of Materials Research
• /
• v.34 no.7
• /
• pp.355-362
• /
• 2024

AR (alkali resistant)-glass fibers were developed to provide better alkali resistance, but there is currently no research on AR-glass fiber manufacturing. In this study, we fabricated glass fiber from AR-glass using a continuous spinning process with 40 wt% refused coal ore. To confirm the melting properties of the marble glass, raw material was put into a (platinum) Pt crucible and melted at temperatures up to 1,650 ℃ for 2 h and then annealed. To confirm the transparent clear marble glass, visible transmittance was measured and the fiber spinning condition was investigated by high temperature viscosity measurement. A change in diameter was observed according to winding speed in the range of 100 to 700 rpm. We also checked the change in diameter as a function of fiberizing temperature in the range of 1,240 to 1,340 ℃. As winding speed increased at constant temperature, fiber diameter tended to decrease. However, at fiberizing temperature at constant winding speed, fiber diameter tended to increase. The properties of the prepared spinning fibers were confirmed by optical microscope, tensile strength, modulus and alkali-resistance tests.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.9
• /
• pp.589-593
• /
• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.12
• /
• pp.820-824
• /
• 2014

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

• Journal of Broadcast Engineering
• /
• v.24 no.3
• /
• pp.452-462
• /
• 2019

A digital hologram, which is one of the next generation visual systems, can be generated and displayed in various formats, and a digital hologram is created in accordance with the characteristics of the system for display. Diffraction efficiency can be used as a measure of the characteristics of digital holograms generaged under various conditions in various display environments. In this paper, diffraction efficiency for computer-generated hologram (CGH) under various conditions was measured. This paper discusses the generation conditions that should be considered in hologram display. We compared each condition by measuring the intensity of the first order diffraction pattern of the fringe generated under the Fresnel condition for the phase hologram. Through this paper, we showed the tend about characteristics of the diffraction efficiency according to object point, reconstruction distance, laser and SLM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.7
• /
• pp.439-445
• /
• 2015

We established the emulsion method using membrane filter with precise control of LC droplet distribution in PDLC. PDLC cells with various LC droplet size distributions such as single droplet sizes of $1.0{\mu}m$, $1.9{\mu}m$ and $3.5{\mu}m$, the mixture of two different LC droplet sizes and the mixture of three different LC droplet sizes were fabricated and the electro-optical properties of the emulsion type PDLC cells with various droplet size distribution were investigated. In the appropriate droplet size range, the PDLCs with the single droplet sizes distributions have good electro optical properties than those with the mixture of three different LC droplet sizes. In addition, the PDLC cells with the mixture of two different LC droplet sizes have the better electro optical properties than those with single droplet sizes distribution. The PDLC cell with dual droplet size distribution of $1.0+1.9{\mu}m$ shown the best electro optical properties than the PDLC cells with other size distributions. This method enabled us to find the proper LC droplet size distribution for achieving both high transmittance and contrast ratio.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.3 s.168
• /
• pp.115-122
• /
• 2005

As the digital TV markets rapidly growing, many manufacturers introduce large size flat screen TV units. There are two different display types available to large size models which are plasma and TFT-LCD. Since both are constructed with thin large panels that are mostly fragile to even moderate mechanical shock inputs. Some large size panels are severely resonated by the acoustic sound generated TV which deteriorates video quality. Recognizing the potential problems of large displays, accurate measurement of the panels is to be an essential task for the reliable design. Measurement of mechanical properties of a thin large crystallized panel such as TFT-LCD display with traditional material testing equipments is challenging. Since TFT-LCDs are constructed with combination of brittle glass panels, polymer sheets, and liquid crystal, their properties are not only anisotropic but also usually non-linear. Accurate measurement of the properties often requires very expensive facilities. Especially when the size of the test sample is as large as 40-inch or wider, direct measurement cost is prohibitive. Even worse, machining of the large TFT-LCD to make a smaller size specimen that could be fit into a material tester is not possible because of liquid crystal leakage. A new method fer the measurement of elastic modulus of large TFT-LCD panel is presented in this article. The suggested method provides a simple, economic, and user-friendly way fer measuring the elastic modulus of large panels with considerable level of accuracy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.7
• /
• pp.532-536
• /
• 2011

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at $150^{\circ}C$ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, $SiH_4$, $NH_3$, $N_2$, and $H_2$, to produce Si-N and N-H bond in a-SiNx:H film growth. $SiH_4$, $NH_3$, and $N_2$ flow rate fixed at 100, 10, and 10 sccm, $H_2$ flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we makes MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current $10^{-7}\;A/cm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.5
• /
• pp.307-311
• /
• 2014

Because of a waveguiding effect and total internal reflection caused by a difference in refractive indices, only 20% of generated light is emitted to the air and the rest is trapped or absorbed in the device. An improvement of outcoupled efficiency of organic light-emitting diodes was studied using a microlens array. Mold of microlens array was fabricated by using photo-lithography with the AZ9260 photoresist, and the microlens array was formed onto the glass substrate using the UV curing agent named ZPU13-440. Device structure consists of microlens/glass/ITO/TPD/$Alq_3$/LiF/Al. It was found that there is an improvement of external quantum efficiency by about 20% at the same current density for the device with the microlens array compared to that of the reference one. Simulated outcoupled efficiency shows the improvement by about 20% for the device with the microlens array compared to that of the reference one. These results are consistent with the experimental ones.

• Journal of Information Display
• /
• v.9 no.4
• /
• pp.21-29
• /
• 2008

We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.6
• /
• pp.451-455
• /
• 2012

To compare an electrical and optical characteristics of indium tin oxide (ITO) and carbon nanotube (CNT) electrode on flexible and reflective display, we fabricate two charged particle-type display panels under the same panel condition of which the width of ribs is 10 ${\mu}m$, the cell size is $300{\mu}m{\times}300{\mu}m$, the q/m value of the white particles is -4.3 ${\mu}C/g$ and that for the black is +1.3 ${\mu}C/g$, and the cell gap is 75 ${\mu}m$, 125 ${\mu}m$, and 175 ${\mu}m$. We use plastic substrates coated with ITO and CNT electrode. To evaluate optical property, we measure a response time of particles using a laser and a photodiode. Threshold and driving voltages of CNT electrode according to the sheet resistance of 300, 600, 1,000 (ohm/sq) are compared with ITO electrode of 10 (ohm/sq). A response time of the CNT panel is similar to that of ITO panel, but the threshold and driving voltages of CNT panel are higher than that of ITO panel, inducing a large bombardment of the particles and shortening the lifetime of the panel. High difference of a threshold and a driving voltage of CNT panel will induce an particle clumping, resulting degradation of the panel. A bending radius of the fabricated CNT panel is 18 ${\mu}m$.