• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.108-111
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• 2004

An efficiency and brightness of the Organic Light-emitting Diodes(OLEDs) by insertion of the novel layer between a singlet emitter and an electron transporting layer without doping processes, has been improved. The novel layers named as the K-M1 and K-M2 layers have shown the excellent improvement in the carrier balance and recombination efficiency. New devices using the K-M1 and K-M2 layers have shown a high efficiencies of over 15cd/A and 61m/W$(at\;20mA/cm^2)$, and brightness of over $16,000cd/m^2(at\;100mA/cm^2)$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.189-192
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• 2004

To improvement life-time of the organic light emitting diodes(OLEDs). We investigate the inorganic composite film based on MgO and $SiO_2$ to protect from the moisture and oxygen. The inorganic composite films are added the base materials to the co-operate materials using the mixed process and it is deposited on plastic substrate by e-beam evaporator. In order to analyze as kinds of inorganic materials, Water Vapor method of Transmission Rate (WVTR) and Oxygen Transmission Rate (OTR) are measured by Permatran equipment(MOCON Corp.). For comparison. an MgD- and $SiO_2$-based composite film has lower values of WVTR and OTR than inorganic composite/compound films of ones. The results obtained here shows that this film is suitable for passivation layer to extend the life-time of OLEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.101-105
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• 2016

The basic characteristics of glass are highly fragile and brittle consequences the ultimate purpose of glass manufacturing is to make a transparent glass with complex shape. In order to solve this problem, mechanical properties of glass can be increased by crystallization of its amorphous glass. However, glass-ceramics has become opaque through crystallization process due to the distracted interface of glass by precipitated particles. This study has been investigated thermal processing conditions of LAS transparent glass-ceramic by using DTA (differential thermal analysis), in order to control size of precipitated particle and then fabricate transparent glass-ceramic. DTA indicated that crystallization peak area was declined with increased nucleation temperature. Subsequently, we have been established optimum temperature for crystallization depending on the nucleation temperature. The transmission and thermal expansion were measured after crystallization, and the size of precipitated particle was identified in range of 20~100 nm by FE-SEM. In addition, by setting the optimized crystallization condition, with high transmission and low thermal expansion glass was synthesized through this experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.199-203
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• 2017

$ZrO_2/PSS$ thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated $ZrO_2/PSS$ thin films were measured as a function of the number of $(ZrO_2/PSS)n$. As the number of $(ZrO_2/PSS)n$ increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The $ZrO_2$ thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated $(ZrO_2/PSS)_{15}$ thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a $(ZrO_2/PSS)_{15}$ thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.402-403
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• 2007

High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and a spacer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) as the blue emission and bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate $((acppy)_2Ir(acac))$ as the red emission. This spacer effectively prevented a triple-triple energy transfer between the two phosphorescent emissive layers with blue and red emission that was showed a improved lifetime. The white device showed Commission Internationale De L'Eclairage $(CIE_{x,y})$ coordinates of (0.33, 0.42) at $22400\;cd/m^2$, a maximum luminance of $27300\;cd/m^2\;at\;0.388\;mA/cm^2$, and a maximum luminous efficiency of 26.9 cd/A.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.3.1-3.1
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• 2009

Normal sintering process of producing porous ceramics is not to sinter perfectly, i.e., stop sintering in middle-process. Our porous ceramic materials are a product of complete sintering. For example if one want to make a porous carborundum, raw carborundum powder is sintered at either lower temperatures than normal sintering temperature or shorter sintering periods than normal sintering time to obtain incompletely sintered materials, i.e., porous carborundum. This implies normally sintered porous ceramic materials can mot be used in high vacuum conditions due to dust coming out from uncompleted sintering. We could produce completely sintered porous ceramic materials. For example, we can produce porous carborundum material by using carborundum particles bonded by glassy material. The properties of this material are similar to carborundum. We could make quasi-zero thermal expansion porous material by using carborundum and particles of negative thermal expansion materials bonded by the glassy material. We apply to sinter them also by microwave to sinter quickly. We also use HIP process to introduce closed pores. We could sinter them in large size to produce $2.5m{\times}2.5m$ ceramic plate to use as a precision plate for flat display industries. This flat ceramic plate is the world largest artificial ceramic plate. Precision plates are basic importance to any advanced electronic industries. The produced precision plate has lower density, lower thermal expansivity, higher or similar damping properties added extra properties such as vacuum vise, air sliding capacity. These plates are highly recommended to use in flat display industries. We could produce also cylindrical porous ceramics materials, which can applied to precision roller for polymer film precision motion for also electronic industries.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.127-130
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• 2009

High luminance 3D built-in PDP panel was developed with newly adopted fast-decaying phosphor. Luminance of 3D PDP was increased about 40% by reducing the particle size of RGB phosphors and using $Y_3(Al,Ga)_5O_{12}:Ce^{3+}$ phosphor. Decay time of developed 3D PDP was 5.2ms/4.9ms for Red/Green color.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.51-56
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• 2022

Recently, the demand for semiconductors is expanded to various industries, and the use of high-quality and high-performance chips is increasing. With the trend, the diameter magnification and high integration of the semiconductor wafers are mandatory. As a result, there is a growing demand for the productivity improvement and the surface precision. There have been many studies on the stabilization of the wafer manufacturing processes in order to satisfy those specifications. Many complaints have been appealed by the wafer buyers that there are many unacceptable wafers with surface defects and foreign material adhesion which are caused by the vibrations during transportation. This study intends to derive the material improvement of the packing box of the wafers to suppress the vibrations of the box, and eventually to reduce the surface defects and the foreign material adhesion. The result shows that optimal material can substantially decrease the vibration of the packing box.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.330-334
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• 2018

With the development of the Internet of Things, the use of flexible displays has become widespread. In particular, the use of curved, bendable, and rollable displays is increasing. Flexible display production processes include various important components such as lamination material, flexible substrates, and adhesives. Among them, improvement of the lamination process comprises a large proportion of efforts for further development. In this paper, we attempt to improve the transmittance of the display substrate by performing a bubble removal process after adhesion. The transmittance of the glass substrate with the bubble removal process was 5~12% higher than that of the substrate without the bubble removal process. The fill-strength after the bubble removal process was improved by 21.4%, and the shear-strength was improved by 43.9%.