• Archives of Plastic Surgery
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• 제37권3호
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• pp.227-232
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• 2010

Purpose: Continuous irrigation method is an important step in managing wound infection. V.A.C. devices have been used in intractable wounds for reducing discharge, improving local blood flow, and promoting healthy granulation tissue. We expect synergistic effects of reduced infection and more satisfactory, accelerated wound healing when using both methods simultaneously. This study evaluated continuous irrigation combined with V.A.C. appliance for treatment of infected chronic wounds. Methods: We reviewed data from 17 patients with infected intractable chronic wounds. V.A.C. device (Group A) was used in 9 patients, and V.A.C. with antibiotics irrigation (Group B) was used in 8 patients. We placed Mepitel$^{(R)}$ on the surface of wound and placed an irrigation and aspiration tube on each side. A sponge was placed on the Mepitel$^{(R)}$ and covered with film dressing. The wound was irrigated continuously with mixed antibiotics solution at the speed of 200 cc/hr and aspirated through the wall suction at the pressure of -125 mmHg. V.A.C. applied time, wound culture and wound size were compared between the two groups. Results: No complication were seen in two groups. Compared with Group A, in the Group B, V.A.C. applied time was shortened from 32.7 days to 25.6 days and showed efficacy in the reduction rate of wound size. No statistical differences were shown in bacterial reversion. Conclusion: V.A.C. appliance with continuous irrigation is an effective new method of managing infected chronic wounds and useful to reduce treatment duration and decrease wound size. Moreover it could be applied more widely to infected wound.

• 한국안전학회지
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• 제32권4호
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• pp.46-52
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• 2017

Sediment exchange in river has been affected by artificial changes such as dredging and abnormal climate changes like intense rainfall. Over last decades in Korea, there were many constructions, restoration or rehabilitation in rivers. Therefore, deposition and erosion become more actively occurred than before, which may threaten the river safety such as flood defense. For safety's sake, the dredging of river bed, which is considered as the most typical measure, has been increased to extend hydraulic conveyance compared with previous conditions. However, since it might change the sediment mechanism, there would be another risk at which unexpected side effects such as headward erosion could be occurred. Particularly, sedimentation at abrupt expansion region is able to lead to hydraulic characteristics like water elevation in the upstream region in the beginning of dredging, which, however, has been barely studied in this field. Therefore in this study, the relationship between sediment mechanism at dredging section and hydraulic characteristics in upstream region were presented through numerical simulations in the idealized abruptly widen channel using Delft3D. The ideal channel of 2,000 m length with each side angle of 45 degrees at abruptly widen expansion region was employed to consider the sediment angle of repose. The sensitivity analysis was performed on the dimensionless factors consisted of upstream and downstream depths($h_u$, $h_d$), width($w_u$, $w_d$), water level(H), flow rate(Q) and discharge of sediment($Q_s$). And the sedimentation amount at dredging and the upstream hydraulic characteristics were investigated through that analysis. It showed that $h_d/h_u$, $H/h_u$ and $w_d/w_u$ were more influential in sequence of effect on sedimentation amount, while $h_d/h_u$, $w_d/w_u$ and $H/h_u$ on upstream region. It means that $h_d/h_u$ was revealed as the most significant factors on sedimentation, also it would most highly affect the rising of water level upstream.

• 대한환경공학회지
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• 제27권3호
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• pp.330-336
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• 2005

본 연구에서는 촉매공정의 질소산화물 제거 성능을 향상시키기 위하여 배기가스에 오존을 주입하였다. 배기가스에 오존을 주입하면 배기가스에 포함되어 있는 NO의 일부가 $NO_2$로 빠르게 산화되며, NO와 $NO_2$ 혼합물은 촉매반응기에서 $N_2$로 환원된다. 오존의 발생을 위해 유전체 장벽 방전 반응기가 사용되었고 촉매로는 상용 $V_2O_5-WO_3/TiO_2$ 촉매가 사용되었다. 질소산화물의 환원제는 암모니아였다. 촉매반응기 전단의 $NO_2$ 함량은 오존 주입량에 의해 변화될 수 있었으며, $NO_2$ 함량 변화가 촉매의 질소산화물 저감성능에 미치는 영향에 대해 살펴보았다. $NO_2$ 함량이 촉매반응기의 성능에 미치는 영향은 다양한 조건에서 수행되었는데, 주요 변수로 선정한 것은 반응온도, 초기 $NO_x$ 농도, 암모니아 농도, 그리고 배기가스 유량이었다. 오존주입에 의한 $NO_2$ 함량 증가는 촉매공정의 질소산화물 제거 성능을 크게 향상시킬 수 있었으며, 이러한 성능 향상 효과는 반응온도가 낮을수록 두드러졌다. 본 연구의 오존 주입 방법은 기존 촉매 공정의 개선에 크게 유용할 것으로 판단된다.

• 한국수자원학회논문집
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• 제51권3호
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• pp.263-272
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• 2018

수공구조물 설계시 실측 유량의 자료 부족으로 홍수량의 빈도해석 결과보다는 강우자료를 수집하여 강우-유출 관계에 따라 산정된 설계강우량을 이용하여 특정 빈도에 해당하는 설계 홍수량을 사용하는 것이 일반적이다. 과거에는 첨두유량 산정을 위하여 합리식과 같은 경험식을 이용하였으나 지속기간이 장기화됨에 따라 실제 사상과는 다른 유출양상이 나타나게 되므로 확률강우량 시간분포의 정확성이 중요하게 되었다. 현재 실무에서는 설계강우량의 시간분포 방법으로 Huff의 4분위 방법 중 3분위를 사용하고 있으며 분위별 곡선에 대한 회귀식은 지속기간 전반에 걸쳐 정확도가 높은 이유로 6차식을 적용하고 있다. 그러나 통계 모델링에서는 간결함의 원리에 따라 회귀식이 간결할 필요가 있으며, 통계적 유의수준에 기초하여 회귀계수를 결정할 필요가 있다. 따라서 본 연구에서는 기상청 관할 69개 강우관측지점을 대상으로 설계강우량의 시간분포 방법으로 사용되고 있는 Huff 4분위 방법의 시간분포 회귀식에 대한 유의성 검정을 실시하였다. 기상청 관할 69개 강우관측지점의 Huff 4분위 방법의 시간분포 회귀식의 유의성 검정결과 대부분의 지점에서 4차식까지 회귀계수가 유의한 것으로 나타나 통계학적으로 Huff의 4분위 방법의 시간분포 회귀식은 4차까지만 고려하여도 무방한 것으로 분석되었다.

• 대한한의학회지
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• 제18권2호
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• pp.223-244
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• 1997

Clinical observation was done on 290 cases of patients who were diagnosed as CVA with brain CT, TCD, MRI scan and clinical observation. They were hospitalized in the oriental medical hospital of Kyung-Won University from 1st January to 31st December in 1996. 1. The cases were classified into the following kinds : cerebral infarction, cerebral hemorrhage, and transient ischemic attack. The most case of them was the cerebr진 infarction. 2. There is no significant difference in the frequency of strokes in male and female. And the frequency of strokes was highest in the aged over 50. 3. In cerebral infarction the most frequent lesion was the territory of middle cerebral artery, and in cerebral hemorrhage the most frequent lesion was the basal ganglia. 4. The most ordinary preceding disease was hypertension, and the next was diabetes. 5. The rate of recurrence was high in cerebral infarction. 6. The frequency of strokes seems to have no relation to the season. 7. The cerebral infarction occurred usually in resting and sleeping, and the cerebral hemorrhage in acting. 8. The course of entering hospital, most patients visited this hospital as soon as CVA occurred. And the half of patient visited this hospital within 2 days after CVA attack. 9. In the cases of patients who were unconscious at the admission, the prognosis was worse than that of the alert patients. 10. The common symptoms were motor disability and verbal disturbance. 11. The average duration of hospitalization was 27.4 days, and in case of cerebral hemorrhage the duration was prolonged. 12. The average time to start physical therapy was 13.3rd day after stroke in cerebral infarction and it was 19.9th day after stroke in cerebral hemorrhage. 13. The common complications were urinary tract infection, pneumonia, myocardial infarction and so on. 15. At the time of entering hospital, in most cases the blood pressure was high, but blood pressure was well controlled at the time of discharge. 16. Generally reported, hypercholesterolemia and hypertriglyceridemia are usually found in cerebral infarction. But in this study, they were found more frequently in cerebral hemorrhage than in infarction. 17, In the most cases, western and oriental medical treatments were given simultaneously. 18. In acute or subacute stage, the methods of smoothening the flow of KI(順氣), dispelling phlegm(祛痰), clearing away heat(淸熱) or purgation(瀉下) were frequently used. And in recovering stage, the methods of replenishing KI(補氣), tonifying the blood(補血) or tranquilization(安神) were frequently used.

• KSBB Journal
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• 제23권1호
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• pp.83-89
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• 2008

음식물쓰레기를 처리하기 위한 3단계 메탄발효시스템으로부터 유출되는 음식물 발효 폐액은 고농도 유기성 폐수이다. 유기성 폐수는 고도처리 시스템에 의해 방류기준에 적합하게 처리되어져야만 한다. 본 연구에서는 유기성 폐수를 처리하기 위해 고효율 $UV/TiO_{2}$ 광촉매 산화공정의 최적 운전 조건을 조사하였다. 첫 번째 공정에서 폐수에 응집제인 $FeCl_{3}$를 전처리 하였으며, 응집을 위한 최적 pH와 응집제의 농도는 각각 pH 4와 2000 mg/L이었다. 이 공정을 통하여 최대 52.6%의 COD가 제거되었다. 두 번째는 $UV/TiO_{2}$ 광촉매 산화공정으로, 최적 운전 조건은 중심파장이 254 nm, 폐수 온도 및 pH가 각각 $40^{\circ}C$와 pH 8, 반응기 주입 공기량이 40 L/min인 것으로 조사되었다. 응집제를 이용한 전처리 공정과 광촉매 산화공정을 병합하여 최적조건에서 폐수를 처리할 경우 T-N과 COD의 제거율은 각각 69.7%와 70.9% 이었다.

• 대한환경공학회지
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• 제30권12호
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• pp.1268-1272
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• 2008

부분산화가 적용된 저온플라즈마는 메탄으로부터 합성가스를 생산하는 기술이다. 저온 플라즈마 기술은 수증기 개질, 이산화탄소 개질을 이용한 개질기 보다 소형화와 시동특성이 우수한 장점을 가지고 있으며 다양한 분야에 적용이 가능하다. 본 연구에서는 GlidArc 방전을 이용한 저온플라즈마 개질기를 제안하였다. 개질 특성을 파악하고자 변수별 연구로서 가스 조성비율(O$_2$/CH$_4$), 수증기 주입량, 니켈과 철 촉매의 비교 및 이산화탄소 주입량에 대해 실험을 수행하였다. 최적의 수소 생산 조건은 O$_2$/C비가 0.64, 주입 가스유량은 14.2 L/min, 촉매의 반응기의 내부 온도는 672$^{\circ}C$, 주입 가스 량에 대한 수증기 유량 비율은 0.8 그리고 유입전력이 1.1 kJ/L일 때, 41.1%로 최대 수소 농도를 나타냈다. 그리고 이때 메탄의 전환율, 수소 수율 그리고 개질기 열효율은 각각 46.5%, 89.1%, 37.5%를 나타냈다.

• Journal of Biosystems Engineering
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• 제22권4호
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• pp.469-478
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• 1997

This study was conducted to develop an automatic nutrient-solution mixing system for small-scale sewers. The nutrient-solution mixing system consisted of a low-cost and precise metering device and data acquisition ＆ control system with a personal computer. and, the metering device was composed of three parts those were supply pumps, metering cylinders and venturi tube. The system controlled electric conductivity(EC) and pH of nutrient-solution based on the time-based feedback control method with the information about temperature, EC, and pH of the nutrient-solution. The performance of the nutrient-solution mixing system was evaluated through the control of EC and pH while compared with those of commercial system. Also an experimental cultivation of tomato was conducted to verify and to improve the developed system. Results of this study were as follows. 1. The correlation coefficient of meteing device between the flow rate and operating time was 0.9999, and the linear reuession equation computed was y=21.759x, where y is the discharge($g$) and x is the operating time(s). 2. Calculated errors for the developed metering device and two commercial pump were $\pm$0.3% $\pm$2.45% and $\pm$1.38 % FS error respectively. 3. An automatic nutrient-solution mixing system based on a low-cost and precise metering device was developed. 4. The full scale errors of the developed system in controlling EC and pH at 23$\pm$1$^{\circ}C$ were $\pm$0.05mS/cm and $\pm$0.2, respectively 5. When using the commercial system, the controlled values of EC and pH of the 500 $\ell$ of water were 1.29 mS/cm and 6.1 pH for the setting points of 1.4 mS/cm and 6.0 pH respectively at 23$pm1^{\circ}C$. 6. The developed nutrient-solution control system showed $\pm$0.05 ms/cm of deviation from the setting EC value over the experimental cultivation period. 7. The deviation from the average values of Ca and Mg mass content in the several nutrient-solution were 0.5% and 1.8% respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.