• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.218-223
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• 2013

In this study, the reflectivity characteristics of Ag nano-coating grown by electroless plating were investigated in order to use as the reflecting plate of BLU (Back Light Unit) in the LCD (Liquid Crystal Display) or LED (Light Emitting Diode) display equipment. The microstructure of Ag nano-coating was polycrystalline nano-structure that consisted of Ag nano-crystals to be reduced and precipitated, and the size of reduced nano-crystals increased as the thickness of nano-coating increased. The reflectivity of Ag nano-coating in the visible light decreased as the thickness of nano-coating increased and the reduction of reflectivity was more severe in the short wavelength region of visible light. The decrease of reflectivity was closely related to the size of Ag nano-crystal and was thought to be due to the larger surface roughness of larger nano-coating thickness. Therefore, the finer Ag nano-crystals and thinner nano-coating thickness could be favorable for the higher reflectivity of Ag nano-coating grown by electroless plating.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3205-3214
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• 1996

In this paper, the microstrip phased array antennas with coupling-slots for the base station of mobile communication is proposed and anlyzed with accurate analysis method which is based on both reciprocity principle and full-wave analysis. The basis functions used for the numerical analysis are determined depending upon the accuracy, convergence properties of the solution, and the computation time. The patch uses 3 EB mode and the slot uses IPWS mode. The designed phased array antenna has 8 slot-coupled microstrip patch array elements and the beam scanning capability is obtained by using the 4-bit PIN-diode phase shifters as switching devices which are consisted of the loaded line phase shifters for 30.deg. and 60.deg. and the reflection type phase shifters for 90.deg. and 180.deg. repectively. The 4-bits phase shifters which aremade by connecting each phase shifter have about 2.deg.-3.deg. phase errors and their insertion loss are about 3dB for each phase state. The fabricated 8-element phased array antenna with 4-bits phase shifters provides 12.deg.-14.deg. beamwidths depending on the scanning angle and is capable of scanning its beam to .+-.45.deg. with 9.deg. intervals, and the gain 12dBi. The overall results show that the slot-coupled phased array antenna has great advantages of wideband, high gain and reduced spurious radiation. Also, the antenna can be made small and thin. Furthermore, the scanning property of this antenna allows for its application in several areas, such as mobile communication system and PCS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.338-338
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• 2010

지난 20여년 동안 반도체 레이저 다이오드는 주로 CD (DVD) 픽업용 (파장: 640 nm 이하) 및 통신용 (파장 1550 nm) 광원 분야에서 집중적으로 개발되어 왔다. 그러나 기술의 개발과 더불어 파장조절이 비교적 자유로워지고 광출력이 증대 되면서 기존의 레이저 고유의 영역까지 그 응용분야기 확대되고 있고, 이에 따라 고출력 반도체 레이저 다이오드의 시장 규모도 꾸준히 증가되고 있는 상황이다. 고출력 반도체 레이저 다이오드는 발진 파장 및 광출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. MBE(Molecular Beam Epitaxy)로 성장된 InAlAs 에피층 (epi-layer)을 사용하여 고출력을 갚는 레이저 다이오드를 제작함에 있어서, 에피층은 결함 (defect)이 없는 우수한 단결정이 요구되지만, 실제 결정 성장 과정에서는 성장온도와 Al 조성비 등의 성장 조건의 변화에 따라 전기적 광학적 특성 및 신뢰성에 큰 영향을 받는 것으로 보고되고 있다. 이에 본 연구에서는 DLTS (Deep Level Transient Spectroscopy) 방법을 이용하여 InAlAs 양자점 에피층의 깊은 준위 거동을 조사하였다. DLTS 측정 결과, 0.3eV 부근의 point defect과 0.57 ~ 0.70 eV 영역의 trap이 조사되었으며, 이는 갈륨 (Ga) vacancy와 산소 원자의 복합체에 기인한 결함으로 분석된다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.74-79
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• 2010

We have designed a millimeter-wave passive imaging sensor with multi-horn antenna array. Six horn array antenna is suggested that it is integrated into one housing, and this antenna is effectively configurated m space to assemble with LNA of WR-10 structure. Antenna is designed to have the peak gain of 17.5dBi at the center frequency of 94GHz, and the return loss of less than -25dB in W-band, and the small aperture size of $6mm{\times}9mm$ for antenna configuration with high resolution. LNA is designed to have total gain of more than 55dB and noise figure of less than 5dB for good sensitivity. We made a detector for DC output translation of millimeter-wave signal with zero bias Schottky diode. It is shown that good sensitivity of more than 500mV/mW.

• Current Optics and Photonics
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• v.3 no.6
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• pp.590-596
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• 2019

To improve the color gamut of a liquid-crystal display (LCD), we propose a bandpass filter that is added to the backlight unit to optimize the backlight spectrum. The bandpass filter can only transmit red, green and blue light in the visible range, while reflecting the unwanted light. We study the optical properties of the bandpass filter using the transfer-matrix method, and the effect of the bandpass filter on the color gamuts of LCDs is also investigated. When a bandpass filter based on a 5-layer configuration comprising low and high refractive indices ((HL)²H) is used in phosphor-converted white-light-emitting diode (pc-WLED), K₂SiF₆:Mn⁴⁺ (KSF-LED), and quantum-dot (QD) backlights, the color gamuts of the LCDs improve from 72% to 95.3% of NTSC, from 92% to 106.7% of NTSC, and from 104.3% to 112.2% of NTSC respectively. When the incident angle of light increases to 30°, the color gamuts of LCDs with pc-WLED and KSF-LED backlights decrease by 2.9% and 1% respectively. For the QD backlight, the color gamut almost does not change. When the (HL)²H structure is coated on the diffusion film, the color gamut can be improved to 92.6% of NTSC (pc-WLED), 105.6% of NTSC (KSF-LED), and 111.9% of NTSC (QD). The diffusion film has no obvious effect on the color gamut. The results have an important potential application in wide-color-gamut LCDs.

• Korean Journal of Optics and Photonics
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• v.18 no.4
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• pp.235-240
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• 2007

A ceramic stem based TO package incorporating a coplanar waveguide feed-line has been proposed allowing for 10 Gbps grade data transmission. The frequency response of a cylindrical feed-line fer a conventional metal based TO package was first analyzed, and compared with that of the CPW feed-line used for a ceramic based package such as a butterfly package. For the case where a DFB LD chip is packaged to an LD module, the measured 3 dB frequency bandwidths for the conventional and proposed packages were 3.5 GHz and 7.8 GHz respectively, which agree well with the theoretical results obtained from the modeling based on the small signal equivalent circuits. Consequently, we proposed a novel ceramic based TO package with a CPW feed-line in ceramic material as a stem to improve the frequency characteristics of the conventional one. And, its performance was theoretically observed to confirm that the proposed package provides even wider frequency bandwidth compared to the conventional one.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.170-176
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• 2014

Effective glass frit compositions enabled to absorb laser energy, and to seal a commercial dye-sensitized solar-cell-panel substrate were developed by using $V_2O_5$-based glasses with various amounts of $TeO_2$ substitution. The latter was intended to increase the lifetime of the solar cells. Substitution of $V_2O_5$ by $TeO_2$ provided a strong network structure for the glasses via the formation of tetrahedral pyramids in the glass, and changed the various glass properties, such as glass transition temperature ($T_g$), dilatometric softening point ($T_d$), crystallization temperature, coefficient of thermal expansion (CTE), and glass flowage without any detrimental effect on the laser absorption property of the glasses. The thermal expansion mismatch (${\Delta}{\alpha}$) between the glass frit and the substrate could be controlled within less than ${\pm}5%$ by addition of 10 wt% of ${\beta}$-eucryptite. An 810 nm diode laser was used for the sealing test. The laser sealing test revealed that the VZBT20 glass frit with 10 wt% ${\beta}$-eucryptite was successfully sealed the substrates without interfacial cracks and pores. The optimum sealing conditions were provided by a beam size of 3 mm, laser power of 40 watt, scan speed of 300 mm/s, and 200 irradiation cycles.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.9
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• pp.12-20
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• 2013

In this paper, a co-planar waveguide(CPW) fed zeroth-order resonant(ZOR) antenna with frequency reconfigurable radiating structures is fabricated and measured. The unit cell of proposed antenna consists of a series metal-insulator-metal(MIM) capacitor and two shunt line inductors which are shorted through the via. The proposed antenna is designed based on a composite right/left-handed(CRLH) transmission line with two unit cells and it has open ended structure in order to radiate electromagnetic energy mainly on the shunt arm. In order to reduce the antenna size and to exhibit a frequency reconfigurable ability using diode switches four straight strips bent by 90 degrees are used as shunt inductors. The total size of fabricated antenna is $0.22{\lambda}_0{\times}0.16{\lambda}_0$ at zeroth-order resonant(ZOR) frequency. The measured maximum gain and bandwidth (VSWR ${\leq}2$) are 3.1 dBi and 56MHz at ZOR frequency of 2.97 GHz, respectively. This type of antenna can be applied to a frequency reconfigurable antenna system with triple bands.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.12
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• pp.1646-1654
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• 2002

A two-phase closed thermosyphon was one of the most effective devices in the removing heat because of its simple structure, thermal diode characteristics, wide operating temperature range and so on. In this study, a two-phase closed thermosyphon(working fluid PFC(C6F14), container copper(inner grooved surface)) was fabricated with a reservoir which can change the fill charge ratio. The experiments were performed in the range of 50~600W heat flow rate and 10~70% fill charge ratio. The results were compared with some correlations that were presented by Rohsenow and Immura et al. in the evaporator, by Nusselt, Gross and Uehara et al. in the condenser and by Cohen and Bayley, Wallis, Kutateladze and Faghri et al. in heat transfer limitation etc.. The heat transfer coefficient at the evaporator increased with the input power. However the effect of the fill charge ratio was nearly negligible. At the condenser, it showed an opposite trend to the evaporator and with increase of the fill charge ratio, showed some enhancement of heat transfer. The heat transport limitation was occurred by the dry-out limitation for small fill charge ratio(10%) and presented about 100W. For the case of large fill charge ratio(Ψ$\geq$40%), it was occurred by the flooding limitation at about 500W.