• Bulletin of the Korean Chemical Society
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• v.28 no.3
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• pp.443-446
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• 2007

The novel blue light emitting material, 9,10-bis(3',5'-diphenylphenyl)anthracene (BDA) was synthesized by Suzuki coupling reaction and characterized by the measurements of 1H NMR, 13C NMR and FT-IR. The new anthracene derivative, which contains anthracene as a main core unit and 3',5'-diphenylphenyl group derivative as wings, has high fluorescence yield, good thermal stability, and high glass transition temperature at 188 oC. With the newly non-doped blue emitting material in the multilayer device structure, it was possible to achieve the current efficiency of 3.0 cd/A. The EL spectrum of the ITO/CuPc/α-NPD/BDA/Alq3/LiF/Al device showed a maximum wavelength (λmax) at 440 nm. The emitting color of device showed the blue emission (x,y) = (0.18,0.19) at 10 mA/cm2 in CIE (Commission Internationale de l'Eclairage) chromaticity coordinates.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.585-593
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• 2015

In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.552-554
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• 1995

In long-haul high speed optical communications, the distance between a transmitter and a receiver depends on the amount of light coupled to a single mode optical fiber from the laser diode(LD) as well as the LD characteristic itself. And the transmitter module must have long lifetime. high reliability, and even simple structure. Such points have induced laser welding technique to be a first choice in opto-electronic module packaging because it can provide strong weld joint in a short time with very small coupling loss. In this paper, packaging considerations and characteristics for high speed LD modules are discussed. They include optical path design factors for larger aligning tolerance, and novel laser welding processes for component assembly. For low coupling loss after laser welding processes, the optical path for optimum coupling of a single mode optical fiber into the LD chip was designed with the GRIN lens system providing sufficiently large aligning tolerance both in the radial and axial directions. The measured sensitivity of the LD module was better than -33.7dBm(back to back) at a BER of $10^{-10}$ with a 2.5Gbps NRZ $2^{23}-1$ PRBS.

• Journal of Electrical Engineering and Technology
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• v.11 no.3
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• pp.644-652
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• 2016

This paper presents an improved single-stage ac-dc LED-drive flyback converter using the transformer-coupled lossless (TCL) snubber. The proposed converter is derived from the integration of a full-bridge diode rectifier and a conventional flyback converter with a simple TCL snubber. The TCL snubber circuit is composed of only two diodes, a capacitor, and a transformer-coupled auxiliary winding. The TCL snubber limits the surge voltage of the switch and regenerates the energy stored in the leakage inductance of the transformer. Also, the switch of the proposed converter is turned on at a minimum voltage using a formed resonant circuit. Thus, the proposed converter achieves high efficiency. The proposed converter utilizes only one general power factor correction (PFC) control IC as its controller and performs both PFC and output power regulation, simultaneously. Therefore, the proposed converter provides a simple structure and an economic implementation and achieves a high power factor without the need for any separate PFC circuit. In this paper, the operational principle of the proposed converter is explained in detail and the design guideline of the proposed converter is briefly shown. Experimental results for a 40-W prototype are shown to validate the performance of the proposed converter.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.1
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• pp.9-14
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• 2005

Mode missing of Fabry-Perot laser diodes has been modeled using the time domain laser model(TDLM). Fabry-Perot laser diodes that have structure of ripple in the waveguide of active layer or defects inside the active layer were simulated. For accurate simulation, the nonlinear effects were included such as spatial hole burning(SHB) and gain saturation. From the simulation results, it was founded that the defect inside the active layer in laser diodes has a strong influence on mode missing rather than the waveguide ripple. The simulation results are confirmed with the fabricated Fabry-Perot laser diodes by measuring the longitudinal mode spectra as a function of temperature from $25[^{\circ}C]\;to\;85[^{\circ}C]$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.233-236
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• 2012

In this paper, the output characteristics of GaN-based LED considering blocking layer design variables are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering Al mole fraction of EBL, thickness of EBL, Al mole fraction of HBL and doping concentration of HBL are analyzed using ISE-TCAD.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• Journal of Power Electronics
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• v.18 no.3
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• pp.662-671
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• 2018

This paper presents a new structure for a step up dc-dc converter, which has several advantageous features. Firstly, the input dc source and the clamped capacitor are connected in series to transfer energy to the load through dual voltage multiplier cells. Therefore, the proposed converter can produce a very high voltage and a high conversion efficiency. Secondly, a double voltage clamped circuit is introduced to the primary side of the coupled inductor. The energy of the leakage inductance of the coupled inductor is recycled and the inrush current problem of the clamped circuits can be shared equally by two synchronous clamped capacitors. Therefore, the voltage spike of the switch tube is solved and the current stress of the diode is reduced. Thirdly, dual voltage multiplier cells can absorb the leakage inductance energy of the secondary side of the coupled inductor to obtain a higher efficiency. Fourthly, the active switch turns on at almost zero current and the reverse-recovery problem of the diodes is alleviated due to the leakage inductance, which further improves the conversion efficiency. The operating principles and a steady-state analysis of the continuous, discontinuous and boundary conduction modes are discussed in detail. Finally, the validity of this topology is confirmed by experimental results.

• Journal of Power Electronics
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• v.18 no.3
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• pp.802-816
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• 2018

A digital direct phase-shift control (DDPSC) method based on the phase-shifted full-bridge LLC (PSFB-LLC) converter is presented. This work combines DDPSC with the conventional linear control to obtain a hybrid control strategy that has the advantages of linear control and DDPSC control. The strategy is easy to realize and has good dynamic responses. The PSFB-LLC circuit structure is simple and works in the fixed frequency mode, which is beneficial to magnetic component design; it can realize the ZVS of the switch and the ZCS of the rectifier diode in a wide load range. In this work, the PSFB-LLC converter resonator is analyzed in detail, and the concrete realization scheme of the hybrid control strategy is provided by analyzing the state-plane trajectory and the time-domain model. Finally, a 3 kW prototype is developed, and the feasibility and effectiveness of the DDPSC controller and the hybrid strategy are verified by experimental results.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.63-70
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• 2010

We developed a new punching system that generates pinholes expressing texts or images on a plastic plate. The pin-holed plate is used as a new glamorous display board reflecting colorful lights from the light emitting diode (LED) installed on the edge side of the plate. The four degree-of-freedom punching system was designed to make same multiple holes on four plastic plates simultaneously. For this motion, we designed a structure for a simultaneous motion of the system. For even reflection of the lights from texts or images on the board and fast production of the pin-holed boards, fast motion including precise position control is very important. We also built a PC-based integrated control system including a GUI program to help users easily design luminous texts or images on the plastic plate. Also, we conducted a performance test of the system to verify the punching speed and position control of the pin holes on the plate.