• 한국항행학회논문지
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• 제13권3호
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• pp.399-405
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• 2009

본 논문은 메타 재질 구조를 바탕으로 한 가변 감쇠기와 그 응용에 대하여 기술 하였다. 손실이 존재하는 전송선로를 이용한 감쇠기 단위 셀은 CRLH(Composite Right/Left Handed) 전송선로와 다이오드 바이어스 전압에 따라서 내부 저항값의 변화에 따라서 손실을 제어할 수 있는 PIN다이오드로 구성되어 있다. 또한, 내부의 초기 삽입 손실을 줄이기 위해서 두 개의 PIN 다이오드를 병렬로 연결하였다. 이 감쇠기는 감쇠기 단위 셀 숫자를 증가시킴으로서 감쇠량을 증가시킬 수 있는 주기적 구조로 설계되었다. 단위 셀의 전기적 특성은 주파수 1.5 GHz ~ 2.5 GHz에서 10dB의 감쇠량과 최대 15o의 위상변화를 확인하였다. 이러한 특성의 감쇠기를 직렬로 연결하여 벡터 변조기에 응용하였다.

• Current Optics and Photonics
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• 제3권6호
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.

• 한국광학회지
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• 제11권6호
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• pp.411-417
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• 2000

SSC(Spot-size converter)가 집적된 1$1.3\mu{m}$ FP(Fabry-Perot)-LD(Laser Diode)에서 SSC 영역의 광도파로 구조가 단일모드광섬유와의 광결합 효율 및 정렬오차에 미치는 영향에 대해서 3차원 BPM(Beam Propagation Method)를 사용하여 알아보았다. 수지 taper의 경우 광결합효율을 향상하기 위해서는 taper 끝단에 충분한 길이의 직선도파로를 형성하는 것이 중요함을 알수 있었다. 또한 수평 taper 구조에서는 출사단 방향으로 도파로폭이 좁아지는 경우가 넓어지는 경우에 비해 유리하고, 수직 taper에 비해 완만한 도파로 경사가 필요함을 알 수있었다. 단일모드 광섬유와의 광결합 손실 및 정렬오차 허용도의 관점에서 좋은 특성을 주는 SSC 도파로 모양을 제시하였다.

• 한국재료학회지
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• 제28권3호
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• pp.159-165
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• 2018

In order to increase the efficiency of the sputtering method widely used in thin film fabrication, a dc sputtering apparatus which supplies both high frequency and magnetic field from the outside was fabricated, and cobalt thin film was fabricated using this apparatus. The apparatus can independently control the applied voltage, the target-substrate distance, and the target current, which are important parameters in the sputtering method, so that a stable glow discharge is obtained even at a low gas pressure of $10^{-3}$ Torr. The fabrication conditions using the sputtering method were mainly performed in $Ar+O_2$ mixed gas containing about 0.6 % oxygen gas under various Ar gas pressures of 1 to 30 mTorr. The microstructure of Co thin films deposited using this apparatus was examined by electron diffraction pattern and X-ray techniques. The magnetic properties were investigated by measuring the magnetization curves. The microstructure and magnetic properties of Co thin films depend on the discharge gas pressure. The thin film fabricated at high gas pressure showed a columnar structure containing a large amount of the third phase in the boundary region and the thin film formed at low gas pressure showed little or no columnar structure. The coercivity in the plane was slightly larger than that in the latter case.

• 센서학회지
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• 제18권6호
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• pp.475-484
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• 2009

In this paper, an analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure consists of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process. Measured results show that the output signal range is from 0.8 V to 3.8 V. This output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.70-70
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• 2010

Until recently. the study about bypass diode has been limited to theoretical study. but, in this paper, We study on the relationship between structure of PV module and Bypassing point by simulation software(Pspice). We expected the design on the PV module has an effect on bypassing point. So, we designated the two kind of experiment with PV modules. One of the experiment is on the relationship between the number of rows and Bypassing point on the PV modules, the other experiment is on the relationship between the number of groups(two columns) on the PV modules.(around 50Wp, 100Wp, 150Wp, 200WP) As the result, the more increase the number of rows, bypassing point is faster. And the more increase the number of groups in more than 3 groups, bypassing point is faster more than case of increasing the rows.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.411-412
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• 2008

The high performance 94 GHz MMIC(Monolithic Micro-wave Integrated Circuit) single balanced mixer was designed and fabricated, using MHEMT structure based diodes and a CPW(Coplanar Waveguide) tandem coupler. A novel single-balanced structure of diode mixer is proposed in this work, where a 3-dB tandem coupler with two section of parallel-coupled line. Implemented air-bridge crossover structures achieve wide frequency operation and the fabricated mixer exhibits excellent LO-RF isolation, larger than 30 dB, in the 5 GHz bandwidth of 91-96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO-RF isolation and conversion loss to those of the W-band mixers reported to date.

• 태양에너지
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• 제17권3호
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• pp.67-73
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• 1997

공기는 열전도 계수가 낮으므로 밀폐공간 내에서 적당한 형태를 형성하여 자연대류 열전달을 촉진 시키다면 태양열 집열기로서 건물 난방에 이용할 수 있고, 또 자연대류가 일어나지 않도록 유동을 억제 시킨다면 매우 훌륭한 단열재로 사용할 수 있다. 따라서, 본 연구에서는 건물벽 구조에 따라 내 외벽 사이에 단순 사각 밀폐공간을 형성하여 외벽의 가열부와 내벽의 방열부의 위치를 변화시켜 가며 수치해석을 수행하여 최대 난방 및 단열효과를 얻을 수 있는 새로운 대체 건물벽 개발에 관한 기초 설계 자료를 제시하고자 한다. 연구 결과 부력에 의한 driving force를 얻기 위해서는 방열부가 가열부보다 항상 위쪽에 위치하고 크기는 전체 높이의 1/2 이하일 때 열전달이 촉진됨을 알았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.531-532
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• 2005

We have used ITO/$Alq_3$/Al structure to study electrical conduction mechanism in $Alq_3$ based organic light emitting diode. Current-voltage characteristics were measured at room temperature by varying the thickness of $Alq_3$ layer from 60 to 400nm. We were able to prove that there are three different mechanism depending on the applied voltage; Ohmic, SCLC (space-charge-limited current). and TCLC (trap-charge -limited current) mechanism.